Inventor · disambiguated record
Toshiharu Yano
Also filed as: YANO TOSHIHARU
20 granted patents·14 pending applications·148 citations·filing 2008–2025
94Inventor score
Top patents by PatentIndex Score
34 records- 0196US11485824B2Thermosetting silicon-containing compound, composition for forming a silicon-containing film, and patterning processSHINETSU CHEMICAL CO·Filed 2020·Granted Nov 1, 2022·4 cites·8 claims
- 0296US8951917B2Composition for forming resist underlayer film and patterning process using the sameOGIHARA TSUTOMU·Filed 2012·Granted Feb 10, 2015·16 cites·24 claims
- 0395US8501386B2Silicon-containing film-forming composition, silicon-containing film-formed substrate, and patterning processOGIHARA TSUTOMU·Filed 2011·Granted Aug 6, 2013·14 cites·14 claims
- 0494US8835102B2Patterning process and composition for forming silicon-containing film usable thereforOGIHARA TSUTOMU·Filed 2012·Granted Sep 16, 2014·9 cites·15 claims
- 0593US8852844B2Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning processOGIHARA TSUTOMU·Filed 2009·Granted Oct 7, 2014·18 cites·24 claims
- 0693US8029974B2Metal oxide-containing film-forming composition, metal oxide-containing film-formed substrate, and patterning processSHINETSU CHEMICAL CO·Filed 2009·Granted Oct 4, 2011·19 cites·27 claims
- 0792US8026038B2Metal oxide-containing film-forming composition, metal oxide-containing film, metal oxide-containing film-bearing substrate, and patterning methodSHINETSU CHEMICAL CO·Filed 2008·Granted Sep 27, 2011·19 cites·20 claims
- 0890US7875417B2Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning methodSHINETSU CHEMICAL CO·Filed 2008·Granted Jan 25, 2011·12 cites·17 claims
- 0988US9372404B2Organic film composition, method for forming organic film and patterning process using this, and heat-decomposable polymerSHINETSU CHEMICAL CO·Filed 2013·Granted Jun 21, 2016·8 cites·27 claims
- 1088US8932953B2Composition for forming a silicon-containing resist underlayer film and patterning process using the sameOGIHARA TSUTOMU·Filed 2012·Granted Jan 13, 2015·6 cites·30 claims
- 1187US8652750B2Silicon-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning methodOGIHARA TSUTOMU·Filed 2008·Granted Feb 18, 2014·9 cites·15 claims
- 1284US9977330B2Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2015·Granted May 22, 2018·3 cites·24 claims
- 1383US8951711B2Patterning process and composition for forming silicon-containing film usable thereforSHINETSU CHEMICAL CO·Filed 2014·Granted Feb 10, 2015·3 cites·4 claims
- 1475US9261788B2Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2013·Granted Feb 16, 2016·2 cites·1 claims
- 1574US8859189B2Patterning processOGIHARA TSUTOMU·Filed 2012·Granted Oct 14, 2014·3 cites·17 claims
- 1668US8343711B2Patterning processSHINETSU CHEMICAL CO·Filed 2010·Granted Jan 1, 2013·2 cites·17 claims
- 1765US2025060670A1Method For Forming Resist Underlayer Film And Patterning ProcessSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1863US2025218768A1Composition For Forming Silicon-Containing Anti-Reflective Film And Patterning MethodSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 1962US8697330B2Composition for forming a silicon-containing antireflection film, substrate having the silicon-containing antireflection film from the composition and patterning process using the sameOGIHARA TSUTOMU·Filed 2010·Granted Apr 15, 2014·1 cites·10 claims
- 2061US2023152695A1Resist underlayer film material, patterning process, and method for forming resist underlayer filmSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 2161US2023168585A1Resist underlayer film material, patterning process, and method for forming resist underlayer filmSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 2259US2025036029A1Method For Forming Resist Underlayer Film And Patterning ProcessSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 2359US2025028246A1Composition For Forming Resist Underlayer Film, Patterning Process, And Method For Forming Resist Underlayer FilmSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 2459US2024087905A1Wafer Edge Protection Film Forming Method, Patterning Process, And Composition For Forming Wafer Edge Protection FilmSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2557US2023280648A1Composition for forming metal oxide film, patterning process, and method for forming metal oxide filmSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2657US2024153771A1Composition For Forming Metal Oxide Film, Patterning Process, And Method For Forming Metal Oxide FilmSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2756US10007183B2Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2015·Granted Jun 26, 2018·0 cites·28 claims
- 2856US2023305405A1Composition for forming silicon-containing metal hard mask and patterning processSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 2955US2023152702A1Material for forming filling film for inhibiting semiconductor substrate pattern collapse, and method for treating semiconductor substrateSHINETSU CHEMICAL CO·Filed 2022·Application pending·0 cites
- 3054US2023274936A1Planarizing agent for forming organic film, composition for forming organic film, method for forming organic film, and patterning processSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 3153US8652267B2Coated-type silicon-containing film stripping processOGIHARA TSUTOMU·Filed 2009·Granted Feb 18, 2014·0 cites·8 claims
- 3253US2025266263A1Method For Forming Organic Film And Method For Manufacturing Substrate For Semiconductor DeviceSHINETSU CHEMICAL CO·Filed 2025·Application pending·0 cites
- 3351US11782347B2Composition for forming organic film, patterning process, and polymerSHINETSU CHEMICAL CO·Filed 2020·Granted Oct 10, 2023·0 cites·20 claims
- 3444US2020090935A1Patterning processSHINETSU CHEMICAL CO·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →