Inventor · disambiguated record
Tri-Rung Yew
Also filed as: YEW TRI-RUNG
91 granted patents·21 pending applications·2,311 citations·filing 1996–2022
99Inventor score
Files withUNITED MICROELECTRONICS CORP75NAT UNIV TSING HUA9UNIV TSINGHUA5UNIV NAT TSING HUA3CHEN HAN-YI1
Top patents by PatentIndex Score
112 records- 0194US5801094ADual damascene processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 1, 1998·178 cites·12 claims
- 0293US10079277B2Method of fabricating metal-insulator-metal capacitorUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 18, 2018·9 cites·12 claims
- 0392US6010931APlanarization technique for DRAM cell capacitor electrodeUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 4, 2000·88 cites·28 claims
- 0489US6159845AMethod for manufacturing dielectric layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted Dec 12, 2000·111 cites·14 claims
- 0588US7807979B2Specimen kit and fabricating method thereofNAT UNIV TSING HUA·Filed 2007·Granted Oct 5, 2010·18 cites·25 claims
- 0688US6078492AStructure of a capacitor in a semiconductor device having a self align contact window which has a slanted sidewallUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 20, 2000·62 cites·15 claims
- 0788US5998251AProcess and structure for embedded DRAMUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 7, 1999·68 cites·44 claims
- 0886US6475865B1Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 5, 2002·36 cites·6 claims
- 0986US6265780B1Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 24, 2001·65 cites·11 claims
- 1086US6184142B1Process for low k organic dielectric film etchUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 6, 2001·81 cites·18 claims
- 1185US6017817AMethod of fabricating dual damasceneUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 25, 2000·83 cites·12 claims
- 1285US5960299AMethod of fabricating a shallow-trench isolation structure in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 28, 1999·77 cites·11 claims
- 1385US5753559AMethod for growing hemispherical grain siliconUNITED MICROELECTRONICS CORP·Filed 1996·Granted May 19, 1998·59 cites·22 claims
- 1484US5994181AMethod for forming a DRAM cell electrodeUNITED MICROELECTRONICS CORP·Filed 1997·Granted Nov 30, 1999·57 cites·20 claims
- 1581US5994183AMethod for forming charge storage structureUNITED MICROELECTRONICS CORP·Filed 1997·Granted Nov 30, 1999·49 cites·14 claims
- 1681US5956598AMethod for fabricating a shallow-trench isolation structure with a rounded corner in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 21, 1999·63 cites·10 claims
- 1780US5990015ADual damascence processUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 23, 1999·60 cites·21 claims
- 1879US6306722B1Method for fabricating shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 23, 2001·53 cites·22 claims
- 1979US6265313B1Method of manufacturing copper interconnectUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 24, 2001·59 cites·7 claims
- 2078US6001733AMethod of forming a dual damascene with dummy metal linesUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 14, 1999·54 cites·8 claims
- 2175US6077769AMethod of fabricating a daul damascene structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jun 20, 2000·46 cites·26 claims
- 2275US5930618AMethod of Making High-K Dielectrics for embedded DRAMSUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 27, 1999·32 cites·28 claims
- 2373US11901554B2Anode material for secondary battery, anode for secondary battery and secondary batteryUNIV NAT TSING HUA·Filed 2022·Granted Feb 13, 2024·0 cites·5 claims
- 2472US8609981B2P-type transparent conductive oxide for solar cell comprising molybdenum trioxide doped with indiumCHEN HAN-YI·Filed 2011·Granted Dec 17, 2013·2 cites·5 claims
- 2572US6114200AMethod of fabricating a dynamic random access memory deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 5, 2000·32 cites·24 claims
- 2671US9450184B2Multilayer-stacked resistive random access memory deviceNAT UNIV TSING HUA·Filed 2015·Granted Sep 20, 2016·2 cites·9 claims
- 2771US8283469B2Perylene diimide derivative and organic semiconductor element using the same materialCHEN SZU-YING·Filed 2010·Granted Oct 9, 2012·1 cites·14 claims
- 2870US8461037B2Method for fabricating interconnections with carbon nanotubesWU HSIN-WEI·Filed 2011·Granted Jun 11, 2013·3 cites·7 claims
- 2970US7754107B2Carbon nanotube and method of visualizing carbon nanotubeNAT UNIV TSING HUA·Filed 2008·Granted Jul 13, 2010·2 cites·6 claims
- 3070US6191028B1Method of patterning dielectricUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 20, 2001·30 cites·13 claims
- 3170US6140192AMethod for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 31, 2000·30 cites·16 claims
- 3270US6037206AMethod of fabricating a capacitor of a dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 14, 2000·29 cites·24 claims
- 3368US6593223B1Method of forming dual damascene structureUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jul 15, 2003·13 cites·3 claims
- 3468US6150251AMethod of fabricating gateUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 21, 2000·25 cites·15 claims
- 3567US6680248B2Method of forming dual damascene structureUNITED MICROELECTRONICS CORP·Filed 2001·Granted Jan 20, 2004·14 cites·31 claims
- 3667US6001414ADual damascene processing methodUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 14, 1999·34 cites·20 claims
- 3766US11894556B2Anode material for secondary battery, anode for secondary battery and secondary batteryUNIV NAT TSING HUA·Filed 2020·Granted Feb 6, 2024·0 cites·5 claims
- 3866US7858147B2Interconnect structure and method of fabricating the sameNAT UNIV TSING HUA·Filed 2008·Granted Dec 28, 2010·4 cites·11 claims
- 3966US6159661ADual damascene processUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 12, 2000·33 cites·20 claims
- 4066US6146941AMethod for fabricating a capacitor in a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 14, 2000·21 cites·23 claims
- 4166US6025264AFabricating method of a barrier layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 15, 2000·32 cites·23 claims
- 4265US6479344B2Method of fabricating DRAM capacitorUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 12, 2002·8 cites·3 claims
- 4363US6894364B2Capacitor in an interconnect system and method of manufacturing thereofUNITED MICROELECTRONICS CORP·Filed 2003·Granted May 17, 2005·13 cites·13 claims
- 4463US6291288B1Method of fabricating a thin and structurally-undefective dielectric structure for a storage capacitor in dynamic random-access memoryUNITED MICROELECTRONICS CORP·Filed 1999·Granted Sep 18, 2001·26 cites·14 claims
- 4563US6254676B1Method for manufacturing metal oxide semiconductor transistor having raised source/drainUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 3, 2001·28 cites·20 claims
- 4663US6235606B1Method of fabricating shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 22, 2001·29 cites·14 claims
- 4762US6221712B1Method for fabricating gate oxide layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 24, 2001·26 cites·27 claims
- 4862US6027994AMethod to fabricate a dual metal-damascene structure in a substrateUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 22, 2000·28 cites·20 claims
- 4962US6020258AMethod for unlanded via etching using etch stopFiled 1997·Granted Feb 1, 2000·26 cites·13 claims
- 5061US10615449B2Electrode material for secondary battery and secondary batteryUNIV NAT TSING HUA·Filed 2018·Granted Apr 7, 2020·0 cites·6 claims
Showing the top 50 of 112 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →