Inventor · disambiguated record
Tsun-Min Cheng
Also filed as: CHENG TSUN-MIN
44 granted patents·8 pending applications·112 citations·filing 2010–2022
97Inventor score
Files withUNITED MICROELECTRONICS CORP41CHENG TSUN-MIN2Chen jia-jia2LIN CHUN-LING2FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD1
Top patents by PatentIndex Score
52 records- 0196US10043811B1Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Aug 7, 2018·14 cites·7 claims
- 0292US11069559B1Semiconductor structure and method of forming sameNEXCHIP SEMICONDUCTOR CORP·Filed 2020·Granted Jul 20, 2021·9 cites·8 claims
- 0392US8836049B2Semiconductor structure and process thereofTSAI MIN-CHUAN·Filed 2012·Granted Sep 16, 2014·29 cites·12 claims
- 0490US9754943B1Dynamic random access memory deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 5, 2017·8 cites·15 claims
- 0589US10290638B1Method of forming dynamic random access memory deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 14, 2019·5 cites·12 claims
- 0689US9953982B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 24, 2018·7 cites·11 claims
- 0785US9012324B2Through silicon via processChen jia-jia·Filed 2012·Granted Apr 21, 2015·11 cites·15 claims
- 0885US8735269B1Method for forming semiconductor structure having TiN layerUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 27, 2014·7 cites·14 claims
- 0980US9773789B1Dynamic random access memory deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 26, 2017·3 cites·11 claims
- 1079US10211211B1Method for fabricating buried word line of a dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 19, 2019·2 cites·6 claims
- 1178US10475799B2Method of fabricating bit lineUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 12, 2019·2 cites·13 claims
- 1277US9859123B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 2, 2018·2 cites·20 claims
- 1375US10312242B2Semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·2 cites·9 claims
- 1474US8420544B2Method for fabricating interconnection structure with dry-cleaning processHUANG HSIN-FU·Filed 2010·Granted Apr 16, 2013·3 cites·16 claims
- 1573US12075613B2Buried word line of a dynamic random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Aug 27, 2024·0 cites·11 claims
- 1673US11239241B2Bit line utilized in DRAMUNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 1, 2022·1 cites·6 claims
- 1772US10374051B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·1 cites·11 claims
- 1871US10475900B2Method for manufacturing a semiconductor device with a cobalt silicide filmUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 12, 2019·1 cites·9 claims
- 1968US11239243B2Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Feb 1, 2022·0 cites·3 claims
- 2066US8872286B2Metal gate structure and fabrication method thereofCHENG TSUN-MIN·Filed 2011·Granted Oct 28, 2014·3 cites·8 claims
- 2165US11799012B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Oct 24, 2023·0 cites·9 claims
- 2263US11877433B2Storage node contact structure of a memory deviceUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jan 16, 2024·0 cites·5 claims
- 2363US11222784B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jan 11, 2022·0 cites·2 claims
- 2461US9281374B2Metal gate structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2014·Granted Mar 8, 2016·1 cites·15 claims
- 2560US10685964B2Semiconductor structure for preventing row hammering issue in DRAM cell and method for manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 16, 2020·0 cites·6 claims
- 2659US2020258889A1Bit line gate structure of dynamic random access memory (dram)UNITED MICROELECTRONICS CORP·Filed 2020·Application pending·0 cites
- 2758US10804365B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 13, 2020·0 cites·10 claims
- 2857US10672774B2Bit line gate structure of dynamic random access memory (DRAM) and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 2, 2020·0 cites·11 claims
- 2956US12213303B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 3056US10756090B2Storage node contact structure of a memory device and manufacturing methods thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 25, 2020·0 cites·3 claims
- 3156US10651040B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 12, 2020·0 cites·14 claims
- 3255US10199228B2Manufacturing method of metal gate structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 5, 2019·0 cites·8 claims
- 3354US11251187B2Buried word line of a dynamic random access memory and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 15, 2022·0 cites·9 claims
- 3454US9076784B2Transistor and semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2014·Granted Jul 7, 2015·0 cites·5 claims
- 3554US8481425B2Method for fabricating through-silicon via structureLU YEN-LIANG·Filed 2011·Granted Jul 9, 2013·1 cites·17 claims
- 3652US9653300B2Structure of metal gate structure and manufacturing method of the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 16, 2017·0 cites·7 claims
- 3750US10323332B2Electrical chemical plating processUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 18, 2019·0 cites·8 claims
- 3849US10276389B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 30, 2019·0 cites·19 claims
- 3949US9412653B2Through silicon via (TSV) processUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 9, 2016·0 cites·11 claims
- 4048US11088023B2Method of forming a semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 10, 2021·0 cites·14 claims
- 4148US10707214B2Fabricating method of cobalt silicide layer coupled to contact plugUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 7, 2020·0 cites·7 claims
- 4248US10465287B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 5, 2019·0 cites·10 claims
- 4347US9136170B2Through silicon via (TSV) structure and process thereofChen jia-jia·Filed 2012·Granted Sep 15, 2015·0 cites·8 claims
- 4441US9416459B2Electrical chemical plating processLIN CHUN-LING·Filed 2011·Granted Aug 16, 2016·0 cites·20 claims
- 4541US2015061042A1Metal gate structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 4640US2014239419A1Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 4739US2015093893A1Process of forming seed layer in vertical trench/viaUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 4839US2014120711A1Method of forming metal gateUNITED MICROELECTRONICS CORP·Filed 2012·Application pending·0 cites
- 4938US9548268B2Semiconductor device having bilayer metal layerUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 17, 2017·0 cites·7 claims
- 5038US2018190662A1Bit line gate structure of dynamic random access memory (dram) and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Tsun-Min Cheng files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →