Inventor · disambiguated record
Tsung-Han Chuang
Also filed as: CHUANG TSUNG-HAN
7 granted patents·33 pending applications·4 citations·filing 2020–2025
74Inventor score
Top patents by PatentIndex Score
40 records- 0188US12342587B2Integrated circuit with nanostructure transistors and bottom dielectric insulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·1 cites·20 claims
- 0288US12317540B2Method for manufacturing semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 0387US2025359145A1Semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0481US2025366031A1Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0581US2025366139A1Spacer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0680US11458533B2Measuring device and method of physical property measuringUNIV NAT CENTRAL·Filed 2020·Granted Oct 4, 2022·2 cites·10 claims
- 0780US2025359257A1Spacer structures and contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0880US2025359254A1Field effect transistor with narrowed spacer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0980US2025359176A1Field effect transistor with isolated source/drains and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1079US2025344472A1Transistor source/drain regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1179US2025359163A1Device having hybrid nanosheet structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1279US2025351482A1Semiconductor Device Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1379US2025344467A1Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1478US2024387738A1Semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1578US2025351478A1Hybrid nanostructure scheme and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1676US2025126837A1Semiconductor device with wrap around silicide and hybrid finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1774US2024355908A1Field effect transistor with inner spacer liner layer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1874US2024379875A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1973US2024395859A1Integrated circuit with nanostructure transistors and bottom dielectric insulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2072US12336226B2Semiconductor device structure including stacked nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 2170US12051736B2Field effect transistor with inner spacer liner layer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 2270US2025098219A1Field effect transistor with isolated source/drains and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2369US12205998B2Semiconductor device with wrap around silicide and hybrid finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 2469US2024355907A1Field effect transistor with narrowed spacer and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2569US2025098237A1Hybrid nanostructure scheme and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2668US12484246B2Method of manufacturing a semiconductor device including forming a sidewall spacer on a sidewall of a channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 2768US2024304687A1Spacer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2868US2023369456A1Spacer structures and contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2968US2023420520A1Transistor Source/Drain Regions and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3066US2024282838A1Device having hybrid nanosheet structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3165US2023197856A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3261US2025380442A1Semiconductor structure with conductive structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3360US2025254921A1Semiconductor structure with air gap and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3458US2025344471A1Integrated circuit with nanostructure transistors and flexible bottom source/drain epitaxy for device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3557US2025254912A1Semiconductor device with dielectric on epitaxy sidewallTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3657US2025234603A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3756US2025142883A1Semiconductor structure with devices having different effective channels and reduced effective capacitances, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3856US2025212479A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3956US2024170556A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4051US2023395655A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Tsung-Han Chuang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →