Inventor · disambiguated record
Tsutomu Hori
Also filed as: HORI TSUTOMU
35 granted patents·20 pending applications·26 citations·filing 2010–2022
95Inventor score
Top patents by PatentIndex Score
55 records- 0197US11530491B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Dec 20, 2022·3 cites·16 claims
- 0291US9845549B2Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Dec 19, 2017·3 cites·9 claims
- 0388US9856583B2Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jan 2, 2018·2 cites·8 claims
- 0487US9777401B2Method for producing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Oct 3, 2017·2 cites·9 claims
- 0584US10700169B2Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jun 30, 2020·2 cites·13 claims
- 0682US9290860B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Mar 22, 2016·1 cites·9 claims
- 0782US8642153B2Single crystal silicon carbide substrate and method of manufacturing the sameHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·2 cites·5 claims
- 0876US11984480B2Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted May 14, 2024·1 cites·10 claims
- 0975US10513799B2Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Dec 24, 2019·0 cites·4 claims
- 1074US10121865B2Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Nov 6, 2018·2 cites·17 claims
- 1170US11053607B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jul 6, 2021·1 cites·13 claims
- 1270US10998406B2Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2020·Granted May 4, 2021·0 cites·13 claims
- 1369US12176399B2Method of manufacturing a silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2022·Granted Dec 24, 2024·0 cites·5 claims
- 1469US12125881B2Silicon carbide epitaxial substrate and silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Oct 22, 2024·1 cites·14 claims
- 1569US12014924B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jun 18, 2024·1 cites·11 claims
- 1669US10337119B2Method of manufacturing silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jul 2, 2019·1 cites·7 claims
- 1768US10427324B2Silicon carbide ingot and method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 1, 2019·1 cites·9 claims
- 1868US9546437B2Ingot, silicon carbide substrate, and method for producing ingotSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jan 17, 2017·2 cites·7 claims
- 1967US9799735B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 24, 2017·0 cites·2 claims
- 2066US10246797B2Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Apr 2, 2019·0 cites·4 claims
- 2163US10184191B2Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jan 22, 2019·0 cites·11 claims
- 2261US11066756B2Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jul 20, 2021·0 cites·3 claims
- 2357US10283596B2Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted May 7, 2019·0 cites·13 claims
- 2457US8642154B2Silicon carbide crystal ingot, silicon carbide crystal wafer, and method for fabricating silicon carbide crystal ingotHORI TSUTOMU·Filed 2012·Granted Feb 4, 2014·1 cites·6 claims
- 2555US2016138186A1Silicon carbide single-crystal substrate and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 2654US2014299048A1Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 2753US9631296B2Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Granted Apr 25, 2017·0 cites·5 claims
- 2853US2013068157A1Method of manufacturing silicon carbide crystalSASAKI MAKOTO·Filed 2012·Application pending·0 cites
- 2950US10494735B2Crystal growth apparatus, method for manufacturing silicon carbide single crystal, silicon carbide single crystal substrate, and silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Dec 3, 2019·0 cites·4 claims
- 3049US2020219981A1Silicon carbide epitaxial substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Application pending·0 cites
- 3148US11459670B2Silicon carbide epitaxial waferSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted Oct 4, 2022·0 cites·9 claims
- 3248US2017152609A1Method of manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Application pending·0 cites
- 3345US10724151B2Device of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Jul 28, 2020·0 cites·14 claims
- 3444US10714572B2Silicon carbide epitaxial substrate and method for manufacturing a silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jul 14, 2020·0 cites·3 claims
- 3544US10361273B2Silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Jul 23, 2019·0 cites·13 claims
- 3643US2014287226A1Ingot, silicon carbide substrate, and method for producing ingotSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Application pending·0 cites
- 3742US12020924B2Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2019·Granted Jun 25, 2024·0 cites·6 claims
- 3842US2016138185A1Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 3942US2017314161A1Method of manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 4042US2014030874A1Method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 4141US9777400B2Method for producing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Granted Oct 3, 2017·0 cites·8 claims
- 4241US2016083865A1Method for manufacturing silicon carbide single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 4340US2016002820A1Crucible and method for producing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2015·Application pending·0 cites
- 4440US2013092956A1Silicon carbide substrate, silicon carbide semiconductor device, method for manufacturing silicon carbide substrate, and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2012·Application pending·0 cites
- 4540US2012241741A1Silicon carbide substrateINOUE HIROKI·Filed 2012·Application pending·0 cites
- 4639US10825903B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Nov 3, 2020·0 cites·16 claims
- 4739US10811500B2Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Oct 20, 2020·0 cites·8 claims
- 4838US2013119406A1Silicon carbide substrate, semiconductor device, and methods for manufacturing themNOTSU HIROSHI·Filed 2012·Application pending·0 cites
- 4937US2012244307A1Silicon carbide substrateHORI TSUTOMU·Filed 2012·Application pending·0 cites
- 5037US2012319125A1Silicon carbide substrate and method of manufacturing the sameHORI TSUTOMU·Filed 2012·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →