Inventor · disambiguated record
Tsong-Minn Hsieh
Also filed as: HSIEH TSONG-MINN
11 granted patents·1 pending application·249 citations·filing 1998–2003
91Inventor score
Top patents by PatentIndex Score
12 records- 0194US6436764B1Method for manufacturing a flash memory with split gate cellsUNITED MICROELECTRONICS CORP·Filed 2000·Granted Aug 20, 2002·82 cites·29 claims
- 0289US6326263B1Method of fabricating a flash memory cellUNITED MICROELECTRONICS CORP·Filed 2000·Granted Dec 4, 2001·63 cites·15 claims
- 0375US6245614B1Method of manufacturing a split-gate flash memory cell with polysilicon spacersUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jun 12, 2001·22 cites·15 claims
- 0470US6657277B1Method for forming antifuse via structureUNITED MICROELECTRONICS CORP·Filed 2002·Granted Dec 2, 2003·15 cites·4 claims
- 0567US6414350B1EPROM cell having a gate structure with dual side-wall spacers of differential compositionMOSEL VITELIC INC·Filed 1999·Granted Jul 2, 2002·23 cites·10 claims
- 0667US6054350AEPROM cell having a gate structure with sidewall spacers of differential compositionMOSEL VITELIC INC·Filed 1998·Granted Apr 25, 2000·23 cites·11 claims
- 0763US6894364B2Capacitor in an interconnect system and method of manufacturing thereofUNITED MICROELECTRONICS CORP·Filed 2003·Granted May 17, 2005·13 cites·13 claims
- 0846US6767768B2Method for forming antifuse via structureUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jul 27, 2004·2 cites·16 claims
- 0944US6498030B2Surrounding-gate flash memory having a self-aligned control gateUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 24, 2002·2 cites·10 claims
- 1044US6465838B1Surrounding-gate flash memory having a self-aligned control gateUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 15, 2002·2 cites·4 claims
- 1137US6617233B2Process of fabricating an anti-fuse for avoiding a key hole exposedUNITED MICROELECTRONICS CORP·Filed 2001·Granted Sep 9, 2003·2 cites·20 claims
- 1233US2004140498A1Dual-bit nitride read only memory cellFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →