Inventor · disambiguated record

Tsai-Yu Huang

Also filed as: HUANG TSAI-YU

33 granted patents·32 pending applications·184 citations·filing 2002–2025

96Inventor score

Technology areasH10P H10D H10W H10B H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD37 HUANG TSAI YU10 MICRON TECHNOLOGY INC6 NANYA TECHNOLOGY CORP4 UNITED MICROELECTRONICS CORP4

Top patents by PatentIndex Score

65 records

0197US8421193B2Integrated circuit device having through via and method for preparing the sameHUANG TSAI YU·Filed 2010·Granted Apr 16, 2013·70 cites·18 claims
0295US9704816B1Active region structure and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 11, 2017·14 cites·16 claims
0392US12094757B2Method for manufacturing semiconductor device with semiconductor capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·1 cites·20 claims
0492US8564095B2Capacitors including a rutile titanium dioxide material and semiconductor devices incorporating sameHUANG TSAI-YU·Filed 2011·Granted Oct 22, 2013·10 cites·17 claims
0589US11901189B2Ambient controlled two-step thermal treatment for spin-on coating layer planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 13, 2024·2 cites·20 claims
0689US10770159B2Antifuse device and method of operating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Sep 8, 2020·6 cites·20 claims
0787US11688625B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
0887US8866281B2Three-dimensional integrated circuits and fabrication thereofHUANG TSAI-YU·Filed 2012·Granted Oct 21, 2014·9 cites·19 claims
0985US8420208B2High-k dielectric material and methods of forming the high-k dielectric materialHUANG TSAI-YU·Filed 2010·Granted Apr 16, 2013·7 cites·19 claims
1084US10141035B1Memory cell with a read selection transistor and a program selection transistorUNITED MICROELECTRONICS CORP·Filed 2017·Granted Nov 27, 2018·6 cites·18 claims
1184US8518486B2Methods of forming and utilizing rutile-type titanium oxideMIRIN NIK·Filed 2010·Granted Aug 27, 2013·8 cites·12 claims
1284US2025351564A1Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1384US2025329576A1Depositing and oxidizing silicon liner for forming isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1482US8748283B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 10, 2014·3 cites·21 claims
1582US6720219B2Split gate flash memory and formation method thereofNANYA TECHNOLOGY CORP·Filed 2002·Granted Apr 13, 2004·22 cites·16 claims
1681US2025351542A1Well modulation for defect inspectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1781US2025366126A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1879US10698323B2Test key layout and method of monitoring pattern misalignments using test keysUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 30, 2020·2 cites·5 claims
1978US2025357188A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2077US7358134B2Split gate flash memory cell and manufacturing method thereofPOWERCHIP SEMICONDUCTOR CORP·Filed 2005·Granted Apr 15, 2008·7 cites·10 claims
2177US2025351510A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2277US2025318207A1Nanostructure fet and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2377US2024274465A1Depositing and Oxidizing Silicon Liner for Forming Isolation RegionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2476US2025309134A1Methods for forming alignment structures with trenches for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2575US2025344464A1Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2675US2024387274A1Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2774US2024387188A1Ambient controlled two-step thermal treatment for spin-on coating layer planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2874US2024096897A1Transistor isolation regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
2972US8609553B2Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structuresHUANG TSAI-YU·Filed 2011·Granted Dec 17, 2013·2 cites·8 claims
3072US2025081572A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3171US12406938B2Methods of forming alignment structure with trenches for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·20 claims
3271US12087592B2Ambient controlled two-step thermal treatment for spin-on coating layer planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
3370US2023378001A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3470US2023326802A1Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3570US2024079278A1Well Modulation for Defect InspectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3669US12414338B2Nanostructure FET and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
3769US11996317B2Methods for forming isolation regions by depositing and oxidizing a silicon linerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·0 cites·20 claims
3868US12400910B2Method for forming semiconductor device with monoclinic crystalline metal oxide capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
3968US9030015B2Three dimensional stacked structure for chipsHUANG TSAI-YU·Filed 2014·Granted May 12, 2015·2 cites·16 claims
4067US8927441B2Methods of forming rutile titanium dioxideMICRON TECHNOLOGY INC·Filed 2013·Granted Jan 6, 2015·1 cites·20 claims
4167US2022359517A1Transistor Isolation Regions and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
4266US9209013B2Constructions comprising thermally conductive stacks containing rutile-type titanium oxideMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 8, 2015·1 cites·4 claims
4365US11670551B2Interface trap charge density reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
4464US2023008413A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4564US2025386555A1Semiconductor devices with recrystalized source/drain region and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4662US11842933B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
4761US9159731B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 13, 2015·0 cites·20 claims
4861US2025232980A1Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4960US2023378261A1Semiconductor Device and Method of Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
5059US8936991B2Methods of forming capacitors and semiconductor devices including a rutile titanium dioxide materialMICRON TECHNOLOGY INC·Filed 2014·Granted Jan 20, 2015·0 cites·19 claims

Showing the top 50 of 65 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →