Inventor · disambiguated record
Tseng-Fu Lu
Also filed as: LU TSENG · LU TSENG-FU
36 granted patents·6 pending applications·47 citations·filing 1991–2024
95Inventor score
Top patents by PatentIndex Score
42 records- 0197US11417744B2Semiconductor structure having buried gate electrode with protruding member and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 16, 2022·6 cites·13 claims
- 0297US11315928B2Semiconductor structure with buried power line and buried signal line and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Apr 26, 2022·4 cites·12 claims
- 0391US11482419B2Method for preparing transistor deviceNANYA TECHNOLOGY CORP·Filed 2020·Granted Oct 25, 2022·2 cites·8 claims
- 0488US11094692B2Semiconductor structure having active regions with different dopant concentrationsNANYA TECHNOLOGY CORP·Filed 2019·Granted Aug 17, 2021·4 cites·11 claims
- 0588US10818800B2Semiconductor structure and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2018·Granted Oct 27, 2020·5 cites·14 claims
- 0687US10763212B1Semiconductor structureNANYA TECHNOLOGY CORP·Filed 2019·Granted Sep 1, 2020·6 cites·19 claims
- 0783US10937886B2Semiconductor device with negative capacitance material in buried channelNANYA TECHNOLOGY CORP·Filed 2019·Granted Mar 2, 2021·3 cites·18 claims
- 0881US10580765B1Semiconductor structure for electrostatic discharge protectionNANYA TECHNOLOGY CORP·Filed 2018·Granted Mar 3, 2020·3 cites·10 claims
- 0977US10622030B1Memory structure with non-straight word lineNANYA TECHNOLOGY CORP·Filed 2018·Granted Apr 14, 2020·4 cites·15 claims
- 1077US10242978B1Semiconductor electrostatic discharge protection deviceNANYA TECHNOLOGY CORP·Filed 2017·Granted Mar 26, 2019·2 cites·15 claims
- 1177US2025089243A1Memory structure and method of forming thereofNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1275US10825898B2Semiconductor layout structure including asymmetrical channel regionNANYA TECHNOLOGY CORP·Filed 2019·Granted Nov 3, 2020·1 cites·8 claims
- 1373US10461191B2Semiconductor device with undercutted-gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2018·Granted Oct 29, 2019·1 cites·5 claims
- 1472US2024365530A1Memory structure and method of forming thereofNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1571US10559661B2Transistor device and semiconductor layout structure including asymmetrical channel regionNANYA TECHNOLOGY CORP·Filed 2018·Granted Feb 11, 2020·1 cites·11 claims
- 1670US11818876B2Method of manufacturing semiconductor device having reduced contact resistance between access transistors and conductive featuresNANYA TECHNOLOGY CORP·Filed 2021·Granted Nov 14, 2023·0 cites·10 claims
- 1770US11647623B2Method for manufacturing semiconductor structure with buried power line and buried signal lineNANYA TECHNOLOGY CORP·Filed 2021·Granted May 9, 2023·0 cites·8 claims
- 1869US10418356B2Diode structure and electrostatic discharge protection device including the sameNANYA TECHNOLOGY CORP·Filed 2018·Granted Sep 17, 2019·1 cites·21 claims
- 1968US12495541B2Memory structure and method of forming thereofNANYA TECHNOLOGY CORP·Filed 2022·Granted Dec 9, 2025·0 cites·11 claims
- 2068US11677008B2Method for preparing semiconductor device with T-shaped buried gate electrodeNANYA TECHNOLOGY CORP·Filed 2021·Granted Jun 13, 2023·0 cites·9 claims
- 2167US11848353B2Method of fabricating semiconductor structureNANYA TECHNOLOGY CORP·Filed 2021·Granted Dec 19, 2023·0 cites·9 claims
- 2266US11502075B2Method of forming semiconductor structureNANYA TECHNOLOGY CORP·Filed 2021·Granted Nov 15, 2022·0 cites·5 claims
- 2365US11605718B2Method for preparing semiconductor structure having buried gate electrode with protruding memberNANYA TECHNOLOGY CORP·Filed 2021·Granted Mar 14, 2023·0 cites·7 claims
- 2463US12063771B2Memory structure and method of forming thereofNANYA TECHNOLOGY CORP·Filed 2022·Granted Aug 13, 2024·0 cites·13 claims
- 2563US11437481B2Semiconductor device with T-shaped buried gate electrode and method for forming the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Sep 6, 2022·0 cites·7 claims
- 2662US2025393267A1Semiconductor structure and method of forming the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2761US11469234B2Semiconductor device having reduced contact resistance between access transistors and conductive features and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Oct 11, 2022·0 cites·10 claims
- 2857US12453084B2Method for manufacturing a semiconductor memoryNANYA TECHNOLOGY CORP·Filed 2022·Granted Oct 21, 2025·0 cites·19 claims
- 2957US11502163B2Semiconductor structure and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2019·Granted Nov 15, 2022·0 cites·10 claims
- 3057US10559560B2Semiconductor electrostatic discharge protection deviceNANYA TECHNOLOGY CORP·Filed 2018·Granted Feb 11, 2020·0 cites·6 claims
- 3157US2024413004A1Semiconductor device manufacturing method for reducing random dopant fluctuationNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 3256US12507402B2Memory with a contact between a data storage device and a data processing deviceNANYA TECHNOLOGY CORP·Filed 2022·Granted Dec 23, 2025·0 cites·17 claims
- 3354US10903080B2Transistor device and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2018·Granted Jan 26, 2021·0 cites·9 claims
- 3452US10825931B2Semiconductor device with undercutted-gate and method of fabricating the sameNANYA TECHNOLOGY CORP·Filed 2018·Granted Nov 3, 2020·0 cites·10 claims
- 3550US10381351B2Transistor structure and semiconductor layout structureNANYA TECHNOLOGY CORP·Filed 2018·Granted Aug 13, 2019·0 cites·20 claims
- 3649US11107807B1IC package having a metal die for ESP protectionNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 31, 2021·0 cites·14 claims
- 3748US11037921B2Off chip driver structureNANYA TECHNOLOGY CORP·Filed 2019·Granted Jun 15, 2021·0 cites·10 claims
- 3844US12424564B2Semiconductor device having a shielding line for signal crosstalk suppressionNANYA TECHNOLOGY CORP·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 3941US2023268193A1Method for manufacturing a semiconductor device having a shileing feature for signal crosstalk suppressionNANYA TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 4040US2020176452A1Memory device and method of forming the sameNANYA TECHNOLOGY CORP·Filed 2018·Application pending·0 cites
- 4137USD333797SSolar powered construction lightLU TSENG·Filed 1991·Granted Mar 9, 1993·4 cites·1 claims
- 4230US8741679B2Surface treatment method by using the NH3 plasma treatment to modify the sensing thin-filmLAI CHAO-SUNG·Filed 2012·Granted Jun 3, 2014·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →