Inventor · disambiguated record
Tsuyoshi Ohtsuki
Also filed as: OHTSUKI TSUYOSHI
20 granted patents·14 pending applications·8 citations·filing 2000–2023
88Inventor score
Files withSHINETSU HANDOTAI KK19SHIN ETSU HANDOTAI CO LTD10OHTSUKI TSUYOSHI3MITANI KIYOSHI1TAHARA FUMIO1
Top patents by PatentIndex Score
34 records- 0171US8575722B2Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layerMITANI KIYOSHI·Filed 2009·Granted Nov 5, 2013·4 cites·5 claims
- 0270US11248306B2Anodic-oxidation equipment, anodic-oxidation method, and method for producing cathode of anodic-oxidation equipmentSHINETSU HANDOTAI KK·Filed 2019·Granted Feb 15, 2022·0 cites·6 claims
- 0365US9748151B2Method for evaluating semiconductor substrateSHINETSU HANDOTAI KK·Filed 2015·Granted Aug 29, 2017·1 cites·11 claims
- 0463US11824070B2Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensorSHINETSU HANDOTAI KK·Filed 2020·Granted Nov 21, 2023·0 cites·10 claims
- 0561US8043871B2Method for forming oxide film on silicon waferSHINETSU HANDOTAI KK·Filed 2009·Granted Oct 25, 2011·1 cites·19 claims
- 0657US12387126B2Method for producing semiconductor apparatus for quantum computerSHIN ETSU HANDOTAI CO LTD·Filed 2021·Granted Aug 12, 2025·0 cites·12 claims
- 0757US8877609B2Method for manufacturing bonded substrate having an insulator layer in part of bonded substrateOHTSUKI TSUYOSHI·Filed 2012·Granted Nov 4, 2014·1 cites·16 claims
- 0856US2025369103A1Method for growing diamond layer and microwave plasma cvd apparatusSHIN ETSU HANDOTAI CO LTD·Filed 2023·Application pending·0 cites
- 0955US2025391731A1Member having heat spreader structure and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2023·Application pending·0 cites
- 1055US2025313989A1Method for producing heteroepitaxial waferSHIN ETSU HANDOTAI CO LTD·Filed 2023·Application pending·0 cites
- 1154US12368107B2Method for producing semiconductor apparatus and semiconductor apparatusSHIN ETSU HANDOTAI CO LTD·Filed 2021·Granted Jul 22, 2025·0 cites·8 claims
- 1254US2024395563A1Epitaxial wafer and production method thereforSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1354US2025154646A1Substrate for high-frequency device, and method for producing sameSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 1453US2025109488A1Method for growing diamond on silicon substrate and method for selectively growing diamond on silicon substrateSHIN ETSU HANDOTAI CO LTD·Filed 2023·Application pending·0 cites
- 1552US2025163609A1Method for producing heteroepitaxial filmSHIN ETSU HANDOTAI CO LTD·Filed 2022·Application pending·0 cites
- 1652US2024274477A1Method for forming thermal oxide film on semiconductor substrate and method for producing semiconductor deviceSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1751US2024429046A1Method for producing heteroepitaxial waferSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1850US2024162041A1Method for producing nitride semiconductor waferSHINETSU HANDOTAI KK·Filed 2022·Application pending·0 cites
- 1949US12482647B2Method for forming thermal oxide film on semiconductor substrateSHIN ETSU HANDOTAI CO LTD·Filed 2021·Granted Nov 25, 2025·0 cites·18 claims
- 2049US12183641B2Method for evaluating semiconductor substrateSHINETSU HANDOTAI KK·Filed 2020·Granted Dec 31, 2024·0 cites·9 claims
- 2148US12308225B2Method for forming thermal oxide film on semiconductor substrateSHIN ETSU HANDOTAI CO LTD·Filed 2021·Granted May 20, 2025·0 cites·18 claims
- 2247US9935021B2Method for evaluating a semiconductor waferSHINETSU HANDOTAI KK·Filed 2014·Granted Apr 3, 2018·0 cites·8 claims
- 2347US2023207399A1Method for dry-etching semiconductor substrate and method for dry-etching silicon oxide filmSHINETSU HANDOTAI KK·Filed 2021·Application pending·0 cites
- 2445US6541117B1Silicon epitaxial wafer and a method for producing itSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 1, 2003·1 cites·3 claims
- 2545US2010022038A1Method for evaluating semiconductor waferSHINETSU HANDOTAI KK·Filed 2007·Application pending·0 cites
- 2643US10886129B2Method for manufacturing semiconductor device and method for evaluating semiconductor deviceSHINETSU HANDOTAI KK·Filed 2017·Granted Jan 5, 2021·0 cites·4 claims
- 2743US7525327B2Apparatus for evaluating semiconductor waferSHINETSU HANDOTAI KK·Filed 2005·Granted Apr 28, 2009·0 cites·38 claims
- 2842US7633305B2Method for evaluating semiconductor wafer and apparatus for evaluating semiconductor waferSHINETSU HANDOTAI KK·Filed 2005·Granted Dec 15, 2009·0 cites·4 claims
- 2940US9696368B2Semiconductor substrate evaluating method, semiconductor substrate for evaluation, and semiconductor deviceOHTSUKI TSUYOSHI·Filed 2013·Granted Jul 4, 2017·0 cites·11 claims
- 3040US8551246B2Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal waferTAHARA FUMIO·Filed 2009·Granted Oct 8, 2013·0 cites·5 claims
- 3139US8900971B2Bonded substrate and manufacturing method thereofOHTSUKI TSUYOSHI·Filed 2012·Granted Dec 2, 2014·0 cites·15 claims
- 3236US9780006B2Method for evaluating SOI substrateSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 3, 2017·0 cites·1 claims
- 3336US2008054920A1Method For Evaluating Soi WaferSHINETSU HANDOTAI KK·Filed 2005·Application pending·0 cites
- 3433US2016351415A1Semiconductor substrate for flash lamp anneal, anneal substrate, semiconductor device, and method for manufacturing semiconductor deviceSHINETSU HANDOTAI KK·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Tsuyoshi Ohtsuki files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →