Inventor · disambiguated record
Tsai-Yu Wen
Also filed as: WEN TSAI-YU
25 granted patents·3 pending applications·125 citations·filing 2011–2022
94Inventor score
Top patents by PatentIndex Score
28 records- 0197US8853060B1Epitaxial processUNITED MICROELECTRONICS CORP·Filed 2013·Granted Oct 7, 2014·44 cites·19 claims
- 0296US9685533B1Transistor with SiCN/SiOCN mulitlayer spacerUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jun 20, 2017·17 cites·6 claims
- 0396US9431483B1Nanowire and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 30, 2016·16 cites·11 claims
- 0495US9379182B1Method for forming nanowire and semiconductor device formed with the nanowireUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 28, 2016·13 cites·8 claims
- 0590US9871136B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 16, 2018·7 cites·17 claims
- 0687US9859164B1Method for manufacturing finsUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 2, 2018·5 cites·11 claims
- 0785US9012324B2Through silicon via processChen jia-jia·Filed 2012·Granted Apr 21, 2015·11 cites·15 claims
- 0879US9882022B2Method for manufacturing transistor with SiCN/SiOCN multilayer spacerUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 30, 2018·2 cites·4 claims
- 0976US9117878B2Method for manufacturing shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2012·Granted Aug 25, 2015·3 cites·19 claims
- 1075US11557654B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 17, 2023·0 cites·14 claims
- 1175US9330902B1Method for forming HfOx film based on atomic layer deposition (ALD) processUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 3, 2016·2 cites·13 claims
- 1274US11646349B2Structure of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted May 9, 2023·0 cites·7 claims
- 1373US11664425B2P-type field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted May 30, 2023·0 cites·6 claims
- 1471US11195918B1Structure of semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Dec 7, 2021·0 cites·7 claims
- 1569US9034705B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2013·Granted May 19, 2015·5 cites·19 claims
- 1666US11271078B2P-type field effect transistor having channel region with top portion and bottom portionUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 8, 2022·0 cites·1 claims
- 1761US12501694B2Semiconductor device and method for forming the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Dec 16, 2025·0 cites·7 claims
- 1858US11791413B2Semiconductor device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 1957US10651275B2P-type field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 12, 2020·0 cites·6 claims
- 2055US9947588B1Method for manufacturing finsUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 17, 2018·0 cites·8 claims
- 2155US9735235B2Nanowire and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 15, 2017·0 cites·4 claims
- 2253US9653549B2Semiconductor device formed with nanowireUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 16, 2017·0 cites·8 claims
- 2351US2018083141A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2445US11107689B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Aug 31, 2021·0 cites·12 claims
- 2545US9349599B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 24, 2016·0 cites·17 claims
- 2643US8697508B2Semiconductor processWEN TSAI-YU·Filed 2012·Granted Apr 15, 2014·0 cites·16 claims
- 2736US2019067477A1Semiconductor structure with doped fin-shaped structures and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2835US2012256275A1Metal gate structure and manufacturing method thereofHUANG HSIN-FU·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →