Inventor · disambiguated record
Tsung-Yu Yang
Also filed as: YANG TSUNG-YU
65 granted patents·22 pending applications·78 citations·filing 2007–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD45UNITED MICROELECTRONICS CORP14HUANG CHIH-FANG7IND TECH RES INST4INNOLUX CORP3
Top patents by PatentIndex Score
87 records- 0198US11031303B1Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·6 cites·12 claims
- 0297US11450574B2Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·3 cites·20 claims
- 0395US11404305B1Manufacturing method of isolation structures for semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 0495US10475877B1Multi-terminal inductor for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·6 cites·20 claims
- 0594US11670689B2Method for eliminating divot formation and semiconductor device manufactured using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
- 0694US10128259B1Method for manufacturing embedded memory using high-K-metal-gate (HKMG) technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 13, 2018·9 cites·20 claims
- 0793US12002883B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jun 4, 2024·2 cites·7 claims
- 0893US11575008B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·20 claims
- 0992US11682726B2High voltage semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jun 20, 2023·2 cites·10 claims
- 1092US11532637B2Embedded flash memory cell including a tunnel dielectric layer having different thicknesses over a memory regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 1189US10840333B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·3 cites·20 claims
- 1289US10269909B1Memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·5 cites·20 claims
- 1389US9269591B2Handle wafer for high resistivity trap-rich SOITAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 23, 2016·10 cites·16 claims
- 1488US10170488B1Non-volatile memory of semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·5 cites·20 claims
- 1587US12402378B2Semiconductor arrangement including first and second gate electrodes and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1687US10879257B2Integrated chip having a logic gate electrode and a tunnel dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·3 cites·20 claims
- 1784US2025105099A1Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1883US12165955B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 1983US11894425B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 6, 2024·0 cites·20 claims
- 2081US12507484B2BCD device layout area defined by a deep trench isolation structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 2180US12114503B2Integrated chip including a tunnel dielectric layer which has different thicknesses over a protrusion region of a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 2280US2025204021A1Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2379US12211906B2Method for eliminating divot formation and semiconductor device manufactured using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2478US12279446B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Granted Apr 15, 2025·0 cites·8 claims
- 2578US12266577B2Deep trench isolation structure and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2678US12206020B2High voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jan 21, 2025·0 cites·9 claims
- 2778US2024379771A1Method for eliminating divot formation and semiconductor device manufactured using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2877US12080794B2Manufacturing method of high voltage semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Granted Sep 3, 2024·0 cites·9 claims
- 2976US11810300B2Method for detecting image of esophageal cancer using hyperspectral imagingUNIV NAT CHUNG CHENG·Filed 2021·Granted Nov 7, 2023·1 cites·10 claims
- 3075US11854942B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3175US9799755B2Method for manufacturing memory device and method for manufacturing shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·2 cites·18 claims
- 3275US2025251633A1Electronic deviceINNOLUX CORP·Filed 2025·Application pending·0 cites
- 3375US2025220954A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3474US10672860B2Multi-terminal inductor for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·1 cites·20 claims
- 3573US12313945B2Electronic deviceINNOLUX CORP·Filed 2023·Granted May 27, 2025·0 cites·9 claims
- 3673US9287461B2Light-emitting diode and method for manufacturing the sameLEXTAR ELECTRONICS CORP·Filed 2013·Granted Mar 15, 2016·2 cites·9 claims
- 3772US11855071B2BCD device layout area defined by a deep trench isolation structure and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3871US7985065B2Pitch adjustment device for blow molding machineCHUMPOWER MACHINERY CORP·Filed 2008·Granted Jul 26, 2011·5 cites·15 claims
- 3971US2024339534A1Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 4069US2025367775A1Five-axis spatial precision measurement fixtureIND TECH RES INST·Filed 2024·Application pending·0 cites
- 4167US10879342B2Multi-terminal inductor for integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 4267US10290722B2Memory device and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 14, 2019·1 cites·20 claims
- 4365US12046671B2Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2022·Granted Jul 23, 2024·0 cites·10 claims
- 4464US11342025B2Non-volatile memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 4564US11189546B2Semiconductor arrangement and method for makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·0 cites·20 claims
- 4663US2025176088A1Electronic deviceINNOLUX CORP·Filed 2024·Application pending·0 cites
- 4762US12471329B2Semiconductor structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 4862US11774392B1Chip crack detection structureUNITED MICROELECTRONICS CORP·Filed 2022·Granted Oct 3, 2023·0 cites·19 claims
- 4962US8941211B2Integrated circuit using deep trench through silicon (DTS)TAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 27, 2015·1 cites·20 claims
- 5062US2025380407A1Programmable device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →