Inventor · disambiguated record
Tse-Yong Yao
Also filed as: YAO TSE-YONG
14 granted patents·2 pending applications·1,112 citations·filing 1995–2004
95Inventor score
Files withAPPLIED MATERIALS INC14
Top patents by PatentIndex Score
16 records- 0198US6217721B1Filling narrow apertures and forming interconnects with a metal utilizing a crystallographically oriented liner layerAPPLIED MATERIALS INC·Filed 1996·Granted Apr 17, 2001·206 cites·59 claims
- 0296US6328871B1Barrier layer for electroplating processesAPPLIED MATERIALS INC·Filed 1999·Granted Dec 11, 2001·161 cites·12 claims
- 0396US6051114AUse of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor depositionAPPLIED MATERIALS INC·Filed 1997·Granted Apr 18, 2000·304 cites·20 claims
- 0496US5962923ASemiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenchesAPPLIED MATERIALS INC·Filed 1995·Granted Oct 5, 1999·142 cites·31 claims
- 0589US6790776B2Barrier layer for electroplating processesAPPLIED MATERIALS INC·Filed 2001·Granted Sep 14, 2004·34 cites·19 claims
- 0687US6136095AApparatus for filling apertures in a film layer on a semiconductor substrateAPPLIED MATERIALS INC·Filed 1997·Granted Oct 24, 2000·52 cites·10 claims
- 0786US6436302B1Post CU CMP polishing for reduced defectsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 20, 2002·45 cites·13 claims
- 0880US6313027B1Method for low thermal budget metal filling and planarization of contacts vias and trenchesAPPLIED MATERIALS INC·Filed 1997·Granted Nov 6, 2001·33 cites·40 claims
- 0973US6607640B2Temperature control of a substrateAPPLIED MATERIALS INC·Filed 2000·Granted Aug 19, 2003·13 cites·5 claims
- 1070US6436832B1Method to reduce polish initiation time in a polish processAPPLIED MATERIALS INC·Filed 2000·Granted Aug 20, 2002·16 cites·7 claims
- 1165US6140235AHigh pressure copper fill at low temperatureAPPLIED MATERIALS INC·Filed 1997·Granted Oct 31, 2000·29 cites·10 claims
- 1265US5668055AMethod of filling of contact openings and vias by self-extrusion of overlying compressively stressed matal layerAPPLIED MATERIALS INC·Filed 1995·Granted Sep 16, 1997·30 cites·21 claims
- 1362US6277198B1Use of tapered shadow clamp ring to provide improved physical vapor deposition systemAPPLIED MATERIALS INC·Filed 1999·Granted Aug 21, 2001·27 cites·23 claims
- 1456US5847461AIntegrated circuit structure having contact openings and vias filled by self-extrusion of overlying metal layerAPPLIED MATERIALS INC·Filed 1996·Granted Dec 8, 1998·20 cites·14 claims
- 1544US2005031784A1Barrier layer for electroplating processesFiled 2004·Application pending·0 cites
- 1638US2002089027A1Apparatus for filling apertures in a film layer on a semiconductor structureFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →