Inventor · disambiguated record
Tuo-Hsin Chien
Also filed as: CHIEN TUO-HSIN
20 granted patents·10 pending applications·201 citations·filing 2004–2024
94Inventor score
Files withSYSTEM GENERAL CORP15TAIWAN SEMICONDUCTOR MFG CO LTD8HUANG CHIH-FENG4TAIWAN SEMICONDUCTOR MFG2FU CHING-HUNG1
Top patents by PatentIndex Score
30 records- 0193US11063157B1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·6 cites·20 claims
- 0292US6903421B1Isolated high-voltage LDMOS transistor having a split well structureSYSTEM GENERAL CORP·Filed 2004·Granted Jun 7, 2005·69 cites·8 claims
- 0388US11769792B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
- 0487US7042028B1Electrostatic discharge deviceSYSTEM GENERAL CORP·Filed 2005·Granted May 9, 2006·14 cites·13 claims
- 0586US6873011B1High voltage and low on-resistance LDMOS transistor having equalized capacitanceSYSTEM GENERAL CORP·Filed 2004·Granted Mar 29, 2005·41 cites·7 claims
- 0685US6995428B2High voltage LDMOS transistor having an isolated structureSYSTEM GENERAL CORP·Filed 2004·Granted Feb 7, 2006·36 cites·12 claims
- 0784US2025063744A1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0883US12176387B2Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 0978US9373627B2Multiple-time programming memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 21, 2016·2 cites·20 claims
- 1072US7285837B2Electrostatic discharge device integrated with padSYSTEM GENERAL CORP·Filed 2005·Granted Oct 23, 2007·5 cites·16 claims
- 1168US7858466B2Different-voltage device manufactured by a CMOS compatible process and high-voltage device used in the different-voltage deviceSYSTEM GENERAL CORP·Filed 2007·Granted Dec 28, 2010·3 cites·3 claims
- 1267US8772854B2Multiple-time programming memory cells and methods for forming the sameFU CHING-HUNG·Filed 2012·Granted Jul 8, 2014·2 cites·14 claims
- 1364US7205201B2CMOS compatible process with different-voltage devicesSYSTEM GENERAL CORP·Filed 2004·Granted Apr 17, 2007·9 cites·11 claims
- 1460US7417287B2Electrostatic discharge device having controllable trigger voltageSYSTEM GENERAL CORP·Filed 2005·Granted Aug 26, 2008·2 cites·6 claims
- 1560US7355250B2Electrostatic discharge device with controllable holding currentSYSTEM GENERAL CORP·Filed 2005·Granted Apr 8, 2008·2 cites·23 claims
- 1660US2025240982A1Thin film resistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1758US2025006777A1Thin film resistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1857US8952442B2Multiple-time programming memory cells and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 10, 2015·0 cites·20 claims
- 1957US7615826B2Electrostatic discharge protection semiconductor structureSYSTEM GENERAL CORP·Filed 2006·Granted Nov 10, 2009·1 cites·12 claims
- 2057US7102194B2High voltage and low on-resistance LDMOS transistor having radiation structure and isolation effectSYSTEM GENERAL CORP·Filed 2004·Granted Sep 5, 2006·7 cites·14 claims
- 2156US2025063743A1In-trench capacitor merged structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2255US2024363529A1Thin film resistor with graded resistive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2346US2007096255A1High resistance cmos resistorSYSTEM GENERAL CORP·Filed 2006·Application pending·0 cites
- 2444US2007117328A1Vertical transistor with field region structureHUANG CHIH-FENG·Filed 2007·Application pending·0 cites
- 2543US7169661B2Process of fabricating high resistance CMOS resistorSYSTEM GENERAL CORP·Filed 2004·Granted Jan 30, 2007·1 cites·22 claims
- 2641US2006197153A1Vertical transistor with field region structureHUANG CHIH-FENG·Filed 2005·Application pending·0 cites
- 2739US7923787B2MOSFET with isolation structure and fabrication method thereofSYSTEM GENERAL CORP·Filed 2005·Granted Apr 12, 2011·0 cites·12 claims
- 2839US7847365B2MOSFET with isolation structure for monolithic integration and fabrication method thereofSYSTEM GENERAL CORP·Filed 2005·Granted Dec 7, 2010·0 cites·12 claims
- 2936US2007052032A1Electrostatic discharge device with latch-up immunityHUANG CHIH-FENG·Filed 2005·Application pending·0 cites
- 3035US2006220170A1High-voltage field effect transistor having isolation structureHUANG CHIH-FENG·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →