Inventor · disambiguated record
Tung-I Lin
Also filed as: LIN TUNG-I
18 granted patents·1 pending application·58 citations·filing 2013–2023
91Inventor score
Top patents by PatentIndex Score
19 records- 0196US9899441B1Deep trench isolation (DTI) structure with a tri-layer passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·17 cites·20 claims
- 0293US9978650B2Transistor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·9 cites·19 claims
- 0392US10147756B2Deep trench isolation structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 4, 2018·7 cites·20 claims
- 0492US9799702B2Deep trench isolation structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 24, 2017·8 cites·20 claims
- 0590US10453757B2Transistor channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 22, 2019·5 cites·15 claims
- 0690US9905600B1Image sensor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 27, 2018·7 cites·20 claims
- 0777US9887235B2Pixel isolation device and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·2 cites·20 claims
- 0873US9099324B2Semiconductor device with trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 4, 2015·2 cites·20 claims
- 0972US10269864B2Pixel isolation device and fabrication methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·1 cites·20 claims
- 1071US12456661B2Semiconductor structure having a silicon active layer formed over a SiGe etch stop layer and an insulating layer with a through silicon via (TSV) passed therethroughTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 28, 2025·0 cites·20 claims
- 1164US12507433B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 1263US10971406B2Method of forming source/drain regions of transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·0 cites·20 claims
- 1363US9349768B2CMOS image sensor with epitaxial passivation layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 24, 2016·0 cites·20 claims
- 1456US9245974B2Performance boost by silicon epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 26, 2016·0 cites·20 claims
- 1555US11049797B2Method for manufacturing a semiconductor structure comprising a semiconductor device layer formed on a tem, porary substrate having a graded SiGe etch stop layer therebetweenTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 29, 2021·0 cites·20 claims
- 1653US9595589B2Transistor with performance boost by epitaxial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 14, 2017·0 cites·20 claims
- 1752US2024363652A1Deep trench capacitor structure and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1848US9634096B2Semiconductor device with trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·0 cites·20 claims
- 1945US11610808B2Semiconductor wafer with low defect count and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 21, 2023·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →