Inventor · disambiguated record

Tzu-Yu Chen

Also filed as: CHEN TZU-YU

55 granted patents·32 pending applications·156 citations·filing 1991–2025

97Inventor score

Technology areasH10D H10W H10P G06F H04N

Files withTAIWAN SEMICONDUCTOR MFG CO LTD61 PIXART IMAGING INC13 CHEN TZU YU5 NALCO CHEMICAL CO3 CHEN SHU-CHIN1

Top patents by PatentIndex Score

87 records

0198US11437084B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 6, 2022·5 cites·20 claims
0298US10930333B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·20 cites·20 claims
0396US11869564B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
0494US11706930B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
0594US11296099B2FeRAM decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
0691US11183503B2Memory cell having top and bottom electrodes defining recessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·5 cites·20 claims
0790US11921940B1Optical navigation device capable of automatically switching between different tracking modes in response to different tracking surfacesPIXART IMAGING INC·Filed 2023·Granted Mar 5, 2024·1 cites·18 claims
0888US11800720B2Memory cell having a top electrode interconnect arranged laterally from a recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·20 claims
0986US11751401B2Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
1085US11088203B23D RRAM cell structure for reducing forming and set voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·5 cites·20 claims
1185US10627518B2Tracking device with improved work surface adaptabilityPIXART IMAGING INC·Filed 2017·Granted Apr 21, 2020·3 cites·18 claims
1284US10029423B2Printing correction method and three-dimensional printing deviceXYZPRINTING INC·Filed 2015·Granted Jul 24, 2018·2 cites·12 claims
1384US2025324610A1Ferroelectric memory device with leakage barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1484US2025331192A1Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1584US2025048647A1FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCHTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1683US12429592B2Tracking device and electronic device having two image sensorsPIXART IMAGING INC·Filed 2024·Granted Sep 30, 2025·0 cites·17 claims
1783US9793286B2Embedded HKMG non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 17, 2017·4 cites·20 claims
1882US12322429B2Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
1982US12167611B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
2080US12356630B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
2180US12082421B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
2280US10962646B2Electronic device with improved work surface adaptabilityPIXART IMAGING INC·Filed 2020·Granted Mar 30, 2021·1 cites·18 claims
2380US2025266073A1Embedded ferroelectric memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2479US9831262B2Embedded HKMG non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·3 cites·20 claims
2579US2025338503A1Trench-type beol memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2679US2024373645A1Feram decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2779US2024365561A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2878US12140674B2Electronic device with light sources emitting in different directionsPIXART IMAGING INC·Filed 2023·Granted Nov 12, 2024·0 cites·18 claims
2977US12419056B2Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
3077US11808853B2Tracking device with improved work surface adaptabilityPIXART IMAGING INC·Filed 2022·Granted Nov 7, 2023·0 cites·16 claims
3177US11227872B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
3277US7179384B2Control of cooling water system using rate of consumption of fluorescent polymerNALCO CO·Filed 2004·Granted Feb 20, 2007·21 cites·2 claims
3377US2025351374A1Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3476US2025318142A1Interfacial layer with high texture uniformity for ferroelectric layer enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3575US11785777B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
3674US12432929B2Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
3774US12114509B2FeRAM decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
3874US2024389350A1Mfm device with an enhanced bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3973US11849588B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
4073US2024357833A1METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4172US11751406B23D RRAM cell structure for reducing forming and set voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
4272US11195840B2Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·1 cites·20 claims
4372US9274617B2Optical navigation apparatus calculating an image quality index to determine a matching block sizePIXART IMAGING INC·Filed 2013·Granted Mar 1, 2016·3 cites·32 claims
4471US12369327B2MFM device with an enhanced bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
4570US12457751B2Interfacial layer with high texture uniformity for ferroelectric layer enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
4670US12171104B2Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
4770US2024363155A1Method for efficiently waking up ferroelectric memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4869US11307308B2Tracking device and electronic device with improved work surface adaptabilityPIXART IMAGING INC·Filed 2021·Granted Apr 19, 2022·0 cites·15 claims
4968US12238934B2Method of fabricating semiconductor device comprising ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·0 cites·20 claims
5068US9261982B2Image adjusting method and optical navigating apparatus utilizing the image adjusting methodPIXART IMAGING INC·Filed 2013·Granted Feb 16, 2016·2 cites·20 claims

Showing the top 50 of 87 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Tzu-Yu Chen files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →