Inventor · disambiguated record

Tze-Liang Lee

Also filed as: LEE TZE-LIANG

309 granted patents·146 pending applications·3,265 citations·filing 1999–2025

99Inventor score

Technology areasH10P H10W H10D G03F H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD321 TAIWAN SEMICONDUCTOR MFG87 CHEN CHIEN HAO9 CHENG YU-HUNG5 YU MING-HUA4

Top patents by PatentIndex Score

455 records

0199US8963258B2FinFET with bottom SiGe layer in source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 24, 2015·342 cites·20 claims
0298US11887851B2Method for forming and using maskTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 30, 2024·4 cites·20 claims
0398US11705332B2Photoresist layer surface treatment, cap layer, and method of forming photoresist patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·9 cites·20 claims
0498US11437277B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·19 claims
0598US11053584B2System and method for supplying a precursor for an atomic layer deposition (ALD) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·278 cites·20 claims
0698US9754818B2Via patterning using multiple photo multiple etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·472 cites·20 claims
0798US9287382B1Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·46 cites·20 claims
0897US11588030B2Integrated circuit structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·20 claims
0997US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
1097US11271083B2Semiconductor device, FinFET device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 8, 2022·6 cites·20 claims
1197US9754822B1Interconnect structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·30 cites·20 claims
1297US7868317B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 11, 2011·51 cites·24 claims
1397US7554110B2MOS devices with partial stressor channelTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 30, 2009·48 cites·29 claims
1496US12033890B2Patterning interconnects and other structures by photo-sensitizing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·2 cites·20 claims
1596US12027423B2Forming isolation regions for separating fins and gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
1696US11715640B2Patterning material including silicon-containing layer and method for semiconductor device fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·3 cites·20 claims
1796US11482411B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 25, 2022·3 cites·20 claims
1896US9679804B1Multi-patterning to form vias with straight profilesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 13, 2017·19 cites·20 claims
1996US9412648B1Via patterning using multiple photo multiple etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 9, 2016·13 cites·20 claims
2096US7164163B2Strained transistor with hybrid-strain inducing layerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 16, 2007·47 cites·20 claims
2196US6649538B1Method for plasma treating and plasma nitriding gate oxidesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 18, 2003·139 cites·17 claims
2296US6423640B1Headless CMP process for oxide planarizationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 23, 2002·217 cites·16 claims
2395US12237419B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 25, 2025·2 cites·20 claims
2495US12057315B2Photoresist layer surface treatment, cap layer, and method of forming photoresist patternTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·2 cites·20 claims
2595US11929281B2Reducing oxidation by etching sacrificial and protection layer separatelyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
2695US11901409B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·17 claims
2795US11822237B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 21, 2023·3 cites·20 claims
2895US11676855B2Patterning interconnects and other structures by photo-sensitizing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 13, 2023·3 cites·20 claims
2995US10134604B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·10 cites·20 claims
3095US7781799B2Source/drain strained layersTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 24, 2010·26 cites·12 claims
3195US7494884B2SiGe selective growth without a hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Feb 24, 2009·36 cites·20 claims
3295US7052946B2Method for selectively stressing MOSFETs to improve charge carrier mobilityTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 30, 2006·84 cites·36 claims
3394US12046475B2Surface oxidation control of metal gates using capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·2 cites·20 claims
3494US12002865B2Interconnect features with sharp corners and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·2 cites·20 claims
3594US11929329B2Damascene process using cap layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 12, 2024·3 cites·20 claims
3694US11842922B2Method for forming interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·2 cites·20 claims
3794US11726405B2Photoresist for semiconductor fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
3894US11164948B2Field-effect transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 2, 2021·6 cites·20 claims
3994US11107902B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·8 cites·20 claims
4094US10026843B2Fin structure of semiconductor device, manufacturing method thereof, and manufacturing method of active region of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 17, 2018·7 cites·20 claims
4194US9287398B2Transistor strain-inducing schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·12 cites·20 claims
4293US12159787B2Method of manufacturing a semiconductor device and pattern formation methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 3, 2024·2 cites·20 claims
4393US12135501B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·1 cites·20 claims
4493US12002675B2Photoresist layer outgassing preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·2 cites·20 claims
4593US11894435B2Contact plug structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
4693US11742399B2Topology selective and sacrificial silicon nitride layer for generating spacers for a semiconductor device drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·2 cites·20 claims
4793US10312075B2Treatment system and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 4, 2019·6 cites·20 claims
4893US9831345B2FinFET with rounded source/drain profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 28, 2017·13 cites·20 claims
4993US9293581B2FinFET with bottom SiGe layer in source/drainTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 22, 2016·8 cites·20 claims
5093US8946060B2Methods of manufacturing strained semiconductor devices with facetsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 3, 2015·12 cites·20 claims

Showing the top 50 of 455 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →