Inventor · disambiguated record
Tzu-Chin Wu
Also filed as: WU TZU-CHIN
15 granted patents·6 pending applications·33 citations·filing 2012–2024
89Inventor score
Top patents by PatentIndex Score
21 records- 0191US10249706B1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 2, 2019·8 cites·11 claims
- 0287US8937369B2Transistor with non-uniform stress layer with stress concentrated regionsUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jan 20, 2015·7 cites·21 claims
- 0386US10770464B2Semiconductor device including bit line structure of dynamic random access memory (DRAM) and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Sep 8, 2020·5 cites·6 claims
- 0485US10332888B2Memory devices and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 25, 2019·4 cites·18 claims
- 0579US12091454B2Humanized anti-human neurotensin receptor 1 antibodies and their usesDEV CT BIOTECHNOLOGY·Filed 2022·Granted Sep 17, 2024·1 cites·19 claims
- 0679US10672864B2Manufacturing method of semiconductor memory deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 2, 2020·2 cites·9 claims
- 0778US10446559B2Method of fabricating DRAMUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 15, 2019·2 cites·6 claims
- 0878US10276650B2Semiconductor memory device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 30, 2019·2 cites·10 claims
- 0974US2024332086A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1074US2024332087A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1171US10262895B2Method for forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 16, 2019·1 cites·20 claims
- 1268US12040234B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jul 16, 2024·0 cites·8 claims
- 1365US9219151B1Method for manufacturing silicon nitride layer and method for manufacturing semiconductor structure applying the sameUNITED MICROELECTRONICS CORP·Filed 2014·Granted Dec 22, 2015·1 cites·9 claims
- 1463US10790289B2Method of forming a stop layer filling in a space between spacersUNITED MICROELECTRONICS CORP·Filed 2019·Granted Sep 29, 2020·0 cites·8 claims
- 1560US2025391661A1Manufacturing method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1657US10468417B2Semiconductor structure with a conductive line and fabricating method of a stop layerUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 5, 2019·0 cites·8 claims
- 1755US9343573B2Method of fabrication transistor with non-uniform stress layer with stress concentrated regionsUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 17, 2016·0 cites·12 claims
- 1848US10312080B2Method for forming amorphous silicon multuple layer structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 4, 2019·0 cites·13 claims
- 1944US2015206803A1Method of forming inter-level dielectric layerUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 2038US2018190662A1Bit line gate structure of dynamic random access memory (dram) and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 2135US2014042501A1Mos transistor and process thereofCHEN JEI-MING·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →