Inventor · disambiguated record
Tzu-Shih Yen
Also filed as: YEN TZU-SHIH
24 granted patents·2 pending applications·964 citations·filing 1996–2014
97Inventor score
Files withVANGUARD INT SEMICONDUCT CORP18TANG DANIEL3ADVANCED ION BEAM TECH INC2APPLIED INTELLECTUAL PROPERTIE1APPLIED INTELLECTUAL PROPERTY1
Top patents by PatentIndex Score
26 records- 0194US8685825B2Replacement source/drain finFET fabricationTANG DANIEL·Filed 2011·Granted Apr 1, 2014·22 cites·19 claims
- 0294US5895740AMethod of forming contact holes of reduced dimensions by using in-situ formed polymeric sidewall spacersVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Apr 20, 1999·176 cites·20 claims
- 0394US5688713AMethod of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacersVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Nov 18, 1997·194 cites·20 claims
- 0492US6037216AMethod for simultaneously fabricating capacitor structures, for giga-bit DRAM cells, and peripheral interconnect structures, using a dual damascene processVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Mar 14, 2000·95 cites·24 claims
- 0592US5780338AMethod for manufacturing crown-shaped capacitors for dynamic random access memory integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jul 14, 1998·118 cites·32 claims
- 0690US8871584B2Replacement source/drain finFET fabricationTANG DANIEL·Filed 2012·Granted Oct 28, 2014·12 cites·18 claims
- 0789US9209278B2Replacement source/drain finFET fabricationADVANCED ION BEAM TECH INC·Filed 2014·Granted Dec 8, 2015·8 cites·20 claims
- 0883US5904154AMethod for removing fluorinated photoresist layers from semiconductor substratesVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted May 18, 1999·82 cites·18 claims
- 0980US9159810B2Doping a non-planar semiconductor deviceTANG DANIEL·Filed 2012·Granted Oct 13, 2015·5 cites·26 claims
- 1080US6376384B1Multiple etch contact etching method incorporating post contact etch etchingVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Apr 23, 2002·27 cites·22 claims
- 1178US9006065B2Plasma doping a non-planar semiconductor deviceADVANCED ION BEAM TECH INC·Filed 2012·Granted Apr 14, 2015·4 cites·23 claims
- 1271US6306759B1Method for forming self-aligned contact with linerVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Oct 23, 2001·19 cites·17 claims
- 1370US5962195AMethod for controlling linewidth by etching bottom anti-reflective coatingVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Oct 5, 1999·38 cites·18 claims
- 1468US7457154B2High density memory array systemAPPLIED INTELLECTUAL PROPERTIE·Filed 2006·Granted Nov 25, 2008·4 cites·33 claims
- 1567US6124192AMethod for fabricating ultra-small interconnections using simplified patterns and sidewall contact plugsVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Sep 26, 2000·35 cites·21 claims
- 1663US6235621B1Method for forming a semiconductor deviceVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted May 22, 2001·30 cites·8 claims
- 1757US6278189B1High density integrated circuits using tapered and self-aligned contactsVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Aug 21, 2001·18 cites·5 claims
- 1857US6265296B1Method for forming self-aligned contacts using a hard maskVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jul 24, 2001·22 cites·5 claims
- 1955US6140240AMethod for eliminating CMP induced microscratchesVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Oct 31, 2000·19 cites·17 claims
- 2047US5994228AMethod of fabricating contact holes in high density integrated circuits using taper contact and self-aligned etching processesVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Nov 30, 1999·12 cites·20 claims
- 2142US6136661AMethod to fabricate capacitor structures with very narrow features using silyated photoresistVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Oct 24, 2000·9 cites·20 claims
- 2240US2008123430A1Non-volatile memory unit and arrayAPPLIED INTELLECTUAL PROPERTY·Filed 2006·Application pending·0 cites
- 2339US2009027942A1Semiconductor memory unit and arrayAPPLIED INTERLLECTUAL PROPERTI·Filed 2008·Application pending·0 cites
- 2438US5899747AMethod for forming a tapered spacerVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted May 4, 1999·7 cites·15 claims
- 2534US6423646B1Method for removing etch-induced polymer film and damaged silicon layer from a silicon surfaceVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jul 23, 2002·6 cites·11 claims
- 2630US5990018AOxide etching process using nitrogen plasmaVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Nov 23, 1999·2 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →