Inventor · disambiguated record
Uwe Wahl
Also filed as: WAHL UWE
44 granted patents·8 pending applications·286 citations·filing 1999–2019
97Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA14INFINEON TECHNOLOGIES AG11INFINEON TECHNOLOGIES AUSTRIA AG7WAHL UWE6HIRLER FRANZ3
Top patents by PatentIndex Score
52 records- 0192US7777278B2Lateral semiconductor component with a drift zone having at least one field electrodeINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 17, 2010·22 cites·20 claims
- 0290US8866221B2Super junction semiconductor device comprising a cell area and an edge areaHIRLER FRANZ·Filed 2012·Granted Oct 21, 2014·12 cites·26 claims
- 0390US6462376B1Power MOS element and method for producing the sameFRAUNHOFER GES FORSCHUNG·Filed 1999·Granted Oct 8, 2002·96 cites·24 claims
- 0487US9306064B2Semiconductor device and integrated apparatus comprising the sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 5, 2016·8 cites·16 claims
- 0585US9099454B2Molded semiconductor package with backside die metallizationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 4, 2015·8 cites·22 claims
- 0685US8614616B2Semiconductor device and method of manufacture thereofWILLKOFER STEFAN·Filed 2011·Granted Dec 24, 2013·10 cites·14 claims
- 0784US9431379B2Signal transmission arrangementINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 30, 2016·4 cites·23 claims
- 0884US8970000B2Signal transmission arrangementKERBER MARTIN·Filed 2010·Granted Mar 3, 2015·7 cites·34 claims
- 0983US8975136B2Manufacturing a super junction semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 10, 2015·4 cites·16 claims
- 1083US8674800B2Semiconductor device and method of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2013·Granted Mar 18, 2014·5 cites·23 claims
- 1181US7872300B2Power semiconductor component with plate capacitor structureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jan 18, 2011·7 cites·6 claims
- 1280US9349792B2Super junction semiconductor device having columnar super junction regionsINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 24, 2016·2 cites·14 claims
- 1380US9029944B2Super junction semiconductor device comprising implanted zonesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 12, 2015·5 cites·16 claims
- 1479US8319573B2Signal transmission arrangementKANSCHAT PETER·Filed 2009·Granted Nov 27, 2012·10 cites·27 claims
- 1576US9269654B2Semiconductor device and method of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 23, 2016·3 cites·22 claims
- 1676US9219149B2Semiconductor device with vertical transistor channels and a compensation structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2013·Granted Dec 22, 2015·4 cites·18 claims
- 1775US9087707B2Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor bodyMAUDER ANTON·Filed 2012·Granted Jul 21, 2015·3 cites·19 claims
- 1873US10490656B2Charge-compensation semiconductor device and a manufacturing method thereforINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Nov 26, 2019·1 cites·20 claims
- 1973US7791139B2Integrated circuit including a semiconductor assembly in thin-SOI technologyINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Sep 7, 2010·5 cites·30 claims
- 2071US8410575B2High voltage semiconductor devices and methods of forming the sameKERBER MARTIN·Filed 2010·Granted Apr 2, 2013·3 cites·34 claims
- 2171US6693011B2Power MOS element and method for producing the sameFRAUNHOFER GES FORSCHUNG·Filed 2002·Granted Feb 17, 2004·17 cites·18 claims
- 2270US8278730B2High voltage resistance coupling structureWAHL UWE·Filed 2009·Granted Oct 2, 2012·4 cites·8 claims
- 2369US9318549B2Semiconductor device with a super junction structure having a vertical impurity distributionINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Apr 19, 2016·2 cites·26 claims
- 2468US6940126B2Field-effect-controllable semiconductor component and method for producing the semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 6, 2005·13 cites·18 claims
- 2567US8901623B2Super junction semiconductor device with overcompensation zonesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 2, 2014·1 cites·11 claims
- 2666US7332788B2Semiconductor power device with charge compensation structure and monolithic integrated circuit, and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 19, 2008·14 cites·10 claims
- 2765US9490250B2Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Nov 8, 2016·1 cites·8 claims
- 2864US8431988B2Lateral trench transistor, as well as a method for its productionHIRLER FRANZ·Filed 2005·Granted Apr 30, 2013·1 cites·7 claims
- 2961US7821064B2Lateral MISFET and method for fabricating itINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Oct 26, 2010·2 cites·14 claims
- 3058US9711621B2Trench transistor having a doped semiconductor regionINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 18, 2017·0 cites·15 claims
- 3158US9012280B2Method of manufacturing a super junction semiconductor device with overcompensation zonesINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 21, 2015·0 cites·15 claims
- 3258US7710215B2Semiconductor configuration having an integrated coupler and method for manufacturing such a semiconductor configurationINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 4, 2010·1 cites·24 claims
- 3356US8815686B2Lateral trench transistor, as well as a method for its productionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 26, 2014·0 cites·19 claims
- 3455US9722020B2Super junction semiconductor device having columnar super junction regions extending into a drift layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 1, 2017·0 cites·13 claims
- 3555US7126186B2Compensation component and process for producing the componentINFINEON TECHNOLGIES AG·Filed 2002·Granted Oct 24, 2006·7 cites·5 claims
- 3652US9825127B2Super junction semiconductor device with field extension zonesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Nov 21, 2017·0 cites·21 claims
- 3751US10971620B2Method for producing a semiconductor arrangementINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted Apr 6, 2021·0 cites·38 claims
- 3851US7038272B2Method for forming a channel zone of a transistor and NMOS transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 2, 2006·4 cites·5 claims
- 3950US8790985B2High voltage resistance coupling structureWAHL UWE·Filed 2012·Granted Jul 29, 2014·0 cites·12 claims
- 4049US2016300905A1Semiconductor Device Including a Superjunction Structure with Drift Regions and Compensation StructuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 4148US9741601B2Semiconductor component with regions electrically insulated from one another and method for making a semiconductor componentFELDTKELLER MARTIN·Filed 2009·Granted Aug 22, 2017·0 cites·15 claims
- 4248US8754468B2Power semiconductor component with plate capacitor structure having an edge plate electrically connected to source or drain potentialWAHL UWE·Filed 2010·Granted Jun 17, 2014·0 cites·15 claims
- 4348US8258573B2Power semiconductor component with plate capacitor structure and edge terminationWAHL UWE·Filed 2010·Granted Sep 4, 2012·0 cites·12 claims
- 4445US2016112041A1Power transistor modelINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Application pending·0 cites
- 4545US2013307058A1Semiconductor Devices Including Superjunction Structure and Method of ManufacturingWAHL UWE·Filed 2012·Application pending·0 cites
- 4643US2015115358A1Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Application pending·0 cites
- 4742US2013087921A1Semiconductor Arrangement for Galvanically Isolated Signal Transmission and Method for Producing Such an ArrangementINFINEON TECHNOLOGIES AG·Filed 2012·Application pending·0 cites
- 4841US2014231928A1Super Junction Semiconductor Device with an Edge Area Having a Reverse Blocking CapabilityINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Application pending·0 cites
- 4940US9748116B2Electronic device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 29, 2017·0 cites·7 claims
- 5039US7554157B2Lateral SOI component having a reduced on resistanceINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jun 30, 2009·0 cites·20 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Uwe Wahl files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →