Inventor · disambiguated record
Uzma Rana
Also filed as: RANA UZMA · RANA UZMA B
21 granted patents·5 pending applications·57 citations·filing 2012–2023
91Inventor score
Top patents by PatentIndex Score
26 records- 0197US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 0296US11322387B1Bulk wafer switch isolationGLOBALFOUNDRIES US INC·Filed 2020·Granted May 3, 2022·4 cites·18 claims
- 0389US11380759B2Transistor with embedded isolation layer in bulk substrateGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 5, 2022·2 cites·20 claims
- 0486US9418846B1Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2015·Granted Aug 16, 2016·4 cites·16 claims
- 0584US12142686B2Field effect transistorGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 12, 2024·1 cites·18 claims
- 0680US9407066B2III-V lasers with integrated silicon photonic circuitsGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 2, 2016·3 cites·13 claims
- 0778US9679775B2Selective dopant junction for a group III-V semiconductor deviceIBM·Filed 2016·Granted Jun 13, 2017·2 cites·10 claims
- 0872US12336285B2Field effect transistor with shallow trench isolation features within source/drain regionsGLOBALFOUNDRIES US INC·Filed 2023·Granted Jun 17, 2025·0 cites·16 claims
- 0971US11749717B2Transistor with embedded isolation layer in bulk substrateGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 5, 2023·0 cites·20 claims
- 1070US11823948B2Bulk wafer switch isolationGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 21, 2023·0 cites·18 claims
- 1167US11764225B2Field effect transistor with shallow trench isolation features within source/drain regionsGLOBALFOUNDRIES US INC·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 1267US9287115B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2014·Granted Mar 15, 2016·1 cites·20 claims
- 1360US12119352B2IC structure including porous semiconductor layer in bulk substrate adjacent trench isolationGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 15, 2024·0 cites·15 claims
- 1459US11677000B2IC structure including porous semiconductor layer under trench isolations adjacent source/drain regionsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jun 13, 2023·0 cites·14 claims
- 1558US12027582B2IC structure including porous semiconductor layer under trench isolationGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 2, 2024·0 cites·20 claims
- 1658US9966735B2III-V lasers with integrated silicon photonic circuitsGLOBALFOUNDRIES INC·Filed 2016·Granted May 8, 2018·0 cites·20 claims
- 1758US2024429277A1Multiple gate dielectrics for monolithic stacked devicesIBM·Filed 2023·Application pending·0 cites
- 1857US11817479B2Transistor with air gap under raised source/drain region in bulk semiconductor substrateGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
- 1954US2015048423A1Semiconductor device having a iii-v crystalline compound material selectively grown on the bottom of a space formed in a single element substrate.IBM·Filed 2013·Application pending·0 cites
- 2054US2015048422A1A method for forming a crystalline compound iii-v material on a single element substrateIBM·Filed 2013·Application pending·0 cites
- 2153US9882021B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2016·Granted Jan 30, 2018·0 cites·13 claims
- 2252US11605710B2Transistor with air gap under source/drain region in bulk semiconductor substrateGLOBALFOUNDRIES US INC·Filed 2021·Granted Mar 14, 2023·0 cites·10 claims
- 2352US11488950B2Integrated circuit structure and method for bipolar transistor stack within substrateGLOBALFOUNDRIES US INC·Filed 2021·Granted Nov 1, 2022·0 cites·12 claims
- 2449US2015255281A1Silicon substrate preparation for selective iii-v epitaxyIBM·Filed 2015·Application pending·0 cites
- 2548US2014264607A1Iii-v finfets on silicon substrateIBM·Filed 2013·Application pending·0 cites
- 2639US9105571B2Interface engineering to optimize metal-III-V contactsLAVOIE CHRISTIAN·Filed 2012·Granted Aug 11, 2015·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →