Inventor · disambiguated record
Van H. Le
Also filed as: LE VAN · LE VAN H · LE VAN HOANG
252 granted patents·60 pending applications·743 citations·filing 2010–2025
99Inventor score
Top patents by PatentIndex Score
312 records- 0199US8987794B2Non-planar gate all-around device and method of fabrication thereofRACHMADY WILLY·Filed 2011·Granted Mar 24, 2015·65 cites·29 claims
- 0298US9123567B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureRADOSAVLJEVIC MARKO·Filed 2011·Granted Sep 1, 2015·66 cites·26 claims
- 0397US10763349B2Quantum dot devices with modulation doped stacksINTEL CORP·Filed 2016·Granted Sep 1, 2020·18 cites·25 claims
- 0497US8765563B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2012·Granted Jul 1, 2014·42 cites·9 claims
- 0597US8748940B1Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2012·Granted Jun 10, 2014·35 cites·20 claims
- 0696US12057402B2Direct bonding in microelectronic assembliesINTEL CORP·Filed 2020·Granted Aug 6, 2024·3 cites·20 claims
- 0796US11862730B2Top-gate doped thin film transistorINTEL CORP·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0896US11843058B2Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structuresINTEL CORP·Filed 2021·Granted Dec 12, 2023·3 cites·18 claims
- 0996US10038054B2Variable gate width for gate all-around transistorsINTEL CORP·Filed 2017·Granted Jul 31, 2018·14 cites·15 claims
- 1096US9472613B2Conversion of strain-inducing buffer to electrical insulatorINTEL CORP·Filed 2015·Granted Oct 18, 2016·13 cites·20 claims
- 1196US9123790B2Contact techniques and configurations for reducing parasitic resistance in nanowire transistorsPILLARISETTY RAVI·Filed 2011·Granted Sep 1, 2015·24 cites·12 claims
- 1296US8575653B2Non-planar quantum well device having interfacial layer and method of forming sameRACHMADY WILLY·Filed 2010·Granted Nov 5, 2013·21 cites·30 claims
- 1395US11764306B2Multi-layer crystalline back gated thin film transistorINTEL CORP·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
- 1495US11171243B2Transistor structures with a metal oxide contact bufferINTEL CORP·Filed 2019·Granted Nov 9, 2021·11 cites·14 claims
- 1595US9634007B2Trench confined epitaxially grown device layer(s)PILLARISETTY RAVI·Filed 2014·Granted Apr 25, 2017·16 cites·5 claims
- 1695US9590089B2Variable gate width for gate all-around transistorsRACHMADY WILLY·Filed 2011·Granted Mar 7, 2017·18 cites·16 claims
- 1795US9337291B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2015·Granted May 10, 2016·9 cites·7 claims
- 1894US12148734B2Transistors, memory cells, and arrangements thereofINTEL CORP·Filed 2020·Granted Nov 19, 2024·3 cites·20 claims
- 1994US10418487B2Non-planar gate all-around device and method of fabrication thereofINTEL CORP·Filed 2015·Granted Sep 17, 2019·9 cites·16 claims
- 2094US9306068B2Stain compensation in transistorsINTEL CORP·Filed 2015·Granted Apr 5, 2016·7 cites·20 claims
- 2193US11362215B2Top-gate doped thin film transistorINTEL CORP·Filed 2018·Granted Jun 14, 2022·6 cites·21 claims
- 2293US10249740B2Ge nano wire transistor with GaAs as the sacrificial layerINTEL CORP·Filed 2015·Granted Apr 2, 2019·7 cites·18 claims
- 2393US9570614B2Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxationINTEL CORP·Filed 2013·Granted Feb 14, 2017·14 cites·8 claims
- 2493US9129827B2Conversion of strain-inducing buffer to electrical insulatorCAPPELLANI ANNALISA·Filed 2012·Granted Sep 8, 2015·12 cites·25 claims
- 2592US12381193B2Integrated circuit assembliesINTEL CORP·Filed 2021·Granted Aug 5, 2025·2 cites·26 claims
- 2692US12238913B2Two transistor memory cell using stacked thin-film transistorsINTEL CORP·Filed 2023·Granted Feb 25, 2025·1 cites·26 claims
- 2792US11264512B2Thin film transistors having U-shaped featuresINTEL CORP·Filed 2018·Granted Mar 1, 2022·6 cites·20 claims
- 2892US10026845B2Deep gate-all-around semiconductor device having germanium or group III-V active layerINTEL CORP·Filed 2017·Granted Jul 17, 2018·5 cites·25 claims
- 2992US9666492B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2015·Granted May 30, 2017·6 cites·17 claims
- 3092US9136343B2Deep gate-all-around semiconductor device having germanium or group III-V active layerPILLARISETTY RAVI·Filed 2013·Granted Sep 15, 2015·9 cites·25 claims
- 3192US9029835B2Epitaxial film on nanoscale structureINTEL CORP·Filed 2012·Granted May 12, 2015·13 cites·19 claims
- 3291US12245523B2Quantum dot devices with finsINTEL CORP·Filed 2023·Granted Mar 4, 2025·1 cites·22 claims
- 3391US10964701B2Vertical shared gate thin-film transistor-based charge storage memoryINTEL CORP·Filed 2017·Granted Mar 30, 2021·6 cites·15 claims
- 3491US9691843B2Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or compositionINTEL CORP·Filed 2016·Granted Jun 27, 2017·7 cites·11 claims
- 3591US8785907B2Epitaxial film growth on patterned substrateGOEL NITI·Filed 2012·Granted Jul 22, 2014·13 cites·24 claims
- 3690US11289490B2Vertical 1T-1C DRAM arrayINTEL CORP·Filed 2017·Granted Mar 29, 2022·5 cites·11 claims
- 3790US11094672B2Composite IC chips including a chiplet embedded within metallization layers of a host IC chipINTEL CORP·Filed 2019·Granted Aug 17, 2021·5 cites·20 claims
- 3890US10847656B2Fabrication of non-planar IGZO devices for improved electrostaticsINTEL CORP·Filed 2015·Granted Nov 24, 2020·6 cites·18 claims
- 3990US10186580B2Semiconductor device having germanium active layer with underlying diffusion barrier layerINTEL CORP·Filed 2017·Granted Jan 22, 2019·5 cites·25 claims
- 4090US10096709B2Aspect ratio trapping (ART) for fabricating vertical semiconductor devicesINTEL CORP·Filed 2014·Granted Oct 9, 2018·7 cites·25 claims
- 4190US8872225B2Defect transferred and lattice mismatched epitaxial filmINTEL CORP·Filed 2012·Granted Oct 28, 2014·12 cites·25 claims
- 4289US11320883B2Multi-die stacks with power managementINTEL CORP·Filed 2018·Granted May 3, 2022·6 cites·27 claims
- 4389US11139296B2CMOS circuit with vertically oriented n-type transistor and method of providing sameINTEL CORP·Filed 2018·Granted Oct 5, 2021·5 cites·22 claims
- 4489US10784170B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2019·Granted Sep 22, 2020·3 cites·14 claims
- 4589US10763347B2Quantum well stacks for quantum dot devicesINTEL CORP·Filed 2016·Granted Sep 1, 2020·6 cites·20 claims
- 4688US11417770B2Vertical thin-film transistors between metal layersINTEL CORP·Filed 2018·Granted Aug 16, 2022·5 cites·25 claims
- 4788US11004982B2Gate for a transistorINTEL CORP·Filed 2017·Granted May 11, 2021·5 cites·20 claims
- 4888US10319646B2CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architectureINTEL CORP·Filed 2017·Granted Jun 11, 2019·3 cites·18 claims
- 4988US9391181B2Lattice mismatched hetero-epitaxial filmINTEL CORP·Filed 2012·Granted Jul 12, 2016·10 cites·14 claims
- 5087US11138499B2Applications of back-end-of-line (BEOL) capacitors in compute-in-memory (CIM) circuitsINTEL CORP·Filed 2018·Granted Oct 5, 2021·5 cites·19 claims
Showing the top 50 of 312 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →