Inventor · disambiguated record
Vasyl Motsnyi
Also filed as: MOTSNYI VASYL
2 granted patents·2 pending applications·0 citations·filing 2014–2020
25Inventor score
Technology areasH10P
Files withIMEC VZW4
Top patents by PatentIndex Score
4 records- 0145US11282702B2Method of forming a semiconductor device structureIMEC VZW·Filed 2020·Granted Mar 22, 2022·0 cites·11 claims
- 0245US2015162212A1Method for Fabricating CMOS Compatible Contact Layers in Semiconductor DevicesIMEC VZW·Filed 2014·Application pending·0 cites
- 0343US9698309B2Method for fabricating CMOS compatible contact layers in semiconductor devicesIMEC VZW·Filed 2016·Granted Jul 4, 2017·0 cites·6 claims
- 0437US2015115277A1Episubstrates for Selective Area Growth of Group III-V Material and a Method for Fabricating a Group III-V Material on a Silicon SubstrateIMEC VZW·Filed 2014·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Vasyl Motsnyi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →