Inventor · disambiguated record
Valeria Puglisi
Also filed as: PUGLISI VALERIA
1 granted patent·7 pending applications·19 citations·filing 2012–2025
39Inventor score
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8 records- 0180US9024357B2Method for manufacturing a HEMT transistor and corresponding HEMT transistorPUGLISI VALERIA·Filed 2012·Granted May 5, 2015·19 cites·20 claims
- 0256US2025107121A1Forming a schottky contact in an electronic device, such as a jbs or mps diode, and electronic device with schottky contactST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0352US2024178092A1Sic-based electronic device with multilayer and multifunctional passivation, and method of manufacturing the electronic deviceST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 0451US2025393273A1ELECTRONIC DEVICE BASED ON SiC HAVING IMPROVED ELECTRICAL PERFORMANCES AND MANUFACTURING METHODST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 0550US2024429286A1Front side ohmic contact formation for sic deviceST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 0649US2025015145A1Method for creating an ohmic contact on a high-power electrical diodeST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 0747US2023170390A1Sic-based electronic device with enhanced robustness, and method for manufacturing the electronic deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 0847US2023170271A1Method of manufacturing an anchoring element of a sic-based electronic device, anchoring element, and electronic deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →