Inventor · disambiguated record
Valentin Todorov
Also filed as: TODOROV VALENTIN · TODOROV VALENTIN N
16 granted patents·3 pending applications·905 citations·filing 1996–2007
96Inventor score
Top patents by PatentIndex Score
19 records- 0197US7718538B2Pulsed-plasma system with pulsed sample bias for etching semiconductor substratesAPPLIED MATERIALS INC·Filed 2007·Granted May 18, 2010·109 cites·9 claims
- 0297US6617794B2Method for controlling etch uniformityAPPLIED MATERIALS INC·Filed 2001·Granted Sep 9, 2003·87 cites·31 claims
- 0397US6507155B1Inductively coupled plasma source with controllable power depositionAPPLIED MATERIALS INC·Filed 2000·Granted Jan 14, 2003·106 cites·61 claims
- 0496US6447636B1Plasma reactor with dynamic RF inductive and capacitive coupling controlAPPLIED MATERIALS INC·Filed 2000·Granted Sep 10, 2002·215 cites·43 claims
- 0595US6962644B2Tandem etch chamber plasma processing systemAPPLIED MATERIALS INC·Filed 2002·Granted Nov 8, 2005·108 cites·35 claims
- 0694US6706138B2Adjustable dual frequency voltage dividing plasma reactorAPPLIED MATERIALS INC·Filed 2001·Granted Mar 16, 2004·56 cites·12 claims
- 0792US7674394B2Plasma process for inductively coupling power through a gas distribution plate while adjusting plasma distributionAPPLIED MATERIALS INC·Filed 2007·Granted Mar 9, 2010·17 cites·21 claims
- 0886US7777152B2High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuckAPPLIED MATERIALS INC·Filed 2007·Granted Aug 17, 2010·26 cites·15 claims
- 0984US7552736B2Process for wafer backside polymer removal with a ring of plasma under the waferAPPLIED MATERIALS INC·Filed 2007·Granted Jun 30, 2009·9 cites·10 claims
- 1084US6660127B2Apparatus for plasma etching at a constant etch rateAPPLIED MATERIALS INC·Filed 2002·Granted Dec 9, 2003·26 cites·5 claims
- 1184US6447637B1Process chamber having a voltage distribution electrodeAPPLIED MATERIALS INC·Filed 2000·Granted Sep 10, 2002·22 cites·12 claims
- 1281US7678710B2Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma systemAPPLIED MATERIALS INC·Filed 2006·Granted Mar 16, 2010·7 cites·37 claims
- 1380US5801386AApparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using sameAPPLIED MATERIALS INC·Filed 1996·Granted Sep 1, 1998·36 cites·25 claims
- 1472US6399507B1Stable plasma process for etching of filmsAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·34 cites·23 claims
- 1568US6356097B1Capacitive probe for in situ measurement of wafer DC bias voltageAPPLIED MATERIALS INC·Filed 1999·Granted Mar 12, 2002·33 cites·32 claims
- 1649US5942889ACapacitive probe for in situ measurement of wafer DC bias voltageAPPLIED MATERIALS INC·Filed 1997·Granted Aug 24, 1999·14 cites·14 claims
- 1749US2008230008A1Plasma species and uniformity control through pulsed vhf operationPATERSON ALEXANDER·Filed 2007·Application pending·0 cites
- 1840US2003006009A1Process chamber having a voltage distribution electrodeAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 1934US2002100557A1ICP window heater integrated with faraday shield or floating electrode between the source power coil and the ICP windowAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →