Inventor · disambiguated record
Valeri F. Tsvetkov
Also filed as: TSVETKOV VALERI · TSVETKOV VALERI F · TSVETKOV VALERI FEDOROVICH
39 granted patents·4 pending applications·1,235 citations·filing 1996–2024
98Inventor score
Top patents by PatentIndex Score
43 records- 0198US11519098B2Dislocation distribution for silicon carbide crystalline materialsWOLFSPEED INC·Filed 2020·Granted Dec 6, 2022·9 cites·46 claims
- 0298US8785946B2Low 1C screw dislocation 3 inch silicon carbide waferCREE INC·Filed 2013·Granted Jul 22, 2014·13 cites·21 claims
- 0398US6218680B1Semi-insulating silicon carbide without vanadium dominationCREE INC·Filed 1999·Granted Apr 17, 2001·349 cites·36 claims
- 0497US8384090B2Low 1C screw dislocation 3 inch silicon carbide waferCREE INC·Filed 2007·Granted Feb 26, 2013·24 cites·16 claims
- 0597US6403982B2Semi-insulating silicon carbide without vanadium dominationCREE INC·Filed 2001·Granted Jun 11, 2002·71 cites·14 claims
- 0696US6639247B2Semi-insulating silicon carbide without vanadium dominationCREE INC·Filed 2001·Granted Oct 28, 2003·51 cites·5 claims
- 0795US9790619B2Method of producing high quality silicon carbide crystal in a seeded growth systemLEONARD ROBERT TYLER·Filed 2011·Granted Oct 17, 2017·25 cites·10 claims
- 0895US9200381B2Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interfaceLEONARD ROBERT TYLER·Filed 2005·Granted Dec 1, 2015·28 cites·40 claims
- 0995US7351286B2One hundred millimeter single crystal silicon carbide waferCREE INC·Filed 2005·Granted Apr 1, 2008·20 cites·6 claims
- 1095US7323051B2One hundred millimeter single crystal silicon carbide waferCREE INC·Filed 2005·Granted Jan 29, 2008·30 cites·27 claims
- 1195US7316747B2Seeded single crystal silicon carbide growth and resulting crystalsCREE INC·Filed 2005·Granted Jan 8, 2008·34 cites·68 claims
- 1295US6200917B1Colorless silicon carbide gemstonesCREE INC·Filed 2000·Granted Mar 13, 2001·48 cites·5 claims
- 1395US5718760AGrowth of colorless silicon carbide crystalsCREE RESEARCH INC·Filed 1996·Granted Feb 17, 1998·113 cites·11 claims
- 1494US12054850B2Large diameter silicon carbide wafersWOLFSPEED INC·Filed 2020·Granted Aug 6, 2024·5 cites·33 claims
- 1594US8147991B2One hundred millimeter single crystal silicon carbide waferJENNY JASON RONALD·Filed 2010·Granted Apr 3, 2012·16 cites·25 claims
- 1694US7314520B2Low 1c screw dislocation 3 inch silicon carbide waferCREE INC·Filed 2004·Granted Jan 1, 2008·51 cites·35 claims
- 1794US7294324B2Low basal plane dislocation bulk grown SiC wafersCREE INC·Filed 2005·Granted Nov 13, 2007·26 cites·15 claims
- 1892US6396080B2Semi-insulating silicon carbide without vanadium dominationCREE INC·Filed 2001·Granted May 28, 2002·69 cites·25 claims
- 1990US7387680B2Method and apparatus for the production of silicon carbide crystalsCREE INC·Filed 2005·Granted Jun 17, 2008·9 cites·24 claims
- 2087US12125701B2Large dimension silicon carbide single crystalline materials with reduced crystallographic stressWOLFSPEED INC·Filed 2020·Granted Oct 22, 2024·2 cites·10 claims
- 2186US6025289AColorless silicon carbide crystalsCREE RESEARCH INC·Filed 1997·Granted Feb 15, 2000·41 cites·10 claims
- 2285US12473661B2Large diameter silicon carbide wafersWOLFSPEED INC·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 2385US12024794B2Reduced optical absorption for silicon carbide crystalline materialsWOLFSPEED INC·Filed 2021·Granted Jul 2, 2024·1 cites·19 claims
- 2485US7943954B2LED fabrication via ion implant isolationCREE INC·Filed 2009·Granted May 17, 2011·9 cites·19 claims
- 2585US7364617B2Seed and seedholder combinations for high quality growth of large silicon carbide single crystalsCREE INC·Filed 2007·Granted Apr 29, 2008·4 cites·16 claims
- 2684US8163086B2Halogen assisted physical vapor transport method for silicon carbide growthMUELLER STEPHAN G·Filed 2007·Granted Apr 24, 2012·6 cites·30 claims
- 2783US7338822B2LED fabrication via ion implant isolationCREE INC·Filed 2004·Granted Mar 4, 2008·33 cites·18 claims
- 2883US7147715B2Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogenCREE INC·Filed 2003·Granted Dec 12, 2006·20 cites·42 claims
- 2982US7300519B2Reduction of subsurface damage in the production of bulk SiC crystalsCREE INC·Filed 2004·Granted Nov 27, 2007·17 cites·28 claims
- 3081US9059118B2Method for producing semi-insulating resistivity in high purity silicon carbide crystalsJENNY JASON RONALD·Filed 2009·Granted Jun 16, 2015·6 cites·5 claims
- 3181US8618553B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCARTER JR CALVIN H·Filed 2010·Granted Dec 31, 2013·2 cites·12 claims
- 3281US6974720B2Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed therebyCREE INC·Filed 2003·Granted Dec 13, 2005·25 cites·13 claims
- 3380US7563321B2Process for producing high quality large size silicon carbide crystalsCREE INC·Filed 2004·Granted Jul 21, 2009·15 cites·23 claims
- 3480US7323052B2Apparatus and method for the production of bulk silicon carbide single crystalsCREE INC·Filed 2005·Granted Jan 29, 2008·11 cites·27 claims
- 3578US7220313B2Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambientCREE INC·Filed 2003·Granted May 22, 2007·15 cites·26 claims
- 3677US2024344239A1Reduced optical absorption for silicon carbide crystalline materialsWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 3773US7592634B2LED fabrication via ion implant isolationCREE INC·Filed 2005·Granted Sep 22, 2009·4 cites·13 claims
- 3873US7192482B2Seed and seedholder combinations for high quality growth of large silicon carbide single crystalsCREE INC·Filed 2004·Granted Mar 20, 2007·24 cites·18 claims
- 3971US2025006491A1Large dimension silicon carbide single crystalline materials with reduced crystallographic stressWOLFSPEED INC·Filed 2024·Application pending·0 cites
- 4065US6964917B2Semi-insulating silicon carbide produced by Neutron transmutation dopingCREE INC·Filed 2003·Granted Nov 15, 2005·9 cites·31 claims
- 4157US2012167825A1Halogen assisted physical vapor transport method for silicon carbide growthMUELLER STEPHAN G·Filed 2012·Application pending·0 cites
- 4255US7811943B2Process for producing silicon carbide crystals having increased minority carrier lifetimesCREE INC·Filed 2005·Granted Oct 12, 2010·0 cites·45 claims
- 4343US2004206298A1Method for producing semi-insulating resistivity in high purity silicon carbide crystalsFiled 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Valeri F. Tsvetkov files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →