Inventor · disambiguated record
Venkatram Venkatasamy
Also filed as: VENKATASAMY VENKATRAM
14 granted patents·3 pending applications·131 citations·filing 2007–2018
90Inventor score
Top patents by PatentIndex Score
17 records- 0196US8097874B2Programmable resistive memory cell with sacrificial metalVENKATASAMY VENKATRAM·Filed 2009·Granted Jan 17, 2012·92 cites·20 claims
- 0287US9305575B2Heat assisted magnetic recording heads having bilayer heat sinksSEAGATE TECHNOLOGY LLC·Filed 2014·Granted Apr 5, 2016·7 cites·15 claims
- 0387US7918984B2Method of electrodepositing germanium compound materials on a substrateIBM·Filed 2007·Granted Apr 5, 2011·5 cites·18 claims
- 0486US8902719B2Heat assisted magnetic recording heads having bilayer heat sinksSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Dec 2, 2014·7 cites·19 claims
- 0584US10100422B2Near field transducers including electrodeposited plasmonic materials and methods of formingSEAGATE TECHNOLOGY LLC·Filed 2013·Granted Oct 16, 2018·2 cites·18 claims
- 0684US7750386B2Memory cells including nanoporous layers containing conductive materialSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Jul 6, 2010·12 cites·21 claims
- 0773US8058646B2Programmable resistive memory cell with oxide layerSUN MING·Filed 2009·Granted Nov 15, 2011·4 cites·17 claims
- 0872US11015256B2Near field transducers including electrodeposited plasmonic materials and methods of formingSEAGATE TECHNOLOGY LLC·Filed 2018·Granted May 25, 2021·0 cites·9 claims
- 0969US7842938B2Programmable metallization cells and methods of forming the sameSEAGATE TECHNOLOGY LLC·Filed 2008·Granted Nov 30, 2010·2 cites·9 claims
- 1057US8343801B2Method of forming a programmable metallization memory cellSEAGATE TECHNOLOGY LLC·Filed 2011·Granted Jan 1, 2013·0 cites·18 claims
- 1157US2013228734A1Programmable resistive memory cell with sacrificial metalSEAGATE TECHNOLOGY LLC·Filed 2013·Application pending·0 cites
- 1256US8288753B2Programmable resistive memory cell with oxide layerSUN MING·Filed 2011·Granted Oct 16, 2012·0 cites·14 claims
- 1355US8435827B2Programmable resistive memory cell with sacrificial metalVENKATASAMY VENKATRAM·Filed 2012·Granted May 7, 2013·0 cites·6 claims
- 1453US2009011577A1Method of making phase change materials electrochemical atomic layer depositionIBM CORP YORKTOWN·Filed 2007·Application pending·0 cites
- 1552US8293571B2Programmable metallization cells and methods of forming the sameVENKATASAMY VENKATRAM·Filed 2010·Granted Oct 23, 2012·0 cites·8 claims
- 1650US8940577B2Programmable metallization cells and methods of forming the sameVENKATASAMY VENKATRAM·Filed 2012·Granted Jan 27, 2015·0 cites·15 claims
- 1742US2012080317A1ELECTRODEPOSITION OF CoNiP FILMSVENKATASAMY VENKATRAM·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →