Inventor · disambiguated record
Vinh Diep
Also filed as: DIEP VINH Q · DIEP VINH QUANG · DIEP Vinh
30 granted patents·4 pending applications·233 citations·filing 2015–2025
96Inventor score
Files withSANDISK TECHNOLOGIES LLC19MICRON TECHNOLOGY INC11PURDUE RESEARCH FOUNDATION3SANDISK TECHNOLOGIES INC1
Top patents by PatentIndex Score
34 records- 0198US10923197B2Memory device with compensation for erase speed variations due to blocking oxide layer thinningSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 16, 2021·8 cites·20 claims
- 0297US10008271B1Programming of dummy memory cell to reduce charge loss in select gate transistorSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·44 cites·11 claims
- 0396US10510413B1Multi-pass programming with modified pass voltages to tighten threshold voltage distributionsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 17, 2019·25 cites·19 claims
- 0495US9922705B1Reducing select gate injection disturb at the beginning of an erase operationSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 20, 2018·23 cites·20 claims
- 0593US11037640B2Multi-pass programming process for memory device which omits verify test in first program passSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 15, 2021·3 cites·20 claims
- 0692US10741253B1Memory device with compensation for erase speed variations due to blocking oxide layer thinningSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Aug 11, 2020·10 cites·19 claims
- 0792US10566059B2Three dimensional NAND memory device with drain select gate electrode shared between multiple stringsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 18, 2020·13 cites·15 claims
- 0892US10276248B1Early ramp down of dummy word line voltage during read to suppress select gate transistor downshiftSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 30, 2019·13 cites·20 claims
- 0992US9864950B2Compact implementation of neuron and synapse with spin switchesPURDUE RESEARCH FOUNDATION·Filed 2015·Granted Jan 9, 2018·20 cites·20 claims
- 1092US9830963B1Word line-dependent and temperature-dependent erase depthSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 28, 2017·14 cites·19 claims
- 1191US10665301B1Memory device with compensation for program speed variations due to block oxide thinningSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·8 cites·10 claims
- 1291US10516098B2Apparatus for spin injection enhancement and method of making the samePURDUE RESEARCH FOUNDATION·Filed 2017·Granted Dec 24, 2019·6 cites·10 claims
- 1390US10811109B2Multi-pass programming process for memory device which omits verify test in first program passSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 20, 2020·8 cites·16 claims
- 1490US10446244B1Adjusting voltage on adjacent word line during verify of memory cells on selected word line in multi-pass programmingSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 15, 2019·10 cites·20 claims
- 1588US9852803B2Dummy word line control scheme for non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2016·Granted Dec 26, 2017·9 cites·18 claims
- 1687US10706941B1Multi-state programming in memory device with loop-dependent bit line voltage during verifySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jul 7, 2020·6 cites·20 claims
- 1781US11508449B2Detrapping electrons to prevent quick charge loss during program verify operations in a memory deviceMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 22, 2022·1 cites·18 claims
- 1879US11417834B2Apparatus for spin injection enhancement and method of making the samePURDUE RESEARCH FOUNDATION·Filed 2019·Granted Aug 16, 2022·1 cites·10 claims
- 1979US10636501B1Memory device with reduced neighbor word line interference using adjustable voltage on source-side unselected word lineSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 28, 2020·4 cites·20 claims
- 2078US10854300B2Multi-state programming in memory device with loop-dependent bit line voltage during verifySANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 1, 2020·1 cites·20 claims
- 2176US2025285681A1Selective increase and decrease to pass voltages for programming a memory deviceMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2274US10482981B2Preventing refresh of voltages of dummy memory cells to reduce threshold voltage downshift for select gate transistorsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 19, 2019·3 cites·22 claims
- 2372US10068651B1Channel pre-charge to suppress disturb of select gate transistors during erase in memorySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Sep 4, 2018·3 cites·19 claims
- 2470US12308074B2Enhanced gradient seeding scheme during a program operation in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 2570US2025166708A1Adaptive sensing time for memory operationsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2669US12237015B2Adaptive sensing time for memory operationsMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 25, 2025·0 cites·20 claims
- 2769US12217801B2Bias voltage schemes during pre-programming and programming phasesMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 4, 2025·0 cites·19 claims
- 2869US11967387B2Detrapping electrons to prevent quick charge loss during program verify operations in a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 23, 2024·0 cites·14 claims
- 2969US2025149094A1Bias voltage schemes during pre-programming and programming phasesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3068US12300322B2Selective increase and decrease to pass voltages for programming a memory deviceMICRON TECHNOLOGY INC·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3166US11024387B2Memory device with compensation for program speed variations due to block oxide thinningSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 3264US10878914B2Memory device with compensation for program speed variations due to block oxide thinningSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Dec 29, 2020·0 cites·20 claims
- 3359US11901010B2Enhanced gradient seeding scheme during a program operation in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 13, 2024·0 cites·20 claims
- 3450US2024249776A1Drain-side wordline voltage boosting to reduce lateral electron field during a programming operationMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Vinh Diep files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →