Inventor · disambiguated record
Vincent M. Donnelly
Also filed as: DONNELLY JR VINCENT M · DONNELLY JR VINCENT MICHAEL · DONNELLY VINCENT M
17 granted patents·1 pending application·678 citations·filing 1981–2018
95Inventor score
Files withBELL TELEPHONE LABOR INC4UNIV HOUSTON3AT & T BELL LAB2TOKYO ELECTRON LTD2UNIV HOUSTON SYSTEM2
Top patents by PatentIndex Score
18 records- 0197US4498953AEtching techniquesAT & T BELL LAB·Filed 1983·Granted Feb 12, 1985·287 cites·22 claims
- 0290US8968588B2Low electron temperature microwave surface-wave plasma (SWP) processing method and apparatusZHAO JIANPING·Filed 2012·Granted Mar 3, 2015·23 cites·13 claims
- 0389US6143658AMultilevel wiring structure and method of fabricating a multilevel wiring structureLUCENT TECHNOLOGIES INC·Filed 1999·Granted Nov 7, 2000·102 cites·6 claims
- 0488US10515782B2Atomic layer etching with pulsed plasmasUNIV HOUSTON SYSTEM·Filed 2018·Granted Dec 24, 2019·4 cites·15 claims
- 0585US7883839B2Method and apparatus for nano-pantographyUNIV HOUSTON·Filed 2006·Granted Feb 8, 2011·6 cites·21 claims
- 0682US6511872B1Device having a high dielectric constant material and a method of manufacture thereofAGERE SYSTEMS INC·Filed 2001·Granted Jan 28, 2003·30 cites·15 claims
- 0782US4377436APlasma-assisted etch process with endpoint detectionBELL TELEPHONE LABOR INC·Filed 1981·Granted Mar 22, 1983·39 cites·24 claims
- 0879US5229303ADevice processing involving an optical interferometric thermometry using the change in refractive index to measure semiconductor wafer temperatureAT & T BELL LAB·Filed 1991·Granted Jul 20, 1993·46 cites·9 claims
- 0975US4394237ASpectroscopic monitoring of gas-solid processesBELL TELEPHONE LABOR INC·Filed 1981·Granted Jul 19, 1983·27 cites·14 claims
- 1074US5467732ADevice processing involving an optical interferometric thermometryAT & T CORP·Filed 1993·Granted Nov 21, 1995·38 cites·16 claims
- 1171US8030620B2System and method for nano-pantographyUNIV HOUSTON·Filed 2009·Granted Oct 4, 2011·1 cites·19 claims
- 1270US7358484B2Hyperthermal neutral beam source and method of operatingTOKYO ELECTRON LTD·Filed 2005·Granted Apr 15, 2008·5 cites·22 claims
- 1368US4359485ARadiation induced deposition of metal on semiconductor surfacesBELL TELEPHONE LABOR INC·Filed 1981·Granted Nov 16, 1982·28 cites·14 claims
- 1461US4397711ACrystallographic etching of III-V semiconductor materialsBELL TELEPHONE LABOR INC·Filed 1982·Granted Aug 9, 1983·23 cites·8 claims
- 1557US7638759B2Hyperthermal neutral beam source and method of operatingTOKYO ELECTRON LTD·Filed 2008·Granted Dec 29, 2009·1 cites·18 claims
- 1652US4645687ADeposition of III-V semiconductor materialsAT & T LAB·Filed 1985·Granted Feb 24, 1987·18 cites·11 claims
- 1746US2011139748A1Atomic layer etching with pulsed plasmasUNIV HOUSTON·Filed 2010·Application pending·0 cites
- 1840US10207469B2Systems and methods for rapidly fabricating nanopatterns in a parallel fashion over large areasUNIV HOUSTON SYSTEM·Filed 2015·Granted Feb 19, 2019·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →