Inventor · disambiguated record
Vidyut Gopal
Also filed as: GOPAL VIDYUT
39 granted patents·8 pending applications·295 citations·filing 2001–2015
97Inventor score
Top patents by PatentIndex Score
47 records- 0195US8883557B1Controlling composition of multiple oxides in resistive switching layers using atomic layer depositionINTERMOLECULAR INC·Filed 2013·Granted Nov 11, 2014·14 cites·20 claims
- 0295US8569104B2Transition metal oxide bilayersPHAM HIEU·Filed 2012·Granted Oct 29, 2013·27 cites·18 claims
- 0395US8288297B1Atomic layer deposition of metal oxide materials for memory applicationsWANG YUN·Filed 2011·Granted Oct 16, 2012·23 cites·20 claims
- 0494US8658511B1Etching resistive switching and electrode layersINTERMOLECULAR INC·Filed 2012·Granted Feb 25, 2014·26 cites·19 claims
- 0592US8735217B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2013·Granted May 27, 2014·4 cites·20 claims
- 0692US7569501B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2006·Granted Aug 4, 2009·17 cites·20 claims
- 0791US8481357B2Thin film solar cell with ceramic handling layerKUMAR ANANDA H·Filed 2010·Granted Jul 9, 2013·6 cites·57 claims
- 0891US7067439B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2002·Granted Jun 27, 2006·48 cites·25 claims
- 0987US8787066B2Method for forming resistive switching memory elements with improved switching behaviorWANG YUN·Filed 2011·Granted Jul 22, 2014·8 cites·20 claims
- 1085US8913418B2Confined defect profiling within resistive random memory access cellsINTERMOLECULAR INC·Filed 2013·Granted Dec 16, 2014·8 cites·18 claims
- 1185US8466446B2Atomic layer deposition of metal oxide materials for memory applicationsWANG YUN·Filed 2012·Granted Jun 18, 2013·5 cites·20 claims
- 1284US9129894B2Embedded nonvolatile memory elements having resistive switching characteristicsHASHIM IMRAN·Filed 2012·Granted Sep 8, 2015·8 cites·20 claims
- 1384US8906736B1Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Dec 9, 2014·1 cites·20 claims
- 1482US9246096B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2015·Granted Jan 26, 2016·3 cites·19 claims
- 1580US8779407B2Multifunctional electrodePHAM HIEU·Filed 2012·Granted Jul 15, 2014·1 cites·19 claims
- 1680US6666979B2Dry etch release of MEMS structuresAPPLIED MATERIALS INC·Filed 2001·Granted Dec 23, 2003·45 cites·28 claims
- 1778US7696094B2Method for improved planarization in semiconductor devicesSPANSION LLC·Filed 2006·Granted Apr 13, 2010·6 cites·17 claims
- 1877US8883655B2Atomic layer deposition of metal oxide materials for memory applicationsINTERMOLECULAR INC·Filed 2013·Granted Nov 11, 2014·2 cites·20 claims
- 1977US8546275B2Atomic layer deposition of hafnium and zirconium oxides for memory applicationsWANG YUN·Filed 2011·Granted Oct 1, 2013·3 cites·20 claims
- 2076US8802492B2Method for forming resistive switching memory elementsTONG JINHONG·Filed 2011·Granted Aug 12, 2014·3 cites·19 claims
- 2176US7972962B2Planarization method using hybrid oxide and polysilicon CMPSPANSION LLC·Filed 2010·Granted Jul 5, 2011·4 cites·20 claims
- 2273US8859328B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Oct 14, 2014·0 cites·20 claims
- 2372US8912518B2Resistive random access memory cells having doped current limiting layersINTERMOLECULAR INC·Filed 2012·Granted Dec 16, 2014·4 cites·20 claims
- 2470US6887732B2Microstructure devices, methods of forming a microstructure device and a method of forming a MEMS deviceAPPLIED MATERIALS INC·Filed 2001·Granted May 3, 2005·21 cites·22 claims
- 2569US7569500B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2006·Granted Aug 4, 2009·2 cites·20 claims
- 2666US2014014172A1Thin Film Solar Cell with Ceramic Handling LayerCRYSTAL SOLAR INC·Filed 2013·Application pending·0 cites
- 2765US7829464B2Planarization method using hybrid oxide and polysilicon CMPSPANSION LLC·Filed 2006·Granted Nov 9, 2010·3 cites·19 claims
- 2864US8741698B2Atomic layer deposition of zirconium oxide for forming resistive-switching materialsTONG JINHONG·Filed 2011·Granted Jun 3, 2014·1 cites·18 claims
- 2961US9130165B2Atomic layer deposition of metal oxide materials for memory applicationsINTERMOLECULAR INC·Filed 2014·Granted Sep 8, 2015·0 cites·20 claims
- 3061US8704203B2Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2013·Granted Apr 22, 2014·0 cites·20 claims
- 3160US9543516B2Method for forming a doped metal oxide for use in resistive switching memory elementsINTERMOLECULAR INC·Filed 2014·Granted Jan 10, 2017·0 cites·20 claims
- 3260US8846443B2Atomic layer deposition of metal oxides for memory applicationsHONG ZHENDONG·Filed 2011·Granted Sep 30, 2014·1 cites·19 claims
- 3357US9444047B2Embedded nonvolatile memory elements having resistive switching characteristicsINTERMOLECULAR INC·Filed 2015·Granted Sep 13, 2016·1 cites·19 claims
- 3457US9006026B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·0 cites·17 claims
- 3557US2013334484A1Atomic Layer Deposition of Hafnium and Zirconium Oxides for Memory ApplicationsINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 3656US9065040B2Controlling composition of multiple oxides in resistive switching layers using atomic layer depositionINTERMOLECULAR INC·Filed 2014·Granted Jun 23, 2015·0 cites·20 claims
- 3756US8987697B2Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2014·Granted Mar 24, 2015·0 cites·9 claims
- 3854US9087978B1Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2015·Granted Jul 21, 2015·0 cites·20 claims
- 3950US2014175367A1Materials for Thin Resisive Switching Layers of Re-RAM CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 4046US9269896B2Confined defect profiling within resistive random memory access cellsINTERMOLECULAR INC·Filed 2014·Granted Feb 23, 2016·0 cites·15 claims
- 4143US8791445B2Interfacial oxide used as switching layer in a nonvolatile resistive memory elementHIGUCHI RANDALL·Filed 2012·Granted Jul 29, 2014·0 cites·20 claims
- 4243US2014175360A1Bilayered Oxide Structures for ReRAM CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 4341US2014154859A1Methods and Vehicles for High Productivity Combinatorial Testing of Materials for Resistive Random Access Memory CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 4439US2013065377A1Interface layer improvements for nonvolatile memory applicationsGOPAL VIDYUT·Filed 2011·Application pending·0 cites
- 4538US9318333B2Dielectric extension to mitigate short channel effectsGOPAL VIDYUT·Filed 2007·Granted Apr 19, 2016·0 cites·12 claims
- 4637US2015188039A1Embedded Resistors with Oxygen Gettering LayersINTERMOLECULAR INC·Filed 2013·Application pending·0 cites
- 4736US2009154215A1Reducing noise and disturbance between memory storage elements using angled wordlinesSPANSION LLC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →