Inventor · disambiguated record
Vida Ilderem
Also filed as: ILDEREM VIDA
24 granted patents·722 citations·filing 1985–2007
97Inventor score
Files withMOTOROLA INC11NAT SEMICONDUCTOR CORP9MASSACHUSETTS INST TECHNOLOGY2FREESCALE SEMICONDUCTOR INC1OLSON WILLIAM L1
Top patents by PatentIndex Score
24 records- 0191US5338696AMethod of fabricating BiCMOS deviceNAT SEMICONDUCTOR CORP·Filed 1993·Granted Aug 16, 1994·79 cites·8 claims
- 0286US4957777AVery low pressure chemical vapor deposition process for deposition of titanium silicide filmsMASSACHUSETTS INST TECHNOLOGY·Filed 1989·Granted Sep 18, 1990·85 cites·14 claims
- 0384US5079182ABicmos device having self-aligned well tap and method of fabricationNAT SEMICONDUCTOR CORP·Filed 1990·Granted Jan 7, 1992·54 cites·10 claims
- 0482US5580815AProcess for forming field isolation and a structure over a semiconductor substrateMOTOROLA INC·Filed 1994·Granted Dec 3, 1996·74 cites·29 claims
- 0578US5675166AFET with stable threshold voltage and method of manufacturing the sameMOTOROLA INC·Filed 1995·Granted Oct 7, 1997·39 cites·16 claims
- 0676US5716866AMethod of forming a semiconductor deviceMOTOROLA INC·Filed 1995·Granted Feb 10, 1998·39 cites·27 claims
- 0776US5541132AInsulated gate semiconductor device and method of manufactureMOTOROLA INC·Filed 1995·Granted Jul 30, 1996·46 cites·19 claims
- 0873US6017798AFET with stable threshold voltage and method of manufacturing the sameMOTOROLA INC·Filed 1997·Granted Jan 25, 2000·31 cites·12 claims
- 0970US5814545ASemiconductor device having a phosphorus doped PECVD film and a method of manufactureMOTOROLA INC·Filed 1997·Granted Sep 29, 1998·44 cites·10 claims
- 1070US5661046AMethod of fabricating BiCMOS deviceNAT SEMICONDUCTOR CORP·Filed 1994·Granted Aug 26, 1997·24 cites·4 claims
- 1170US5107321AInterconnect method for semiconductor devicesNAT SEMICONDUCTOR CORP·Filed 1990·Granted Apr 21, 1992·30 cites·7 claims
- 1269US8140439B2Method and apparatus for enabling digital rights management in file transfersOLSON WILLIAM L·Filed 2007·Granted Mar 20, 2012·7 cites·20 claims
- 1367US4668530ALow pressure chemical vapor deposition of refractory metal silicidesMASSACHUSETTS INST TECHNOLOGY·Filed 1985·Granted May 26, 1987·27 cites·6 claims
- 1461US5231042AFormation of silicide contacts using a sidewall oxide processNAT SEMICONDUCTOR CORP·Filed 1992·Granted Jul 27, 1993·21 cites·6 claims
- 1559US5879999AMethod of manufacturing an insulated gate semiconductor device having a spacer extensionMOTOROLA INC·Filed 1996·Granted Mar 9, 1999·19 cites·15 claims
- 1659US5707889AProcess for forming field isolationMOTOROLA INC·Filed 1996·Granted Jan 13, 1998·21 cites·15 claims
- 1757US5338694AMethod of fabricating BiCMOS deviceNAT SEMICONDUCTOR CORP·Filed 1992·Granted Aug 16, 1994·15 cites·1 claims
- 1852US7320931B2Interfacial layer for use with high k dielectric materialsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 22, 2008·3 cites·18 claims
- 1952US5466960ABiCMOS device having self-aligned well tap and method of fabricationNAT SEMICONDUCTOR CORP·Filed 1991·Granted Nov 14, 1995·13 cites·4 claims
- 2051US5139961AReducing base resistance of a bjt by forming a self aligned silicide in the single crystal region of the extrinsic baseNAT SEMICONDUCTOR CORP·Filed 1990·Granted Aug 18, 1992·25 cites·13 claims
- 2144US5817561AInsulated gate semiconductor device and method of manufactureMOTOROLA INC·Filed 1996·Granted Oct 6, 1998·7 cites·17 claims
- 2244US5731612AInsulated gate field effect transistor structure having a unilateral source extensionMOTOROLA INC·Filed 1997·Granted Mar 24, 1998·10 cites·12 claims
- 2336US5242854AHigh performance semiconductor devices and their manufactureNAT SEMICONDUCTOR CORP·Filed 1992·Granted Sep 7, 1993·8 cites·9 claims
- 2432US6097060AInsulated gate semiconductor deviceMOTOROLA INC·Filed 1998·Granted Aug 1, 2000·1 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →