Inventor · disambiguated record
Victor Ku
Also filed as: KU VICTOR
19 granted patents·1 pending application·786 citations·filing 1974–2008
96Inventor score
Top patents by PatentIndex Score
20 records- 0197US7041538B2Method of manufacturing a disposable reversed spacer process for high performance recessed channel CMOSIBM·Filed 2003·Granted May 9, 2006·124 cites·11 claims
- 0297US6921711B2Method for forming metal replacement gate of high performanceIBM·Filed 2003·Granted Jul 26, 2005·147 cites·25 claims
- 0395US7326610B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2005·Granted Feb 5, 2008·34 cites·13 claims
- 0494US7056794B2FET gate structure with metal gate electrode and silicide contactIBM·Filed 2004·Granted Jun 6, 2006·96 cites·20 claims
- 0590US7029966B2Process options of forming silicided metal gates for advanced CMOS devicesIBM·Filed 2003·Granted Apr 18, 2006·53 cites·2 claims
- 0689US6677646B2Method and structure of a disposable reversed spacer process for high performance recessed channel CMOSIBM·Filed 2002·Granted Jan 13, 2004·41 cites·9 claims
- 0788US3999163ASecondary storage facility for data processing systemsDIGITAL EQUIPMENT CORP·Filed 1974·Granted Dec 21, 1976·73 cites·32 claims
- 0887US6544874B2Method for forming junction on insulator (JOI) structureIBM·Filed 2001·Granted Apr 8, 2003·48 cites·36 claims
- 0983US7056782B2CMOS silicide metal gate integrationIBM·Filed 2004·Granted Jun 6, 2006·25 cites·19 claims
- 1083US6506649B2Method for forming notch gate having self-aligned raised source/drain structureIBM·Filed 2001·Granted Jan 14, 2003·33 cites·13 claims
- 1181US7411227B2CMOS silicide metal gate integrationIBM·Filed 2006·Granted Aug 12, 2008·7 cites·16 claims
- 1276US6528363B2Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etchIBM·Filed 2001·Granted Mar 4, 2003·22 cites·25 claims
- 1376US6437377B1Low dielectric constant sidewall spacer using notch gate processIBM·Filed 2001·Granted Aug 20, 2002·21 cites·19 claims
- 1474US7655557B2CMOS silicide metal gate integrationIBM·Filed 2008·Granted Feb 2, 2010·4 cites·9 claims
- 1570US6927117B2Method for integration of silicide contacts and silicide gate metalsIBM·Filed 2003·Granted Aug 9, 2005·15 cites·26 claims
- 1669US6383918B1Method for reducing semiconductor contact resistancePHILIPS ELECTRONICS·Filed 2000·Granted May 7, 2002·16 cites·12 claims
- 1763US6974736B2Method of forming FET silicide gate structures incorporating inner spacersIBM·Filed 2004·Granted Dec 13, 2005·10 cites·20 claims
- 1861US7635648B2Methods for fabricating dual material gate in a semiconductor deviceAPPLIED MATERIALS INC·Filed 2008·Granted Dec 22, 2009·3 cites·21 claims
- 1949US6184119B1Methods for reducing semiconductor contact resistanceVLSI TECHNOLOGY INC·Filed 1999·Granted Feb 6, 2001·14 cites·14 claims
- 2037US2007134861A1Semiconductor devices and methods of manufacture thereofHAN JIN-PING·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →