Inventor · disambiguated record
Victor Chiang Liang
Also filed as: LIANG VICTOR · LIANG VICTOR C · LIANG VICTOR-CHIANG
109 granted patents·17 pending applications·237 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD94UNITED MICROELECTRONICS CORP10CHIU KAI-LING3HUANG SHENG-YI3VLSI TECHNOLOGY INC3
Top patents by PatentIndex Score
126 records- 0197US11990474B2Method of making a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 21, 2024·3 cites·20 claims
- 0297US11380548B2Method of manufacturing semiconductor structure through multi-implantation to fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·4 cites·20 claims
- 0394US11769698B2Method of testing semiconductor packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·20 claims
- 0494US10937858B2Method for manufacturing semiconductor and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 2, 2021·3 cites·20 claims
- 0592US11804433B2Semiconductor package structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·2 cites·20 claims
- 0692US11626343B2Semiconductor device with enhanced thermal dissipation and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 11, 2023·6 cites·20 claims
- 0792US7994576B2Metal gate transistor and resistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2009·Granted Aug 9, 2011·20 cites·8 claims
- 0892US2025366089A1Circuit Structure and Method for Reducing Electronic NoisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0991US9780089B2Bipolar junction transistor layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·8 cites·20 claims
- 1090US11088037B2Semiconductor device having probe pads and seal ringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·6 cites·20 claims
- 1188US10522535B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·3 cites·20 claims
- 1287US6326283B1Trench-diffusion corner rounding in a shallow-trench (STI) processVLSI TECHNOLOGY INC·Filed 2000·Granted Dec 4, 2001·56 cites·6 claims
- 1386US11264486B2Semiconductor structure and method of fabricating the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 1486US10672873B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·3 cites·20 claims
- 1585US11721597B2Semiconductor device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·1 cites·20 claims
- 1684US10741553B2Method of making a high speed semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·2 cites·20 claims
- 1783US11063559B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 13, 2021·3 cites·23 claims
- 1882US8093118B2Semiconductor structure and method of forming the sameTSENG KUN-SZU·Filed 2009·Granted Jan 10, 2012·13 cites·12 claims
- 1981US12464787B2Circuit structure and method for reducing electronic noisesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 2081US12243788B2Method of testing semiconductor packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2181US11552076B2Method of making a semiconductor device, semiconductor device and ring oscillatorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·18 claims
- 2281US9947701B2Low noise device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
- 2380US2025087553A1Semiconductor device with enhanced thermal dissipation and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2479US12356684B2Semiconductor structure having asymmetric source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 2579US2025301734A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2678US12191811B2High-implant channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 2778US10991687B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 2878US8193900B2Method for fabricating metal gate and polysilicon resistor and related polysilicon resistor structureFAN CHENG-WEN·Filed 2009·Granted Jun 5, 2012·8 cites·7 claims
- 2978US2024312851A1Semiconductor package and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3077US11993512B2Dual micro-electro mechanical system and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 3177US8114752B2Structure of capacitor setLIANG VICTOR CHIANG·Filed 2010·Granted Feb 14, 2012·5 cites·20 claims
- 3277US7803687B2Method for forming a thin film resistorUNITED MICROELECTRONICS CORP·Filed 2008·Granted Sep 28, 2010·8 cites·20 claims
- 3377US2024290652A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3476US11996323B2Semiconductor device with source/drain epitaxial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 3576US7321285B2Method for fabricating a transformer integrated with a semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jan 22, 2008·6 cites·13 claims
- 3675US12183655B2Semiconductor device with enhanced thermal dissipation and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 31, 2024·0 cites·20 claims
- 3775US12027433B2Semiconductor package and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3875US11973113B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 3974US11908884B2Inductive deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·13 claims
- 4074US11830889B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·0 cites·20 claims
- 4174US11532614B2FinFET varactor with low threshold voltage and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·0 cites·20 claims
- 4274US9484408B1Bipolar junction transistor layoutTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 1, 2016·2 cites·20 claims
- 4374US8349682B2Method for fabricating metal gate transistor and polysilicon resistorUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jan 8, 2013·3 cites·15 claims
- 4473US11646312B2Buried channel semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·0 cites·20 claims
- 4573US11274037B2Dual micro-electro mechanical system and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·0 cites·20 claims
- 4673US9772366B2Circuits and methods of testing a device under test using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·2 cites·20 claims
- 4773US9478659B2FinFET having doped region and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·2 cites·20 claims
- 4873US8252657B2Metal gate transistor and resistor and method for fabricating the sameTSENG CHIH-YU·Filed 2011·Granted Aug 28, 2012·4 cites·12 claims
- 4973US2023387182A1Inductive deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5073US2025174499A1Method of testing semiconductor packageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 126 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →