Inventor · disambiguated record
Vijay Parihar
Also filed as: PARIHAR VIJAY
36 granted patents·1 pending application·4,065 citations·filing 2005–2020
98Inventor score
Top patents by PatentIndex Score
37 records- 0199US7429532B2Semiconductor substrate process using an optically writable carbon-containing maskAPPLIED MATERIALS INC·Filed 2005·Granted Sep 30, 2008·539 cites·18 claims
- 0299US7422775B2Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·535 cites·17 claims
- 0399US7335611B2Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layerAPPLIED MATERIALS INC·Filed 2005·Granted Feb 26, 2008·535 cites·20 claims
- 0499US7323401B2Semiconductor substrate process using a low temperature deposited carbon-containing hard maskAPPLIED MATERIALS INC·Filed 2005·Granted Jan 29, 2008·580 cites·17 claims
- 0599US7312148B2Copper barrier reflow process employing high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·537 cites·21 claims
- 0699US7312162B2Low temperature plasma deposition process for carbon layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Dec 25, 2007·544 cites·19 claims
- 0799US7109098B1Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealingAPPLIED MATERIALS INC·Filed 2005·Granted Sep 19, 2006·551 cites·15 claims
- 0898US7279721B2Dual wavelength thermal flux laser annealAPPLIED MATERIALS INC·Filed 2005·Granted Oct 9, 2007·46 cites·21 claims
- 0997US7135392B1Thermal flux laser annealing for ion implantation of semiconductor P-N junctionsAPPLIED MATERIALS INC·Filed 2005·Granted Nov 14, 2006·50 cites·10 claims
- 1096US8288683B2Fast axis beam profile shaping for high power laser diode based annealing systemJENNINGS DEAN·Filed 2008·Granted Oct 16, 2012·34 cites·24 claims
- 1196US7595208B2Method of laser annealing using two wavelengths of radiationAPPLIED MATERIALS INC·Filed 2007·Granted Sep 29, 2009·22 cites·20 claims
- 1294US7129440B2Single axis light pipe for homogenizing slow axis of illumination systems based on laser diodesAPPLIED MATERIALS INC·Filed 2005·Granted Oct 31, 2006·26 cites·17 claims
- 1389US10857623B2Annealing apparatus using two wavelengths of radiationAPPLIED MATERIALS INC·Filed 2017·Granted Dec 8, 2020·2 cites·20 claims
- 1489US7772134B2Method of annealing using two wavelengths of continuous wave laser radiationAPPLIED MATERIALS INC·Filed 2009·Granted Aug 10, 2010·7 cites·18 claims
- 1588US8242407B2Annealing apparatus using two wavelengths of continuous wave laser radiationJENNINGS DEAN·Filed 2010·Granted Aug 14, 2012·5 cites·20 claims
- 1688US7674999B2Fast axis beam profile shaping by collimation lenslets for high power laser diode based annealing systemAPPLIED MATERIALS INC·Filed 2006·Granted Mar 9, 2010·11 cites·16 claims
- 1787US9839976B2Annealing apparatus using two wavelengths of radiationAPPLIED MATERIALS INC·Filed 2014·Granted Dec 12, 2017·3 cites·13 claims
- 1885US8907247B2Annealing apparatus using two wavelengths of laser radiationJENNINGS DEAN·Filed 2012·Granted Dec 9, 2014·3 cites·17 claims
- 1984US9879341B2Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materialsAPPLIED MATERIALS INC·Filed 2016·Granted Jan 30, 2018·4 cites·20 claims
- 2082US7795124B2Methods for contact resistance reduction of advanced CMOS devicesAPPLIED MATERIALS INC·Filed 2006·Granted Sep 14, 2010·9 cites·24 claims
- 2177US11945045B2Annealing apparatus using two wavelengths of radiationAPPLIED MATERIALS INC·Filed 2020·Granted Apr 2, 2024·0 cites·19 claims
- 2276US7422988B2Rapid detection of imminent failure in laser thermal processing of a substrateAPPLIED MATERIALS INC·Filed 2005·Granted Sep 9, 2008·4 cites·10 claims
- 2374US8864915B2Cleaning methods for improved photovoltaic module efficiencyJIA RENHE·Filed 2011·Granted Oct 21, 2014·2 cites·8 claims
- 2468US8319149B2Radiant anneal throughput optimization and thermal history minimization by interlacingMA KAI·Filed 2008·Granted Nov 27, 2012·3 cites·6 claims
- 2568US7588990B2Dynamic surface annealing of implanted dopants with low temperature HDPCVD process for depositing a high extinction coefficient optical absorber layerAPPLIED MATERIALS INC·Filed 2007·Granted Sep 15, 2009·3 cites·19 claims
- 2668US7438468B2Multiple band pass filtering for pyrometry in laser based annealing systemsAPPLIED MATERIALS INC·Filed 2005·Granted Oct 21, 2008·4 cites·9 claims
- 2765US7717617B2Multiple band pass filtering for pyrometry in laser based annealing systemsAPPLIED MATERIALS INC·Filed 2008·Granted May 18, 2010·3 cites·24 claims
- 2862US7989366B2Dopant activation in doped semiconductor substratesAPPLIED MATERIALS INC·Filed 2007·Granted Aug 2, 2011·1 cites·24 claims
- 2961US7968473B2Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopantsAPPLIED MATERIALS INC·Filed 2007·Granted Jun 28, 2011·1 cites·15 claims
- 3060US8890024B2Annealing apparatus using two wavelengths of continuous wave laser radiationJENNINGS DEAN·Filed 2012·Granted Nov 18, 2014·0 cites·10 claims
- 3160US8653408B2Annealing apparatus using two wavelengths of continuous wave laser radiationJENNINGS DEAN·Filed 2012·Granted Feb 18, 2014·0 cites·18 claims
- 3259US8765618B2Annealing apparatus using two wavelengths of continuous wave laser radiationJENNINGS DEAN·Filed 2012·Granted Jul 1, 2014·0 cites·18 claims
- 3358US8338316B2Low temperature process for depositing a high extinction coefficient non-peeling optical absorber for a scanning laser surface anneal of implanted dopantsPARIHAR VIJAY·Filed 2011·Granted Dec 25, 2012·1 cites·7 claims
- 3456US8586893B2Rapid detection of imminent failure in optical thermal processing of a substrateADAMS BRUCE E·Filed 2008·Granted Nov 19, 2013·0 cites·17 claims
- 3555US8822259B2Methods for enhancing light absorption during PV applicationsSINGH KAUSHAL K·Filed 2011·Granted Sep 2, 2014·0 cites·10 claims
- 3646US7659187B2Method of forming PN junctions including a post-ion implant dynamic surface anneal process with minimum interface trap density at the gate insulator-silicon interfaceAPPLIED MATERIALS INC·Filed 2007·Granted Feb 9, 2010·0 cites·19 claims
- 3740US2006260545A1Low temperature absorption layer deposition and high speed optical annealing systemRAMASWAMY KARTIK·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →