Inventor · disambiguated record
Vishnubhai V. Patel
Also filed as: PATEL VISHNUBHAI · PATEL VISHNUBHAI V · PATEL VISHNUBHAI VITTHALBHAI
63 granted patents·8 pending applications·5,537 citations·filing 1974–2014
99Inventor score
Top patents by PatentIndex Score
71 records- 0199US7049247B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2004·Granted May 23, 2006·558 cites·28 claims
- 0299US6479110B2Multiphase low dielectric constant material and method of depositionIBM·Filed 2001·Granted Nov 12, 2002·175 cites·27 claims
- 0399US6312793B1Multiphase low dielectric constant materialIBM·Filed 1999·Granted Nov 6, 2001·320 cites·14 claims
- 0499US6147009AHydrogenated oxidized silicon carbon materialIBM·Filed 1998·Granted Nov 14, 2000·641 cites·15 claims
- 0599US4647494ASilicon/carbon protection of metallic magnetic structuresIBM·Filed 1985·Granted Mar 3, 1987·157 cites·19 claims
- 0698US6541398B2Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the sameIBM·Filed 2002·Granted Apr 1, 2003·150 cites·34 claims
- 0798US6441491B1Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the sameIBM·Filed 2001·Granted Aug 27, 2002·187 cites·25 claims
- 0898US6437443B1Multiphase low dielectric constant material and method of depositionIBM·Filed 2001·Granted Aug 20, 2002·152 cites·10 claims
- 0998US6316167B1Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereofIBM·Filed 2000·Granted Nov 13, 2001·189 cites·50 claims
- 1098US6140226ADual damascene processing for semiconductor chip interconnectsIBM·Filed 1998·Granted Oct 31, 2000·363 cites·48 claims
- 1198US5789320APlating of noble metal electrodes for DRAM and FRAMIBM·Filed 1996·Granted Aug 4, 1998·326 cites·29 claims
- 1297US6514667B2Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereofIBM·Filed 2001·Granted Feb 4, 2003·108 cites·21 claims
- 1397US6497963B1Hydrogenated oxidized silicon carbon materialIBM·Filed 2000·Granted Dec 24, 2002·84 cites·30 claims
- 1497US5159508AMagnetic head slider having a protective coating thereonIBM·Filed 1990·Granted Oct 27, 1992·111 cites·5 claims
- 1596US6448176B1Dual damascene processing for semiconductor chip interconnectsIBM·Filed 2000·Granted Sep 10, 2002·102 cites·5 claims
- 1695US5945155ALow dielectric constant amorphous fluorinated carbon and method of preparationIBM·Filed 1997·Granted Aug 31, 1999·73 cites·8 claims
- 1795US5559367ADiamond-like carbon for use in VLSI and ULSI interconnect systemsIBM·Filed 1994·Granted Sep 24, 1996·178 cites·42 claims
- 1894US6756323B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor deviceIBM·Filed 2001·Granted Jun 29, 2004·73 cites·64 claims
- 1994US6265779B1Method and material for integration of fuorine-containing low-k dielectricsIBM·Filed 1998·Granted Jul 24, 2001·139 cites·18 claims
- 2092US7312524B2Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2006·Granted Dec 25, 2007·23 cites·30 claims
- 2192US6768200B2Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor deviceIBM·Filed 2002·Granted Jul 27, 2004·44 cites·17 claims
- 2292US6740535B2Enhanced T-gate structure for modulation doped field effect transistorsIBM·Filed 2002·Granted May 25, 2004·53 cites·17 claims
- 2392US5462784AFluorinated diamond-like carbon protective coating for magnetic recording media devicesIBM·Filed 1994·Granted Oct 31, 1995·47 cites·17 claims
- 2492US5246884ACvd diamond or diamond-like carbon for chemical-mechanical polish etch stopIBM·Filed 1991·Granted Sep 21, 1993·174 cites·25 claims
- 2591US6790789B2Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device madeIBM·Filed 2003·Granted Sep 14, 2004·55 cites·34 claims
- 2691US6770573B2Method for fabricating an ultralow dielectric constant materialIBM·Filed 2003·Granted Aug 3, 2004·51 cites·60 claims
- 2791US6428894B1Tunable and removable plasma deposited antireflective coatingsIBM·Filed 1997·Granted Aug 6, 2002·146 cites·27 claims
- 2890US5155657AHigh area capacitor formation using material dependent etchingIBM·Filed 1991·Granted Oct 13, 1992·124 cites·34 claims
- 2987US5679269ADiamond-like carbon for use in VLSI and ULSI interconnect systemsIBM·Filed 1996·Granted Oct 21, 1997·66 cites·5 claims
- 3085US5674638AFluorinated diamond-like carbon protective coating for magnetic recording media devicesIBM·Filed 1995·Granted Oct 7, 1997·36 cites·18 claims
- 3184US6764774B2Structures with improved adhesion to Si and C containing dielectrics and method for preparing the sameIBM·Filed 2002·Granted Jul 20, 2004·37 cites·63 claims
- 3284US6346747B1Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device madeIBM·Filed 1999·Granted Feb 12, 2002·59 cites·11 claims
- 3384US5942328ALow dielectric constant amorphous fluorinated carbon and method of preparationIBM·Filed 1996·Granted Aug 24, 1999·34 cites·14 claims
- 3483US7674521B2Materials containing voids with void size controlled on the nanometer scaleIBM·Filed 2005·Granted Mar 9, 2010·9 cites·6 claims
- 3583US6759321B2Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiationIBM·Filed 2002·Granted Jul 6, 2004·24 cites·9 claims
- 3683US5294518AAmorphous write-read optical storage memoryIBM·Filed 1992·Granted Mar 15, 1994·28 cites·15 claims
- 3782US5981000AMethod for fabricating a thermally stable diamond-like carbon filmIBM·Filed 1998·Granted Nov 9, 1999·55 cites·10 claims
- 3882US5440507ADiamond-like carbon write-read optical storage memoryIBM·Filed 1994·Granted Aug 8, 1995·26 cites·21 claims
- 3980US8268411B2Materials containing voids with void size controlled on the nanometer scaleGATES STEPHEN M·Filed 2009·Granted Sep 18, 2012·7 cites·13 claims
- 4080US6448655B1Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiationIBM·Filed 1998·Granted Sep 10, 2002·50 cites·9 claims
- 4179US6030904AStabilization of low-k carbon-based dielectricsIBM·Filed 1997·Granted Feb 29, 2000·53 cites·12 claims
- 4279US5674355ADiamond-like carbon for use in VLSI and ULSI interconnect systemsIBM·Filed 1995·Granted Oct 7, 1997·46 cites·7 claims
- 4377US6972440B2Enhanced T-gate structure for modulation doped field effect transistorsIBM·Filed 2004·Granted Dec 6, 2005·19 cites·10 claims
- 4476US8618183B2Materials containing voids with void size controlled on the nanometer scaleGATES STEPHEN M·Filed 2012·Granted Dec 31, 2013·3 cites·16 claims
- 4576US7067437B2Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the sameIBM·Filed 2003·Granted Jun 27, 2006·15 cites·9 claims
- 4674US6953984B2Hydrogenated oxidized silicon carbon materialIBM·Filed 2004·Granted Oct 11, 2005·15 cites·2 claims
- 4774US5663854APrebent ceramic suspensionIBM·Filed 1995·Granted Sep 2, 1997·25 cites·28 claims
- 4873US7888741B2Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the sameIBM·Filed 2006·Granted Feb 15, 2011·3 cites·16 claims
- 4971US8637412B2Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVDGRILL ALFRED·Filed 2011·Granted Jan 28, 2014·2 cites·15 claims
- 5069US4111857AHighly conducting organometallic polymersIBM·Filed 1977·Granted Sep 5, 1978·18 cites·8 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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