Inventor · disambiguated record
Volker Kahlert
Also filed as: KAHLERT VOLKER
25 granted patents·5 pending applications·597 citations·filing 2002–2012
95Inventor score
Files withADVANCED MICRO DEVICES INC16STRECK CHRISTOF4GLOBALFOUNDRIES INC3KAHLERT VOLKER2BAER STEFFEN1
Top patents by PatentIndex Score
30 records- 0198US7829460B2Method of manufracturing increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitrideGLOBALFOUNDRIES INC·Filed 2007·Granted Nov 9, 2010·467 cites·12 claims
- 0286US7867917B2Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticityADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 11, 2011·11 cites·16 claims
- 0385US8222135B2Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitrideSTRECK CHRISTOF·Filed 2010·Granted Jul 17, 2012·6 cites·8 claims
- 0484US6613660B2Metallization process sequence for a barrier metal layerADVANCED MICRO DEVICES INC·Filed 2002·Granted Sep 2, 2003·44 cites·28 claims
- 0583US8384217B2Increasing reliability of copper-based metallization structures in a microstructure device by using aluminum nitrideGLOBALFOUNDRIES INC·Filed 2012·Granted Feb 26, 2013·4 cites·15 claims
- 0679US8432035B2Metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devicesKAHLERT VOLKER·Filed 2011·Granted Apr 30, 2013·5 cites·16 claims
- 0779US7638428B2Semiconductor structure and method of forming the sameGLOBALFOUNDRIES INC·Filed 2007·Granted Dec 29, 2009·6 cites·23 claims
- 0877US7071096B2Method of forming a conductive barrier layer within critical openings by a final deposition step after a re-sputter depositionADVANCED MICRO DEVICES INC·Filed 2005·Granted Jul 4, 2006·6 cites·27 claims
- 0975US7413985B2Method for forming a self-aligned nitrogen-containing copper silicide capping layer in a microstructure deviceADVANCED MICRO DEVICES INC·Filed 2007·Granted Aug 19, 2008·6 cites·20 claims
- 1074US7678699B2Method of forming an insulating capping layer for a copper metallization layer by using a silane reactionADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 16, 2010·6 cites·19 claims
- 1172US8084354B2Method of fabricating a metal cap layer with enhanced etch resistivity for copper-based metal regions in semiconductor devicesKAHLERT VOLKER·Filed 2009·Granted Dec 27, 2011·5 cites·20 claims
- 1269US7442638B2Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Oct 28, 2008·4 cites·16 claims
- 1366US8105943B2Enhancing structural integrity and defining critical dimensions of metallization systems of semiconductor devices by using ALD techniquesSTRECK CHRISTOF·Filed 2009·Granted Jan 31, 2012·3 cites·20 claims
- 1466US7476626B2Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticityADVANCED MICRO DEVICES INC·Filed 2006·Granted Jan 13, 2009·2 cites·14 claims
- 1565US7544551B2Technique for strain engineering in Si-based Transistors by using embedded semiconductor layers including atoms with high covalent radiusADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 9, 2009·3 cites·21 claims
- 1665US6841468B2Method of forming a conductive barrier layer having improve adhesion and resistivity characteristicsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 11, 2005·11 cites·24 claims
- 1763US7491638B2Method of forming an insulating capping layer for a copper metallization layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Feb 17, 2009·1 cites·17 claims
- 1856US6984294B2Method of forming a conductive barrier layer having improved coverage within critical openingsADVANCED MICRO DEVICES INC·Filed 2003·Granted Jan 10, 2006·6 cites·17 claims
- 1951US8124532B2Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layerSTRECK CHRISTOF·Filed 2009·Granted Feb 28, 2012·0 cites·16 claims
- 2048US7595269B2Semiconductor device comprising a copper alloy as a barrier layer in a copper metallization layerADVANCED MICRO DEVICES INC·Filed 2006·Granted Sep 29, 2009·0 cites·14 claims
- 2146US8211795B2Method of forming a dielectric cap layer for a copper metallization by using a hydrogen based thermal-chemical treatmentHOHAGE JOERG·Filed 2008·Granted Jul 3, 2012·0 cites·22 claims
- 2244US2007254492A1Technique for forming a silicon nitride layer having high intrinsic compressive stressBAER STEFFEN·Filed 2006·Application pending·0 cites
- 2344US2008099918A1Semiconductor device including a porous low-k material layer stack with reduced uv sensitivitySTRECK CHRISTOF·Filed 2007·Application pending·0 cites
- 2443US7687398B2Technique for forming nickel silicide by depositing nickel from a gaseous precursorADVANCED MICRO DEVICES INC·Filed 2006·Granted Mar 30, 2010·0 cites·26 claims
- 2542US7384877B2Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidationADVANCED MICRO DEVICES INC·Filed 2006·Granted Jun 10, 2008·0 cites·21 claims
- 2642US6716650B2Interface void monitoring in a damascene processADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 6, 2004·1 cites·22 claims
- 2741US7063091B2Method for cleaning the surface of a substrateADVANCED MICRO DEVICES INC·Filed 2005·Granted Jun 20, 2006·0 cites·34 claims
- 2837US2005101120A1Method of forming local interconnect barrier layersFiled 2003·Application pending·0 cites
- 2935US2005093155A1Barrier layer including a titanium nitride liner for a copper metallization layer including a low-k dielectricFiled 2004·Application pending·0 cites
- 3035US2003186523A1Method for forming an improved metal silicide portion in a silicon-containing conductive region in an integrated circuitFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →