Inventor · disambiguated record
Voon Cheng Ngwan
Also filed as: NGWAN VOON CHENG
4 granted patents·9 pending applications·3 citations·filing 2021–2025
59Inventor score
Top patents by PatentIndex Score
13 records- 0182US12439621B2Method of making a charge coupled field effect rectifier diodeST MICROELECTRONICS PTE LTD·Filed 2022·Granted Oct 7, 2025·1 cites·26 claims
- 0280US11502192B2Monolithic charge coupled field effect rectifier embedded in a charge coupled field effect transistorST MICROELECTRONICS PTE LTD·Filed 2021·Granted Nov 15, 2022·2 cites·26 claims
- 0356US2025275221A1Air-gap in trench field plate power mosfet for reduced power loss performanceST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0452US2023268421A1Method for auto-aligned manufacturing of a trench-gate mos transistor, and shielded-gate mos transistorST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 0552US2024405098A1Gate contact structure for a trench power mosfet with a split gate configurationST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0651US2025294825A1Superjunction power semiconductor device having an improved edge terminationST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 0751US2024404905A1Passivation layer for an integrated circuit device that provides a moisture and proton barrierST MICROELECTRONICS PTE LTD·Filed 2023·Application pending·0 cites
- 0849US2024297240A1Split-gate trench power mosfet with thick poly-to-poly isolationST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 0945US2023135000A1Oxide field trench power mosfet with a multi epitaxial layer substrate configurationST MICROELECTRONICS PTE LTD·Filed 2022·Application pending·0 cites
- 1044US12224342B2Gate contact structure for a trench power MOSFET with a split gate configurationST MICROELECTRONICS PTE LTD·Filed 2022·Granted Feb 11, 2025·0 cites·25 claims
- 1144US11848378B2Split-gate trench power MOSFET with self-aligned poly-to-poly isolationST MICROELECTRONICS PTE LTD·Filed 2021·Granted Dec 19, 2023·0 cites·25 claims
- 1244US2023238341A1Thick bonding pad structure for wire bond stress reductionST MICROELECTRONICS PTE LTD·Filed 2022·Application pending·0 cites
- 1342US2022189840A1Passivation layer for an integrated circuit device that provides a moisture and proton barrierST MICROELECTRONICS PTE LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →