Inventor · disambiguated record
Wayne B. Grabowski
Also filed as: GRABOWSKI WAYNE · GRABOWSKI WAYNE B · GRABOWSKI WAYNE BRYAN
32 granted patents·3 pending applications·2,708 citations·filing 1992–2015
98Inventor score
Top patents by PatentIndex Score
35 records- 0199US6291298B1Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknessesADVANCED ANALOGIC TECH INC·Filed 1999·Granted Sep 18, 2001·212 cites·27 claims
- 0299US6239463B1Low resistance power MOSFET or other device containing silicon-germanium layerSILICONIX INC·Filed 1997·Granted May 29, 2001·305 cites·60 claims
- 0399US6049108ATrench-gated MOSFET with bidirectional voltage clampingSILICONIX INC·Filed 1997·Granted Apr 11, 2000·511 cites·14 claims
- 0498US6413822B2Super-self-aligned fabrication process of trench-gate DMOS with overlying device layerADVANCED ANALOGIC TECH INC·Filed 1999·Granted Jul 2, 2002·193 cites·8 claims
- 0596US7557406B2Segmented pillar layout for a high-voltage vertical transistorPOWER INTEGRATIONS INC·Filed 2007·Granted Jul 7, 2009·46 cites·21 claims
- 0696US6046470ATrench-gated MOSFET with integral temperature detection diodeSILICONIX INC·Filed 1997·Granted Apr 4, 2000·219 cites·31 claims
- 0795US6078090ATrench-gated Schottky diode with integral clamping diodeSILICONIX INC·Filed 1997·Granted Jun 20, 2000·265 cites·66 claims
- 0894US7816731B2Segmented pillar layout for a high-voltage vertical transistorPOWER INTEGRATIONS INC·Filed 2009·Granted Oct 19, 2010·24 cites·10 claims
- 0994US6555883B1Lateral power MOSFET for high switching speedsPOWER INTEGRATIONS INC·Filed 2001·Granted Apr 29, 2003·73 cites·15 claims
- 1093US7115958B2Lateral power MOSFET for high switching speedsPOWER INTEGRATIONS INC·Filed 2004·Granted Oct 3, 2006·60 cites·13 claims
- 1193US6825536B2Lateral power MOSFET for high switching speedsPOWER INTEGRATIONS INC·Filed 2003·Granted Nov 30, 2004·57 cites·28 claims
- 1292US6750507B2Super-self-aligned trench-gated DMOS with reduced on-resistanceADVANCED ANALOGIC TECH INC·Filed 2002·Granted Jun 15, 2004·46 cites·9 claims
- 1391US6140678ATrench-gated power MOSFET with protective diodeSILICONIX INC·Filed 1997·Granted Oct 31, 2000·92 cites·14 claims
- 1490US7238568B2Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the sameADVANCED ANALOGIC TECH INC·Filed 2005·Granted Jul 3, 2007·12 cites·3 claims
- 1590US6204533B1Vertical trench-gated power MOSFET having stripe geometry and high cell densitySILICONIX INC·Filed 1998·Granted Mar 20, 2001·86 cites·8 claims
- 1689US7052963B2Method of forming trench transistor with chained implanted body including a plurality of implantation with different energiesADVANCED ANALOGIC TECH INC·Filed 2004·Granted May 30, 2006·30 cites·18 claims
- 1789US6900100B2Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the sameADVANCED ANALOGIC TECH INC·Filed 2004·Granted May 31, 2005·29 cites·11 claims
- 1888US6924198B2Self-aligned trench transistor using etched contactADVANCED ANALOGIC TECH INC·Filed 2004·Granted Aug 2, 2005·31 cites·19 claims
- 1987US5411901AMethod of making high voltage transistorPOWER INTEGRATIONS INC·Filed 1993·Granted May 2, 1995·57 cites·12 claims
- 2086US5323044ABi-directional MOSFET switchPOWER INTEGRATIONS INC·Filed 1992·Granted Jun 21, 1994·67 cites·10 claims
- 2185US6072216AVertical DMOS field effect transistor with conformal buried layer for reduced on-resistanceSILICONIX INC·Filed 1998·Granted Jun 6, 2000·79 cites·21 claims
- 2285US5274259AHigh voltage transistorPOWER INTEGRATIONS INC·Filed 1993·Granted Dec 28, 1993·54 cites·10 claims
- 2381US6277695B1Method of forming vertical planar DMOSFET with self-aligned contactSILICONIX INC·Filed 1999·Granted Aug 21, 2001·52 cites·15 claims
- 2480US7282412B2Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the sameADVANCED ANALOGIC TECH INC·Filed 2005·Granted Oct 16, 2007·5 cites·12 claims
- 2580US6756274B2Fabrication process for a super-self-aligned trench-gated DMOS with reduced on-resistanceADVANCED ANALOGIC TECH INC·Filed 2002·Granted Jun 29, 2004·18 cites·29 claims
- 2680US6268242B1Method of forming vertical mosfet device having voltage clamped gate and self-aligned contactFiled 1999·Granted Jul 31, 2001·46 cites·14 claims
- 2779US7276411B2Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the sameADVANCED ANALOGIC TECH INC·Filed 2005·Granted Oct 2, 2007·5 cites·14 claims
- 2875US8765609B2Deposit/etch for tapered oxidePARTHASARATHY VIJAY·Filed 2012·Granted Jul 1, 2014·3 cites·13 claims
- 2973US9768274B2Laterally-graded doping of materialsPOWER INTEGRATIONS INC·Filed 2015·Granted Sep 19, 2017·2 cites·13 claims
- 3066US8552493B2Segmented pillar layout for a high-voltage vertical transistorPARTHASARATHY VIJAY·Filed 2009·Granted Oct 8, 2013·2 cites·6 claims
- 3166US5998834ALong channel trench-gated power MOSFET having fully depleted body regionSILICONIX INC·Filed 1996·Granted Dec 7, 1999·26 cites·7 claims
- 3263US9472630B2Deposit/etch for tapered oxidePOWER INTEGRATIONS INC·Filed 2014·Granted Oct 18, 2016·1 cites·8 claims
- 3354US2014042533A1Segmented Pillar Layout for a High-Voltage Vertical TransistorPOWER INTEGRATIONS INC·Filed 2013·Application pending·0 cites
- 3441US2014045318A1Forming a tapered oxide from a thick oxide layerPARTHASARATHY VIJAY·Filed 2012·Application pending·0 cites
- 3538US2001026961A1Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the sameFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →