Inventor · disambiguated record
Wang-Chun Huang
Also filed as: HUANG WANG-CHUN
23 granted patents·11 pending applications·25 citations·filing 2015–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD34
Top patents by PatentIndex Score
34 records- 0197US11610805B2Replacement material for backside gate cut featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·4 cites·20 claims
- 0295US11973077B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·2 cites·20 claims
- 0393US11735647B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 0492US12218224B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 0590US11637101B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·2 cites·20 claims
- 0689US11715781B2Semiconductor devices with improved capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·2 cites·18 claims
- 0787US12094938B2Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·1 cites·20 claims
- 0887US9601626B2Semiconductor device including fin structure with two channel layers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·4 cites·20 claims
- 0986US11575034B2Back end of line nanowire power switch transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 7, 2023·1 cites·20 claims
- 1085US11152358B2Vertical structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 19, 2021·2 cites·20 claims
- 1184US10971609B2Back end of line nanowire power switch transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·2 cites·20 claims
- 1283US11245029B2Structure and formation method of semiconductor device with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 8, 2022·2 cites·20 claims
- 1381US12484241B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 1481US12062714B2Back end of line nanowire power switch transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 1581US2025063809A1Fin field effect transistors having vertically stacked nano-sheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1680US2025359176A1Field effect transistor with isolated source/drains and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1779US2024387683A1Semiconductor devices with improved capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1877US11894260B2Replacement material for backside gate cut featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 1977US2025318169A1Manufacturing method of semiconductor device having thin bottom channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2074US12199095B2Fin field effect transistors having vertically stacked nano-sheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 14, 2025·0 cites·20 claims
- 2174US12148811B2Method of fabricating a semiconductor device having capacitor materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 2273US11640989B2Semiconductor device structure with metal gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 2, 2023·0 cites·20 claims
- 2373US2024363702A1Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2470US12376322B2Semiconductor device having thin bottom channel and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 2570US2025098219A1Field effect transistor with isolated source/drains and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2669US11901365B2Finfet device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
- 2762US10326023B2Semiconductor device including fin structure with two channel layers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 18, 2019·0 cites·20 claims
- 2861US2025374660A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2958US9966469B2Semiconductor device including fin structure with two channel layers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 8, 2018·0 cites·20 claims
- 3057US11024650B2FinFET device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·0 cites·18 claims
- 3155US2024322013A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3255US2024395861A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3354US2024096979A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3453US2024079277A1Semiconductor device structure with gate stack and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →