Inventor · disambiguated record
Water Lur
Also filed as: LUR WATER
184 granted patents·15 pending applications·6,360 citations·filing 1990–2010
99Inventor score
Files withUNITED MICROELECTRONICS CORP178LUR WATER2LAI JOEY1LIU CHIH-CHIEN1UNITED INTEGRATED CIRCUITS CORP1
Top patents by PatentIndex Score
199 records- 0197US7253095B2Air gap formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit deviceUNITED MICROELECTRONICS CORP·Filed 2005·Granted Aug 7, 2007·59 cites·16 claims
- 0297US6203863B1Method of gap fillingUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 20, 2001·318 cites·20 claims
- 0397US6174812B1Copper damascene technology for ultra large scale integration circuitsUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 16, 2001·405 cites·12 claims
- 0496US5968610AMulti-step high density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Oct 19, 1999·371 cites·22 claims
- 0596US5712185AMethod for forming shallow trench isolationUNITED MICROELECTRONICS·Filed 1996·Granted Jan 27, 1998·418 cites·12 claims
- 0695US8062536B2High density plasma chemical vapor deposition processLIU CHIH-CHIEN·Filed 2010·Granted Nov 22, 2011·20 cites·12 claims
- 0795US5364803AMethod of preventing fluorine-induced gate oxide degradation in WSix polycide structureUNITED MICROELECTRONICS CORP·Filed 1993·Granted Nov 15, 1994·116 cites·9 claims
- 0894US5801094ADual damascene processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 1, 1998·178 cites·12 claims
- 0993US7138329B2Air gap for tungsten/aluminum plug applicationsUNITED MICROELECTRONICS CORP·Filed 2002·Granted Nov 21, 2006·74 cites·34 claims
- 1092US5393704ASelf-aligned trenched contact (satc) processUNITED MICROELECTRONICS CORP·Filed 1993·Granted Feb 28, 1995·103 cites·23 claims
- 1190US7449407B2Air gap for dual damascene applicationsUNITED MICROELECTRONICS CORP·Filed 2002·Granted Nov 11, 2008·59 cites·25 claims
- 1290US6917109B2Air gap structure and formation method for reducing undesired capacitive coupling between interconnects in an integrated circuit deviceUNITED MICORELECTRONICS CORP·Filed 2002·Granted Jul 12, 2005·61 cites·20 claims
- 1390US6013569AOne step salicide process without bridgingUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 11, 2000·86 cites·31 claims
- 1490US5668394APrevention of fluorine-induced gate oxide degradation in WSi polycide structureUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 16, 1997·74 cites·7 claims
- 1590US5413962AMulti-level conductor process in VLSI fabrication utilizing an air bridgeUNITED MICROELECTRONICS CORP·Filed 1994·Granted May 9, 1995·106 cites·12 claims
- 1689US6159845AMethod for manufacturing dielectric layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted Dec 12, 2000·111 cites·14 claims
- 1788US6743721B2Method and system for making cobalt silicideUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jun 1, 2004·29 cites·12 claims
- 1888US5364817ATungsten-plug processUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 15, 1994·95 cites·20 claims
- 1986US6475865B1Method of fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2000·Granted Nov 5, 2002·36 cites·6 claims
- 2086US6265780B1Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 24, 2001·65 cites·11 claims
- 2185US6017817AMethod of fabricating dual damasceneUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 25, 2000·83 cites·12 claims
- 2285US5960299AMethod of fabricating a shallow-trench isolation structure in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 28, 1999·77 cites·11 claims
- 2385US5753559AMethod for growing hemispherical grain siliconUNITED MICROELECTRONICS CORP·Filed 1996·Granted May 19, 1998·59 cites·22 claims
- 2485US5663599AMetal layout pattern for improved passivation layer coverageUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 2, 1997·66 cites·12 claims
- 2585US5451804AVLSI device with global planarizationUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 19, 1995·80 cites·7 claims
- 2684US7271101B2High density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 2005·Granted Sep 18, 2007·6 cites·32 claims
- 2783US6093089AApparatus for controlling uniformity of polished materialUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 25, 2000·55 cites·10 claims
- 2883US5395790AStress-free isolation layerUNITED MICROELECTRONICS CORP·Filed 1994·Granted Mar 7, 1995·81 cites·12 claims
- 2982US6117345AHigh density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 12, 2000·44 cites·21 claims
- 3082US5874353AMethod of forming a self-aligned silicide deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 23, 1999·52 cites·16 claims
- 3182US5449630AMethod for fabricating a trench capacitor structure for dynamic random access memory integrated circuitUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 12, 1995·52 cites·14 claims
- 3281US6017790AMethod of manufacturing embedded dynamic random access memoryUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 25, 2000·42 cites·30 claims
- 3381US5956598AMethod for fabricating a shallow-trench isolation structure with a rounded corner in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 21, 1999·63 cites·10 claims
- 3479US6306722B1Method for fabricating shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 23, 2001·53 cites·22 claims
- 3579US6265313B1Method of manufacturing copper interconnectUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 24, 2001·59 cites·7 claims
- 3679US5640041AStress relaxation in dielectric before metallizationUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jun 17, 1997·43 cites·6 claims
- 3779US5466630ASilicon-on-insulator technique with buried gapUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 14, 1995·58 cites·17 claims
- 3878US6838357B2Chemical mechanical polishing for forming a shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jan 4, 2005·13 cites·23 claims
- 3978US5902752AActive layer mask with dummy patternUNITED MICROELECTRONICS CORP·Filed 1996·Granted May 11, 1999·53 cites·6 claims
- 4077US5482885AMethod for forming most capacitor using poly spacer techniqueUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jan 9, 1996·48 cites·1 claims
- 4176US5494853AMethod to solve holes in passivation by metal layoutUNITED MICROELECTRONICS CORP·Filed 1994·Granted Feb 27, 1996·46 cites·6 claims
- 4276US5445989AMethod of forming device isolation regionsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Aug 29, 1995·61 cites·16 claims
- 4376US5308786ATrench isolation for both large and small areas by means of silicon nodules after metal etchingUNITED MICROELECTRONICS CORP·Filed 1993·Granted May 3, 1994·64 cites·43 claims
- 4475US6344408B1Method for improving non-uniformity of chemical mechanical polishing by over coatingUNITED MICROELECTRONICS CORP·Filed 1999·Granted Feb 5, 2002·44 cites·20 claims
- 4575US6169012B1Chemical mechanical polishing for forming a shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jan 2, 2001·32 cites·6 claims
- 4675US5554566AMethod to eliminate polycide peelingUNITED MICROELECTRONICS CORP·Filed 1994·Granted Sep 10, 1996·36 cites·13 claims
- 4774US7018906B2Chemical mechanical polishing for forming a shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2004·Granted Mar 28, 2006·10 cites·10 claims
- 4874US6943110B1Wafer processing apparatus and methods for depositing cobalt silicideUNITED MICROELECTRONICS CORP·Filed 2003·Granted Sep 13, 2005·10 cites·23 claims
- 4974US5466632AField oxide with curvilinear boundaries and method of producing the sameUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 14, 1995·53 cites·5 claims
- 5073US7064048B2Method of forming a semi-insulating regionUNITED MICROELECTRONICS CORP·Filed 2003·Granted Jun 20, 2006·13 cites·23 claims
Showing the top 50 of 199 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →