Inventor · disambiguated record
Wan Jae Park
Also filed as: PARK WAN J · PARK WAN JAE
33 granted patents·16 pending applications·138 citations·filing 2000–2024
96Inventor score
Top patents by PatentIndex Score
49 records- 0190US10770294B2Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistanceTOKYO ELECTRON LTD·Filed 2019·Granted Sep 8, 2020·6 cites·21 claims
- 0284US12176185B2Apparatus and method for processing substrate using plasmaSEMES CO LTD·Filed 2022·Granted Dec 24, 2024·1 cites·19 claims
- 0382US12308219B2Substrate treating method and substrate treating apparatusSEMES CO LTD·Filed 2022·Granted May 20, 2025·1 cites·6 claims
- 0480US7488687B2Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 10, 2009·7 cites·20 claims
- 0577US12142492B2Method for treating substrate and apparatus for treating substrateSEMES CO LTD·Filed 2020·Granted Nov 12, 2024·1 cites·8 claims
- 0677US7553758B2Method of fabricating interconnections of microelectronic device using dual damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 30, 2009·7 cites·17 claims
- 0776US7183195B2Method of fabricating dual damascene interconnections of microelectronic device using hybrid low k-dielectric and carbon-free inorganic fillerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 27, 2007·24 cites·51 claims
- 0875US6719808B1Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard maskSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 13, 2004·15 cites·16 claims
- 0971US7560332B2Integrated circuit capacitor structureSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 14, 2009·4 cites·14 claims
- 1071US6657192B1Method of determining degree of charge-up induced by plasma used for manufacturing semiconductor device and apparatus thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 2, 2003·12 cites·14 claims
- 1170US2024412951A1Apparatus for treating substrate and method for treating substrateSEMES CO LTD·Filed 2024·Application pending·0 cites
- 1267US7435673B2Methods of forming integrated circuit devices having metal interconnect structures thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 14, 2008·4 cites·16 claims
- 1365US6333219B1Method for forming a polysilicon node in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 25, 2001·14 cites·12 claims
- 1464US6855629B2Method for forming a dual damascene wiring pattern in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·12 cites·18 claims
- 1563US6849536B2Inter-metal dielectric patterns and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·12 cites·28 claims
- 1662US6479399B2Method of forming interlevel dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 12, 2002·8 cites·14 claims
- 1761US8058176B2Methods of patterning insulating layers using etching techniques that compensate for etch rate variationsPARK WAN-JAE·Filed 2007·Granted Nov 15, 2011·3 cites·4 claims
- 1860US12340983B2Apparatus for treating substrate and method for treating substrateSEMES CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 1959US7541290B2Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processingSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·1 cites·8 claims
- 2059US2025218729A1Shower head assembly and substrate processing apparatusSEMES CO LTD·Filed 2024·Application pending·0 cites
- 2158US2022076925A1Apparatus and method for processing substrate using plasmaSEMES CO LTD·Filed 2021·Application pending·0 cites
- 2257US2025218732A1Substrate treating apparatus and methodSEMES CO LTD·Filed 2024·Application pending·0 cites
- 2356US12237151B2Apparatus and method for processing substrate using plasmaSEMES CO LTD·Filed 2022·Granted Feb 25, 2025·0 cites·13 claims
- 2456US2021287877A1Apparatus for treating substrate and method for treating substrateSEMES CO LTD·Filed 2021·Application pending·0 cites
- 2556US2024096603A1Apparatus for treating substrateSEMES CO LTD·Filed 2023·Application pending·0 cites
- 2655US12448680B2Method of forming pattern structure including silicon nitrideSEMES CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 2754US11372332B2Plasma treatment method to improve photo resist roughness and remove photo resist scumTOKYO ELECTRON LTD·Filed 2019·Granted Jun 28, 2022·0 cites·8 claims
- 2853US12315699B2Substrate treating apparatus and substrate treating methodSEMES CO LTD·Filed 2022·Granted May 27, 2025·0 cites·13 claims
- 2952US12146710B2Substrate treating apparatus and substrate treating system comprising the sameSEMES CO LTD·Filed 2021·Granted Nov 19, 2024·0 cites·19 claims
- 3051US12463015B2Substrate processing apparatus and method using the plasmaSEMES CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·18 claims
- 3151US2023215699A1Method of treating substrate and apparatus for treating substrateSEMES CO LTD·Filed 2022·Application pending·0 cites
- 3250US12341030B2Support unit and substrate treating apparatusSEMES CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·17 claims
- 3350US2023207248A1Substrate treating apparatus and substrate treating methodSEMES CO LTD·Filed 2022·Application pending·0 cites
- 3449US12451358B2Method for fabricating semiconductor device and apparatus for processing substrate using plasmaSEMES CO LTD·Filed 2021·Granted Oct 21, 2025·0 cites·5 claims
- 3549US2023144896A1Substrate treating apparatus and semiconductor manufacturing equipment including the sameSEMES CO LTD·Filed 2022·Application pending·0 cites
- 3648US11978654B2Substrate processing apparatusSEMES CO LTD·Filed 2020·Granted May 7, 2024·0 cites·20 claims
- 3748US7033944B2Dual damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 25, 2006·3 cites·16 claims
- 3848US6465346B2Conducting line of semiconductor device and manufacturing method thereof using aluminum oxide layer as hard maskSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 15, 2002·2 cites·22 claims
- 3948US2023317419A1Apparatus and method for processing substrate using plasmaSEMES CO LTD·Filed 2022·Application pending·0 cites
- 4046US2023022720A1Apparatus for treating substrateSEMES CO LTD·Filed 2022·Application pending·0 cites
- 4146US2023352275A1Apparatus and method for processing substrateSEMES CO LTD·Filed 2022·Application pending·0 cites
- 4245US7229875B2Integrated circuit capacitor structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 12, 2007·1 cites·21 claims
- 4344US12327735B2Apparatus and method for processing substrateSEMES CO LTD·Filed 2020·Granted Jun 10, 2025·0 cites·8 claims
- 4442US7145140B2Method of determining whether a conductive layer of a semiconductor device is exposed through a contact holdSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 5, 2006·0 cites·8 claims
- 4542US2004185664A1Method of and apparatus for manufacturing a semiconductor device using a polysilicon hard maskFiled 2004·Application pending·0 cites
- 4640US2007105362A1Methods of forming contact structures in low-k materials using dual damascene processesKIM JAE H·Filed 2005·Application pending·0 cites
- 4736US2006024971A1Dry etching method using polymer mask selectively formed by CO gasSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4835US2002090808A1Method of manufacturing a self-aligned contact from a conductive layer that is free of voidsFiled 2001·Application pending·0 cites
- 4931US9978567B2Apparatus and method of treating a substrateSEMES CO LTD·Filed 2015·Granted May 22, 2018·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →