Inventor · disambiguated record
Walter Rieger
Also filed as: RIEGER WALTER
71 granted patents·6 pending applications·1,045 citations·filing 1976–2022
99Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA21INFINEON TECHNOLOGIES AG15INFINEON TECHNOLOGIES AUSTRIA AG13SCHULER GMBH L7HIRLER FRANZ6
Top patents by PatentIndex Score
77 records- 0197US8022474B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 20, 2011·34 cites·17 claims
- 0296US9373700B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Jun 21, 2016·9 cites·20 claims
- 0396US6690062B2Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitanceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 10, 2004·119 cites·20 claims
- 0495US7005351B2Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 28, 2006·113 cites·28 claims
- 0594US8587033B1Monolithically integrated HEMT and current protection deviceRIEGER WALTER·Filed 2012·Granted Nov 19, 2013·24 cites·25 claims
- 0693US8618598B2Power MOSFET semiconductor deviceHAEBERLEN OLIVER·Filed 2011·Granted Dec 31, 2013·12 cites·5 claims
- 0793US8314447B2Semiconductor including lateral HEMTHIRLER FRANZ·Filed 2010·Granted Nov 20, 2012·14 cites·9 claims
- 0893US8193559B2Monolithic semiconductor switches and method for manufacturingHAEBERLEN OLIVER·Filed 2011·Granted Jun 5, 2012·26 cites·17 claims
- 0993US6806533B2Semiconductor component with an increased breakdown voltage in the edge areaINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 19, 2004·83 cites·10 claims
- 1092US6998678B2Semiconductor arrangement with a MOS-transistor and a parallel Schottky-diodeINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 14, 2006·69 cites·22 claims
- 1191US9793391B2Power MOSFET semiconductorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 17, 2017·5 cites·6 claims
- 1291US7893486B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Feb 22, 2011·12 cites·7 claims
- 1391US7091573B2Power transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 15, 2006·62 cites·8 claims
- 1490US8334564B2Field plate trench transistor and method for producing itHIRLER FRANZ·Filed 2011·Granted Dec 18, 2012·8 cites·7 claims
- 1590US7851349B2Method for producing a connection electrode for two semiconductor zones arranged one above anotherINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 14, 2010·15 cites·11 claims
- 1690US6891223B2Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 10, 2005·52 cites·16 claims
- 1788US10283634B2Power MOSFET semiconductorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted May 7, 2019·3 cites·10 claims
- 1888US9773706B2Semiconductor device having field-effect structures with different gate materials, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 26, 2017·5 cites·12 claims
- 1988US8084865B2Anchoring structure and intermeshing structureHIRLER FRANZ·Filed 2008·Granted Dec 27, 2011·17 cites·13 claims
- 2088US7465987B2Field electrode trench transistor structure with voltage dividerINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 16, 2008·16 cites·18 claims
- 2187US7875951B2Semiconductor with active component and method for manufactureINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 25, 2011·13 cites·23 claims
- 2285US9202909B2Power MOSFET semiconductorINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 1, 2015·4 cites·15 claims
- 2385US7250343B2Power transistor arrangement and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 31, 2007·37 cites·23 claims
- 2484US7943955B2Monolithic semiconductor switches and method for manufacturingINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted May 17, 2011·13 cites·8 claims
- 2583US7186618B2Power transistor arrangement and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 6, 2007·32 cites·18 claims
- 2682US10438945B2Method of manufacturing a semiconductor dieINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 8, 2019·3 cites·15 claims
- 2782US7541260B2Trench diffusion isolation in semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jun 2, 2009·9 cites·12 claims
- 2880US9509284B2Electronic circuit and method for operating a transistor arrangementINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Nov 29, 2016·5 cites·24 claims
- 2978US5383348APress comprising a transfer device for sheet metal partsSCHULER GMBH L·Filed 1993·Granted Jan 24, 1995·25 cites·10 claims
- 3076US8884335B2Semiconductor including lateral HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Nov 11, 2014·3 cites·13 claims
- 3176US8759905B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Jun 24, 2014·2 cites·14 claims
- 3276US8362551B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Jan 29, 2013·4 cites·22 claims
- 3372US9406673B2Semiconductor component with transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Aug 2, 2016·3 cites·27 claims
- 3470US12094963B2Nitride semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 17, 2024·0 cites·16 claims
- 3570US9171841B2Field plate trench transistor and method for producing itINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Oct 27, 2015·1 cites·18 claims
- 3670US7307010B2Method for processing a thin semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2004·Granted Dec 11, 2007·12 cites·14 claims
- 3770US6858895B2Circuit configuration having a field-effect transistor operable at higher frequenciesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 22, 2005·19 cites·8 claims
- 3869US7999287B2Lateral HEMT and method for the production of a lateral HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Aug 16, 2011·3 cites·25 claims
- 3967US8946767B2Monolithic semiconductor switches and method for manufacturingHAEBERLEN OLIVER·Filed 2012·Granted Feb 3, 2015·2 cites·4 claims
- 4065US8067796B2Semiconductor component with cell structure and method for producing the sameHIRLER FRANZ·Filed 2008·Granted Nov 29, 2011·2 cites·20 claims
- 4164US9041066B2Protection device for normally-on and normally-off high electron mobility transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 26, 2015·1 cites·20 claims
- 4264US5363683AForming machineSCHULER GMBH L·Filed 1993·Granted Nov 15, 1994·15 cites·1 claims
- 4363US6927101B2Field-effect-controllable semiconductor component and method for fabricating the componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 9, 2005·8 cites·24 claims
- 4463US5802967AArrangement for transferring workpieces through a succession of machining stationsSCHULER PRESSEN GMBH & CO·Filed 1996·Granted Sep 8, 1998·15 cites·6 claims
- 4562US7833862B2Semiconductor device and method for forming sameINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Nov 16, 2010·2 cites·12 claims
- 4661US5385040APress comprising a transfer device for sheet metal partsSCHULER GMBH L·Filed 1993·Granted Jan 31, 1995·15 cites·14 claims
- 4759US9431392B2Electronic circuit having adjustable transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Aug 30, 2016·1 cites·20 claims
- 4859US7767527B2Method for producing a vertical transistor componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 3, 2010·1 cites·22 claims
- 4959US4790960AProcess for the stripping of cesium ions from aqueous solutionsKERNFORSCHUNGSZ KARLSRUHE·Filed 1986·Granted Dec 13, 1988·13 cites·10 claims
- 5059US4170857AFacade constructionLEITL WERKE BAUHUETTE·Filed 1977·Granted Oct 16, 1979·22 cites·7 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →