Inventor · disambiguated record
Weiping Bai
Also filed as: BAI WEIPING
21 granted patents·8 pending applications·0 citations·filing 2021–2025
87Inventor score
Files withCHANGXIN MEMORY TECH INC27CHANGXIN MEMORY TECHNOKKOGIES INC1UNIV SCIENCE & TECHNOLOGY CHINA1
Top patents by PatentIndex Score
29 records- 0164US12225707B2Method for manufacturing semiconductor structure, semiconductor structure and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
- 0262US12513893B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 30, 2025·0 cites·18 claims
- 0362US12389589B2Semiconductor device and method for manufacturing semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 12, 2025·0 cites·19 claims
- 0460US12446213B2Method for forming semiconductor device and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 14, 2025·0 cites·11 claims
- 0559US12324141B2Memory and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 3, 2025·0 cites·15 claims
- 0658US12426251B2Semiconductor structure, method for manufacturing semiconductor structure, and memoryCHANGXIN MEMORY TECH INC·Filed 2023·Granted Sep 23, 2025·0 cites·17 claims
- 0758US12419041B2Method for forming storage node contact structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 16, 2025·0 cites·16 claims
- 0857US12396182B2Capacitor and manufacturing method thereof, and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 19, 2025·0 cites·6 claims
- 0957US12369297B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 22, 2025·0 cites·14 claims
- 1056US12446206B2Three-dimensional semiconductor structure and formation method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 14, 2025·0 cites·14 claims
- 1156US12309997B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 20, 2025·0 cites·12 claims
- 1255US12356605B2Memory device and manufacturing method thereforCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jul 8, 2025·0 cites·17 claims
- 1355US2022416049A1Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 1454US12342529B2Semiconductor structure and manufacturing method thereof and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·0 cites·15 claims
- 1554US2023016558A1Capacitor stack structure and method for forming sameCHANGXIN MEMORY TECHNOKKOGIES INC·Filed 2022·Application pending·0 cites
- 1653US12469697B2Preparation method for capacitor structure, capacitor structure, and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Nov 11, 2025·0 cites·17 claims
- 1753US12127415B2Manufacturing method for capacitor structure, capacitor structure and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 22, 2024·0 cites·14 claims
- 1853US2025275152A1Ferroelectric capacitor resisting fatigue, ferroelectric storage circuit, and ferroelectric memory thereofUNIV SCIENCE & TECHNOLOGY CHINA·Filed 2025·Application pending·0 cites
- 1952US12490420B2Semiconductor structure and manufacturing method therefor, and memoryCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 2, 2025·0 cites·13 claims
- 2052US12342523B2Method for manufacturing memory and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jun 24, 2025·0 cites·10 claims
- 2152US12336169B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 17, 2025·0 cites·11 claims
- 2252US11871562B2Method for forming storage node contact structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 9, 2024·0 cites·16 claims
- 2352US2023413523A1Semiconductor structure and method for forming semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 2450US12033799B2Capacitor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 9, 2024·0 cites·15 claims
- 2550US2023064521A1Semiconductor structure and method for forming semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2647US2022254874A1Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2746US12211889B2Electrode layer, capacitor and methods for electrode layer and capacitor manufactureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 28, 2025·0 cites·13 claims
- 2844US2022216140A1Integrated circuit capacitance device and method for manufacturing integrated circuit capacitance deviceCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 2942US2022181327A1Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →