Inventor · disambiguated record
Wei Min Chan
Also filed as: CHAN WEI · CHAN WEI MIN
82 granted patents·26 pending applications·295 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD78APPLIED MATERIALS INC7CHAN WEI MIN5TAIWAN SEMICONDUCTOR MFG5CHEN YEN-HUEI3
Top patents by PatentIndex Score
108 records- 0198US9208858B1Static random access memory with assist circuitTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 8, 2015·70 cites·20 claims
- 0296US11417370B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·4 cites·20 claims
- 0394US11790958B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·2 cites·20 claims
- 0494US9129707B2Dual port SRAM with dummy read recoveryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 8, 2015·20 cites·20 claims
- 0592US10411019B2SRAM cell word line structure with reduced RC effectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 10, 2019·6 cites·20 claims
- 0692US10153035B2SRAM-based authentication circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 11, 2018·9 cites·16 claims
- 0791US10503421B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·6 cites·20 claims
- 0890US11301148B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 12, 2022·2 cites·20 claims
- 0990US11100964B1Multi-stage bit line pre-chargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 24, 2021·3 cites·20 claims
- 1090US8391097B2Memory word-line driver having reduced power consumptionCHAN WEI MIN·Filed 2010·Granted Mar 5, 2013·16 cites·13 claims
- 1189US11043264B2Static random access memory methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·2 cites·20 claims
- 1289US8601411B2Pre-colored methodology of multiple patterningCHEN YEN-HUEI·Filed 2012·Granted Dec 3, 2013·11 cites·20 claims
- 1389US2025364022A1Multi-Stage Bit Line Pre-ChargeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1488US9171849B2Three dimensional dual-port bit cell and method of using sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·6 cites·19 claims
- 1588US9029230B2Conductive line routing for multi-patterning technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 12, 2015·8 cites·20 claims
- 1687US9704565B2Method of using a static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·5 cites·20 claims
- 1786US10439827B2SRAM-based authentication circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 8, 2019·4 cites·17 claims
- 1886US10176864B2Static random access memory circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·4 cites·20 claims
- 1986US9753895B2Method for process variation analysis of an integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·6 cites·19 claims
- 2086US9389511B2Methods of making patterned structures of materials, patterned structures of materials, and methods of using sameSCHWARTZ EVAN L·Filed 2012·Granted Jul 12, 2016·8 cites·14 claims
- 2185US9281056B2Static random access memory and method of using the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 8, 2016·5 cites·20 claims
- 2285US8559251B2Memory circuit and method of writing datum to memory circuitLIN CHIH-YU·Filed 2012·Granted Oct 15, 2013·11 cites·20 claims
- 2384US9075936B2Pre-colored methodology of multiple patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·6 cites·18 claims
- 2483US12300605B2Reducing internal node loading in combination circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2583US9093176B2Power line lowering for write assisted control schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Jul 28, 2015·8 cites·19 claims
- 2683US2025246544A1Reducing internal node loading in combination circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2782US11048840B2Method for eliminating false paths of a circuit unit to be implemented using a systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 29, 2021·2 cites·20 claims
- 2881US2025358999A1Integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2981US2025349353A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3081US2025182797A1Memory DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3180US10275561B2Method for eliminating false paths of a circuit unit to be implemented using a systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·2 cites·20 claims
- 3280US8723265B2Semiconductor structure with dummy polysilicon linesCHEN YEN-HUEI·Filed 2011·Granted May 13, 2014·5 cites·20 claims
- 3380US8477527B2SRAM timing cell apparatus and methodsWANG LI-WEN·Filed 2011·Granted Jul 2, 2013·8 cites·20 claims
- 3480US8406039B2Low-leakage power supply architecture for an SRAM arrayLEE CHENG HUNG·Filed 2010·Granted Mar 26, 2013·7 cites·14 claims
- 3579US10783954B2Semiconductor memory with respective power voltages for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·3 cites·20 claims
- 3679US10770134B2SRAM based authentication circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·3 cites·20 claims
- 3779US10685704B2Static random access memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·2 cites·20 claims
- 3879US2025359001A1Integrated circuit, system and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3979US2025355586A1Integrated circuit and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4078US12165731B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 4178US11854970B2Reducing internal node loading in combination circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4278US2025359042A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4377US12245412B2SRAM cell word line structure with reduced RC effectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 4477US10612135B2Method and system for high temperature cleanAPPLIED MATERIALS INC·Filed 2017·Granted Apr 7, 2020·2 cites·20 claims
- 4577US2025355587A1Integrated circuit, system and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4676US12512131B2Memory device, method, layout, and systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·20 claims
- 4776US10949100B2Configurable memory storage systemTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·2 cites·20 claims
- 4876US10083257B2Method, system and computer program product for generating simulation sampleTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 25, 2018·4 cites·20 claims
- 4976US8576655B2Semiconductor memoriesCHAN WEI MIN·Filed 2011·Granted Nov 5, 2013·6 cites·20 claims
- 5076US2025342864A1Integrated circuit device, memory cell and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 108 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →