Inventor · disambiguated record
Wei-Chuan Chen
Also filed as: CHEN WEI · CHEN WEI-CHUAN
71 granted patents·32 pending applications·1,052 citations·filing 1998–2025
99Inventor score
Top patents by PatentIndex Score
103 records- 0199US9548445B2Amorphous alloy space for perpendicular MTJsQUALCOMM INC·Filed 2015·Granted Jan 17, 2017·80 cites·12 claims
- 0299US9142762B1Magnetic tunnel junction and method for fabricating a magnetic tunnel junctionQUALCOMM INC·Filed 2014·Granted Sep 22, 2015·45 cites·10 claims
- 0398US10043967B2Self-compensation of stray field of perpendicular magnetic elementsQUALCOMM INC·Filed 2014·Granted Aug 7, 2018·36 cites·12 claims
- 0498US9935258B2Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching deviceQUALCOMM INC·Filed 2016·Granted Apr 3, 2018·36 cites·18 claims
- 0598US9343659B1Embedded magnetoresistive random access memory (MRAM) integration with top contactsQUALCOMM INC·Filed 2015·Granted May 17, 2016·49 cites·11 claims
- 0698US9245608B2Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching deviceCHEN WEI-CHUAN·Filed 2012·Granted Jan 26, 2016·82 cites·16 claims
- 0797US10060880B2Magnetoresistive (MR) sensors employing dual MR devices for differential MR sensingQUALCOMM INC·Filed 2016·Granted Aug 28, 2018·13 cites·23 claims
- 0897US9704919B1High aspect ratio vertical interconnect access (via) interconnections in magnetic random access memory (MRAM) bit cellsQUALCOMM INC·Filed 2016·Granted Jul 11, 2017·30 cites·20 claims
- 0997US8981502B2Fabricating a magnetic tunnel junction storage elementCHEN WEI-CHUAN·Filed 2010·Granted Mar 17, 2015·23 cites·14 claims
- 1097US8704320B2Strain induced reduction of switching current in spin-transfer torque switching devicesZHU XIAOCHUN·Filed 2012·Granted Apr 22, 2014·37 cites·14 claims
- 1197USD696668SInput deviceASUSTEK COMP INC·Filed 2013·Granted Dec 31, 2013·184 cites·1 claims
- 1296US10210920B1Magnetic tunnel junction (MTJ) devices with varied breakdown voltages in different memory arrays fabricated in a same semiconductor die to facilitate different memory applicationsQUALCOMM INC·Filed 2018·Granted Feb 19, 2019·25 cites·31 claims
- 1396US9614143B2De-integrated trench formation for advanced MRAM integrationQUALCOMM INC·Filed 2015·Granted Apr 4, 2017·17 cites·10 claims
- 1496US9269893B2Replacement conductive hard mask for multi-step magnetic tunnel junction (MTJ) etchQUALCOMM INC·Filed 2014·Granted Feb 23, 2016·22 cites·13 claims
- 1596US8362580B2Spin-transfer switching magnetic element utilizing a composite free layer comprising a superparamagnetic layerQUALCOMM INC·Filed 2009·Granted Jan 29, 2013·45 cites·52 claims
- 1693US8796046B2Methods of integrated shielding into MTJ device for MRAMQUALCOMM INC·Filed 2013·Granted Aug 5, 2014·14 cites·22 claims
- 1792US9461094B2Switching film structure for magnetic random access memory (MRAM) cellQUALCOMM INC·Filed 2014·Granted Oct 4, 2016·14 cites·18 claims
- 1892US9214624B2Amorphous spacerlattice spacer for perpendicular MTJsQUALCOMM INC·Filed 2013·Granted Dec 15, 2015·14 cites·10 claims
- 1992US8557610B2Methods of integrated shielding into MTJ device for MRAMCHEN WEI-CHUAN·Filed 2011·Granted Oct 15, 2013·13 cites·30 claims
- 2090US10460817B2Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectorsQUALCOMM INC·Filed 2017·Granted Oct 29, 2019·10 cites·30 claims
- 2190US8923044B2MTP MTJ deviceLI XIA·Filed 2012·Granted Dec 30, 2014·13 cites·31 claims
- 2290US7583529B2Magnetic tunnel junction devices and magnetic random access memoryIND TECH RES INST·Filed 2007·Granted Sep 1, 2009·24 cites·19 claims
- 2389US10249814B1Dynamic memory protectionQUALCOMM INC·Filed 2018·Granted Apr 2, 2019·8 cites·20 claims
- 2488US8564080B2Magnetic storage element utilizing improved pinned layer stackCHEN WEI-CHUAN·Filed 2010·Granted Oct 22, 2013·9 cites·35 claims
- 2587US9609620B1Wireless access point tile download prioritizationQUALCOMM INC·Filed 2015·Granted Mar 28, 2017·8 cites·15 claims
- 2683US10582609B2Integration of through glass via (TGV) filter and acoustic filterQUALCOMM INC·Filed 2017·Granted Mar 3, 2020·4 cites·19 claims
- 2782US10608174B2Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell densityQUALCOMM INC·Filed 2019·Granted Mar 31, 2020·4 cites·11 claims
- 2881US9267989B2Integrated circuit testing with power collapsedQUALCOMM INC·Filed 2014·Granted Feb 23, 2016·4 cites·18 claims
- 2981US7606063B2Magnetic memory deviceIND TECH RES INST·Filed 2007·Granted Oct 20, 2009·16 cites·6 claims
- 3080US9349939B2Etch-resistant protective coating for a magnetic tunnel junction deviceQUALCOMM INC·Filed 2014·Granted May 24, 2016·3 cites·29 claims
- 3179US9709660B1Crowdsourced user density applicationsQUALCOMM INC·Filed 2016·Granted Jul 18, 2017·3 cites·22 claims
- 3279US9666792B2Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elementsQUALCOMM INC·Filed 2015·Granted May 30, 2017·3 cites·29 claims
- 3379US2025370892A1System and method for testing memory deviceNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 3477US8513749B2Composite hardmask architecture and method of creating non-uniform current path for spin torque driven magnetic tunnel junctionCHEN WEI-CHUAN·Filed 2010·Granted Aug 20, 2013·6 cites·35 claims
- 3577US8026562B2Magnetic memory element utilizing spin transfer switchingIND TECH RES INST·Filed 2010·Granted Sep 27, 2011·5 cites·12 claims
- 3676US9070870B2Method of fabricating a magnetic tunnel junction (MTJ) device with reduced switching currentQUALCOMM INC·Filed 2014·Granted Jun 30, 2015·2 cites·20 claims
- 3775US11525318B2Motor bypass valveSCHLUMBERGER TECHNOLOGY CORP·Filed 2020·Granted Dec 13, 2022·1 cites·18 claims
- 3873US8134357B2Multi-electrode measuring systemCHOU JUNG-CHUAN·Filed 2010·Granted Mar 13, 2012·2 cites·43 claims
- 3972US10869725B2Simulated method and system for navigating surgical instrument based on tomographyUNIV CHINA MEDICAL·Filed 2017·Granted Dec 22, 2020·2 cites·2 claims
- 4072US10431278B2Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperatureQUALCOMM INC·Filed 2017·Granted Oct 1, 2019·3 cites·25 claims
- 4172US6405994B1Flow control valve incorporating an inflatable bagTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·16 cites·20 claims
- 4271US10811068B2Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applicationsQUALCOMM INC·Filed 2019·Granted Oct 20, 2020·2 cites·15 claims
- 4370US10446743B2Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell densityQUALCOMM INC·Filed 2018·Granted Oct 15, 2019·2 cites·21 claims
- 4469US8713388B2Integrated circuit testing with power collapsedCHEN WEI·Filed 2011·Granted Apr 29, 2014·2 cites·37 claims
- 4569US7208808B2Magnetic random access memory with lower switching fieldIND TECH RES INST·Filed 2005·Granted Apr 24, 2007·4 cites·6 claims
- 4668US11456411B2Method for fabricating magnetic tunneling junction element with a composite capping layerHEFECHIP CORPORATION LTD·Filed 2019·Granted Sep 27, 2022·2 cites·6 claims
- 4767US10693432B2Solenoid structure with conductive pillar technologyQUALCOMM INC·Filed 2018·Granted Jun 23, 2020·1 cites·20 claims
- 4867US7829964B2Magnetic memory element utilizing spin transfer switchingIND TECH RES INST·Filed 2009·Granted Nov 9, 2010·5 cites·27 claims
- 4963US12417157B2System and method for testing memory deviceNANYA TECHNOLOGY CORP·Filed 2023·Granted Sep 16, 2025·0 cites·8 claims
- 5063US2018372685A1Magnetoresistive (mr) sensors employing dual mr devices for differential mr sensingQUALCOMM INC·Filed 2018·Application pending·0 cites
Showing the top 50 of 103 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →