Inventor · disambiguated record
Weihua Cheng
Also filed as: CHENG WEIHUA
28 granted patents·12 pending applications·91 citations·filing 2015–2025
95Inventor score
Top patents by PatentIndex Score
40 records- 0198US11562985B2Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 24, 2023·12 cites·20 claims
- 0297US11758732B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
- 0397US11527547B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Dec 13, 2022·3 cites·20 claims
- 0497US10923491B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 16, 2021·4 cites·20 claims
- 0597US10593690B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Mar 17, 2020·21 cites·20 claims
- 0696US11749641B2Unified semiconductor devices having processor and heterogeneous memories and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Sep 5, 2023·3 cites·20 claims
- 0794US11158604B2Unified semiconductor devices having processor and heterogeneous memories and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 26, 2021·8 cites·20 claims
- 0893US11430766B2Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 30, 2022·6 cites·19 claims
- 0993US2025364498A1Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1092US11024600B2Unified semiconductor devices having programmable logic device and heterogeneous memories and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 1, 2021·8 cites·20 claims
- 1188US11302706B2Bonded unified semiconductor chips and fabrication and operation methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Apr 12, 2022·4 cites·20 claims
- 1288US2025024683A1Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1386US11721668B2Bonded semiconductor devices having programmable logic device and dynamic random-access memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Aug 8, 2023·3 cites·20 claims
- 1486US11302700B2Bonded semiconductor devices having programmable logic device and NAND flash memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Apr 12, 2022·4 cites·20 claims
- 1586US2025349792A1Method of forming semiconductor structureYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1684US12137568B2Hybrid bonding contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
- 1784US11864367B2Bonded semiconductor devices having processor and NAND flash memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·19 claims
- 1884US10790297B2Method for forming channel hole in three-dimensional memory device using nonconformal sacrificial layerYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Sep 29, 2020·4 cites·20 claims
- 1981US10811380B2Semiconductor structure and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 20, 2020·3 cites·16 claims
- 2080US12002788B2Bonded semiconductor devices having processor and dynamic random-access memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·19 claims
- 2178US10818631B2Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 27, 2020·3 cites·16 claims
- 2272US11367729B2Bonded semiconductor devices having processor and NAND flash memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Jun 21, 2022·1 cites·16 claims
- 2371US12451462B2Unified semiconductor devices having processor and heterogeneous memories and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·15 claims
- 2471US12394751B2Method of forming semiconductor structureYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 19, 2025·0 cites·19 claims
- 2570US11631688B2Bonded unified semiconductor chips and fabrication and operation methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 2669US2022216178A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 2768US2023005873A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 2865US11694993B2Unified semiconductor devices having processor and heterogeneous memories and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·18 claims
- 2964US11996389B2Bonded semiconductor devices having programmable logic device and dynamic random-access memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 3064US2021398932A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
- 3158US2021335745A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Application pending·0 cites
- 3256US2020006285A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 3356US2024172415A1Vertical transistors and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 3453US11711913B2Bonded semiconductor devices having programmable logic device and NAND flash memory and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 3553US2020006275A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 3652US12089405B2Three-dimensional memory devices with channel structures having plum blossom shapeYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Sep 10, 2024·0 cites·20 claims
- 3752US2020006284A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 3848US11877449B2Methods for forming three-dimensional memory devices with channel structures having plum blossom shapeYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 16, 2024·0 cites·20 claims
- 3944US2020350286A1Bonded memory devices having flash memory controller and fabrication and operation methods thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 4034US9589937B2Semiconductor cooling method and method of heat dissipationWUHAN XINXIN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 7, 2017·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →