Semiconductor structure and method of forming the same

Abstract

The present disclosure relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer located on a surface of the first substrate. The material of the first bonding layer is a dielectric material containing element carbon (C). C atomic concentration of a surface layer of the first bonding layer away from the first substrate is higher than or equal to 35%. The first bonding layer of the semiconductor structure may be used to enhance bonding strength during bonding.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a first bonding layer comprising a surface layer, the surface layer being configured to be in direct contact with a second bonding layer to bond the first bonding layer with the second bonding layer,   wherein:
 a material of the first bonding layer comprises element silicon, nitrogen, carbon, and oxygen; and 
 carbon atomic concentration of the surface layer is higher than or equal to 35%. 
   
     
     
         2 . The semiconductor structure of  claim 1 , wherein a bonding surface of the first bonding layer comprises a maximal value of the carbon atomic concentration, the bonding surface of the first bonding layer being configured to contact the second bonding layer. 
     
     
         3 . The semiconductor structure of  claim 1 , wherein:
 the element carbon in the first bonding layer is in a form of methyl groups (—CH3).   
     
     
         4 . The semiconductor structure of  claim 1 , wherein:
 the first bonding layer is formed above a first substrate; and   carbon atomic concentration of the first bonding layer increases gradually along a direction from the first substrate to a bonding surface of the first bonding layer, the bonding surface being configured to contact the second bonding layer.   
     
     
         5 . The semiconductor structure of  claim 1 , wherein a thickness of the surface layer ranges from 10 Å to 50 Å. 
     
     
         6 . The semiconductor structure of  claim 5 , wherein a thickness of the first bonding layer is larger than 100 Å. 
     
     
         7 . The semiconductor structure of  claim 1 , wherein the carbon atomic concentration of the surface layer is higher than or equal to 40% within a thickness of the surface layer equal to 30 Å. 
     
     
         8 . The semiconductor structure of  claim 1 , wherein the material of the first bonding layer comprises one of carbon-doped silicon nitride, carbon-doped silicon oxynitride, or nitrogen-doped silicon oxycarbide. 
     
     
         9 . The semiconductor structure of  claim 1 , wherein:
 the first bonding layer is formed above a first substrate; and   a density of the first bonding layer changes gradually along a direction from a bonding surface to the first substrate, the bonding surface being configured to contact the second bonding layer.   
     
     
         10 . The semiconductor structure of  claim 9 , wherein the density of the first bonding layer comprises one of:
 gradually increasing along the direction;   gradually decreasing along the direction; or   increasing first and then decreasing along the direction.   
     
     
         11 . The semiconductor structure of  claim 1 , further comprises:
 a device layer formed on a first substrate and disposed between the first bonding layer and the first substrate; and   a composition of the first bonding layer approaches a composition of the device layer near an interface between the first bonding layer and the device layer.   
     
     
         12 . The semiconductor structure of  claim 1 , wherein:
 the first bonding layer comprises a plurality of sub bonding layers stacked with one another; and   the plurality of sub bonding layers comprise different compositions.   
     
     
         13 . The semiconductor structure of  claim 1 , wherein:
 the first bonding layer is doped with at least one element of silicon, nitrogen, oxygen, hydrogen, phosphorus, or fluorine.   
     
     
         14 . The semiconductor structure of  claim 1 , wherein:
 the surface layer of the first bonding layer is a first surface layer; and   the semiconductor structure further comprises:
 the second bonding layer comprising a second surface layer, the second surface layer being configured to be in direct contact with the first surface layer of the first bonding layer to bond the second bonding layer with the first bonding layer, 
 wherein:
 a material of the second bonding layer comprises element silicon, nitrogen, carbon, and oxygen; and 
 carbon atomic concentration of the second surface layer is higher than or equal to 35%. 
 
   
     
     
         15 . The semiconductor structure of  claim 14 , wherein
 a bonding surface of the second bonding layer comprises a maximal value of the carbon atomic concentration, the bonding surface of the second bonding layer being configured to contact the first bonding layer.   
     
     
         16 . The semiconductor structure of  claim 14 , wherein:
 the second bonding layer is formed above a second substrate; and   carbon atomic concentration in the second bonding layer increases gradually along a direction from the second substrate to a bonding surface of the second bonding layer attached to the first bonding layer, the bonding surface of the second bonding layer comprising a maximal value of the carbon atomic concentration.   
     
     
         17 . The semiconductor structure of  claim 14 , wherein:
 the material of the second bonding layer is identical to the material of the first bonding layer.   
     
     
         18 . The semiconductor structure of  claim 14 , wherein:
 the second bonding layer is formed on one side of a second substrate; and   a third bonding layer is further formed on another side of the second substrate and configured to bond with a fourth bonding layer.   
     
     
         19 . The semiconductor structure of  claim 14 , further comprising:
 a first bonding pad penetrating the first bonding layer; and   a second bonding pad penetrating the second bonding layer and corresponding to the first bonding pad, the first bonding pad being bonded with the second bonding pad.   
     
     
         20 . A semiconductor structure, comprising:
 a first bonding layer comprising a surface layer, the surface layer being configured to be in direct contact with a second bonding layer to bond the first bonding layer with the second bonding layer,   wherein:
 a material of the first bonding layer comprises element silicon, nitrogen, carbon, and oxygen; 
 carbon atomic concentration of the surface layer is higher than or equal to 35%, a bonding surface of the first bonding layer comprising a maximal value of the carbon atomic concentration, the bonding surface being configured to contact the second bonding layer; and 
 the first bonding layer comprises the element carbon in CH3 bonds.