Inventor · disambiguated record
Xianjin Wan
Also filed as: WAN XIANJIN
13 granted patents·8 pending applications·56 citations·filing 2018–2025
90Inventor score
Files withYANGTZE MEMORY TECH CO LTD21
Top patents by PatentIndex Score
21 records- 0198US11785776B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Oct 10, 2023·6 cites·20 claims
- 0298US10553604B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Feb 4, 2020·31 cites·20 claims
- 0393US11956953B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
- 0492US10910397B2Through array contact structure of three- dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Feb 2, 2021·5 cites·20 claims
- 0587US2025311214A1Semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0687US2024407172A1Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 0786US11545505B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Jan 3, 2023·1 cites·20 claims
- 0886US2025349792A1Method of forming semiconductor structureYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0984US12185550B2Through array contact structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 1084US11177231B2Bonding contacts having capping layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Nov 16, 2021·4 cites·17 claims
- 1183US2024188291A1Semiconductor devicesYANGTZE MEMORY TECH CO LTD·Filed 2024·Application pending·0 cites
- 1282US10886291B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
- 1381US10811380B2Semiconductor structure and forming method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 20, 2020·3 cites·16 claims
- 1478US10818631B2Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Granted Oct 27, 2020·3 cites·16 claims
- 1573US11482532B2Joint opening structures of three-dimensional memory devices and methods for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
- 1671US12394751B2Method of forming semiconductor structureYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Aug 19, 2025·0 cites·19 claims
- 1770US2023317665A1Bonding contacts having capping layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2023·Application pending·0 cites
- 1869US2022216178A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2022·Application pending·0 cites
- 1966US11715718B2Bonding contacts having capping layer and method for forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Aug 1, 2023·0 cites·20 claims
- 2056US2020006285A1Semiconductor structure and method of forming the sameYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
- 2153US2020208264A1Semiconductor processing apparatus and control method thereofYANGTZE MEMORY TECH CO LTD·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →