Inventor · disambiguated record
Wei-Chen Chu
Also filed as: CHU WEI-CHEN
35 granted patents·15 pending applications·95 citations·filing 2016–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD50
Top patents by PatentIndex Score
50 records- 0197US11729969B1Semiconductor device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·5 cites·20 claims
- 0297US10269715B2Split rail structures located in adjacent metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·29 cites·20 claims
- 0397US10020261B2Split rail structures located in adjacent metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 10, 2018·31 cites·20 claims
- 0491US11183422B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·2 cites·20 claims
- 0589US11088020B2Structure and formation method of interconnection structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 10, 2021·7 cites·20 claims
- 0689US10991618B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·4 cites·20 claims
- 0786US10340181B2Interconnect structure including air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 2, 2019·4 cites·20 claims
- 0885US11764106B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 0984US10957580B2Metal routing with flexible space formed using self-aligned spacer patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 23, 2021·1 cites·20 claims
- 1082US10529617B2Metal routing with flexible space formed using self-aligned spacer patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·2 cites·20 claims
- 1181US12230534B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1280US10534273B2Multi-metal fill with self-aligned patterning and dielectric with voidsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·2 cites·20 claims
- 1380US2024085803A1Multi-metal fill with self-aligned patterning and dielectric with voidsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1479US10714421B2Structure and formation method of semiconductor device with self-aligned conductive featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 14, 2020·2 cites·20 claims
- 1579US10026647B2Multi-metal fill with self-align patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 17, 2018·2 cites·20 claims
- 1679US2025364402A1Interconnection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1778US11860550B2Multi-metal fill with self-aligned patterning and dielectric with voidsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1877US10734275B2Metal routing with flexible space formed using self-aligned spacer patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·1 cites·20 claims
- 1977US2025079298A1Hybrid metal line structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2076US12300600B2Semiconductor device with self-aligned conductive featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2176US12183671B2Hybrid metal line structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 2276US12058852B2Semiconductor device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 2376US2025336807A1Metal lines of hybrid heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2474US2024379537A1Semiconductor structure having deep metal line and method for forming the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2572US12002709B2Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 2671US10818596B2Method for forming semiconductor device structure with graphene layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·1 cites·20 claims
- 2771US10276396B2Method for forming semiconductor device with damascene structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·20 claims
- 2869US11404367B2Method for forming semiconductor device with self-aligned conductive featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 2969US11107725B2Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·19 claims
- 3069US2025079295A1Interconnection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3168US12094816B2Semiconductor structure having deep metal line and method for forming the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 3267US11682618B2Hybrid metal line structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 3365US11422475B2Multi-metal fill with self-aligned patterning and dielectric with voidsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 23, 2022·0 cites·20 claims
- 3462US10784155B2Multi-metal fill with self-align patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 3562US10784151B2Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·0 cites·20 claims
- 3662US10522469B2Split rail structures located in adjacent metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 3761US10804143B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 3861US2025300067A1Integrated circuit chip having via towers for power connection and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3960US2025273511A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4058US10483159B2Multi-metal fill with self-align patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
- 4158US2025174492A1Interconnection structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4258US2025112088A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4358US2025149437A1Interconnection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4457US2025125148A1Method for two-dimensional mental line patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4557US2025118598A1Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4654US2025140683A1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4753US2025054811A1Semiconductor structure including lines of different heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4848US10074607B2Semiconductor device structure with graphene layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 11, 2018·0 cites·17 claims
- 4942US10163690B22-D interconnections for integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·0 cites·17 claims
- 5040US10535560B2Interconnection structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →