Inventor · disambiguated record
Wenqing Fang
Also filed as: FANG WENQING
14 granted patents·3 pending applications·53 citations·filing 2006–2012
89Inventor score
Top patents by PatentIndex Score
17 records- 0188US7758695B2Method for fabricating metal substrates with high-quality surfacesLATTICE POWER JIANGXI CORP·Filed 2007·Granted Jul 20, 2010·11 cites·28 claims
- 0284US7615420B2Method for manufacturing indium gallium aluminium nitride thin film on silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Nov 10, 2009·10 cites·19 claims
- 0382US8361880B2Semiconductor light-emitting device with metal support substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Jan 29, 2013·11 cites·11 claims
- 0477US7692205B2Semiconductor light-emitting deviceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 6, 2010·8 cites·6 claims
- 0570US8383438B2Method for fabricating InGaAIN light-emitting diodes with a metal substrateLATTICE POWER JIANGXI CORP·Filed 2008·Granted Feb 26, 2013·4 cites·16 claims
- 0668US7705348B2Semiconductor light-emitting device with electrode for N-polar InGaAIN surfaceLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 27, 2010·3 cites·9 claims
- 0765US7888779B2Method of fabrication InGaAIN film and light-emitting device on a silicon substrateLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 15, 2011·3 cites·24 claims
- 0864US7919784B2Semiconductor light-emitting device and method for making sameLATTICE POWER JIANGXI CORP·Filed 2006·Granted Apr 5, 2011·2 cites·11 claims
- 0959US8053757B2Gallium nitride light-emitting device with ultra-high reverse breakdown voltageLATTICE POWER JIANGXI CORP·Filed 2007·Granted Nov 8, 2011·1 cites·27 claims
- 1051US2011133158A1Method for fabricating ingan-based multi-quantum well layersLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 1146US8461029B2Method for fabricating InGaN-based multi-quantum well layersJIANG FENGYI·Filed 2012·Granted Jun 11, 2013·0 cites·11 claims
- 1245US2011253972A1LIGHT-EMITTING DEVICE BASED ON STRAIN-ADJUSTABLE InGaAIN FILMLATTICE POWER JIANGXI CORP·Filed 2008·Application pending·0 cites
- 1340US8431936B2Method for fabricating a p-type semiconductor structureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·12 claims
- 1440US8431475B2Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperatureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·18 claims
- 1540US7902556B2Method for fabricating high-quality semiconductor light-emitting devices on silicon substratesLATTICE POWER JIANGXI CORP·Filed 2006·Granted Mar 8, 2011·0 cites·7 claims
- 1640US2011298005A1Method for fabricating an n-type semiconductor material using silane as a precursorJIANG FENGYI·Filed 2007·Application pending·0 cites
- 1739US8384100B2InGaAIN light-emitting device and manufacturing method thereofLATTICE POWER JIANGXI CORP·Filed 2006·Granted Feb 26, 2013·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →