Inventor · disambiguated record

Wen-Ting Lan

Also filed as: LAN WEN-TING

27 granted patents·23 pending applications·63 citations·filing 2014–2025

95Inventor score

Technology areasH10D H10W H10P B82Y

Files withTAIWAN SEMICONDUCTOR MFG CO LTD50

Top patents by PatentIndex Score

50 records

0199US11289606B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·15 cites·20 claims
0298US11961915B2Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·4 cites·20 claims
0398US11444170B1Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 13, 2022·5 cites·20 claims
0498US11264327B2Backside power rail structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·10 cites·20 claims
0597US11387181B2Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·3 cites·20 claims
0697US10833003B1Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·14 cites·20 claims
0796US11916125B2Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
0896US11842965B2Backside power rail structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·20 claims
0992US11742280B2Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 29, 2023·1 cites·20 claims
1086US12402405B2Integration of multiple fin stuctures on a single substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
1186US12317542B2Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
1286US2024363522A1Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1385US10157751B1Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·3 cites·20 claims
1485US2025301777A1Integration of multiple fin stuctures on a single substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1585US2025287646A1Semiconductor device with backside self-aligned power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1683US12057385B2Integrated circuits with backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
1783US2025311386A1Improved Nanosheet ThicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1882US12183678B2Backside power rail structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
1980US12040329B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
2080US9755033B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 5, 2017·3 cites·20 claims
2180US2025359176A1Field effect transistor with isolated source/drains and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2280US2025364437A1Protection layer for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2379US2025359163A1Device having hybrid nanosheet structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2479US2024371934A1Semiconductor structure with hybrid nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2579US2025357419A1Trim free wafer bonding methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2678US2024258432A1Capacitance reduction for back-side power rail deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2778US2025351478A1Hybrid nanostructure scheme and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2878US2024339455A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2977US12396246B2Semiconductor integrated circuit including gate-all-around FETs with nanosheet channels and Fin-like FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
3076US11973079B2Integration of multiple fin structures on a single substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
3176US11257903B2Method for manufacturing semiconductor structure with hybrid nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·1 cites·20 claims
3273US12057477B2Semiconductor structure with hybrid nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
3371US12062705B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 13, 2024·0 cites·20 claims
3471US11664378B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
3570US11342325B2Integration of multiple fin structures on a single substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
3670US11302580B2Nanosheet thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·0 cites·20 claims
3770US2025098219A1Field effect transistor with isolated source/drains and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3869US12482785B2Trim free wafer bonding methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
3969US2025098237A1Hybrid nanostructure scheme and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4068US2023402405A1Protection layer for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4161US2025386549A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4259US10755943B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
4358US10854723B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 1, 2020·0 cites·14 claims
4458US2025344471A1Integrated circuit with nanostructure transistors and flexible bottom source/drain epitaxy for device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4557US2025132217A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4657US2025254912A1Semiconductor device with dielectric on epitaxy sidewallTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4756US2025212479A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4855US2025072067A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4954US2024006479A1Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
5054US2024021708A1Structure and formation method of semiconductor device with power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →